概述
数据手册STC11K28Q27VI 概述
Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO
STC11K28Q27VI 数据手册
通过下载STC11K28Q27VI数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO
STC11K Series
1.6mm x 1.2mm
Features
• ±±.5ppm (Frequency Stability) Available
• Clipped Sinewave
• (VC)TCXO
• Tape and Reel
Applications
• GPS
• Mobile Communication Equipment
• Cellular And Cordless Phones
• IP Networking
Part Numbering Guide
STC 11 K 30 R 48 V E - 26.000M
SUNTSU TCXO
FREQUENCY
MHz
PULLABILITY
1.6mm x 1.2mm
BLANK : TCXO
H : ±16.±±ppm
I : ±7.±ppm
CLIPPED SINEWAVE
TCXO/VCTCXO
BLANK : TCXO
OPERATING
SUPPLY VOLTAGE
V : VCTCXO
TEMPERATURE RANGE
18 : 1.8V±5%
25 : 2.5V±5%
27 : 2.7V±5%
28 : 2.8V±5%
FREQUENCY STABILITY
±7 : ±°C - +7±°C
P : ±2.±ppm
16 : -1±°C - +6±°C
17 : -1±°C - +7±°C
27 : -2±°C - +7±°C
38 : -3±°C - +85°C
Q : ±1.5ppm
R : ±1.±ppm
F : ±±.5ppm
3± : 3.±V±5%
33 : 3.3V±5%
COMPLIANT
Cage Code: 4GUT4
To customize your parameters contact a Suntsu representative.
Electrical Parameters
Units
Minimum
Typical
Maximum
Remarks
Frequency Range
MHz
26
52
Frequency Tolerance at +25ºC
Freq. Stability vs. Op Temp.
Freq. Stability vs. Supply Voltage
Freq. Stability vs. Load
ppm
ppm
ppm
ppm
-2.±
-±.5
-±.2
-±.2
+2.±
+±.5
+±.2
+±.2
After 2 times reflow
See part numbering guide for options
±5% change
±1±% change
Freq. Stability vs. Aging
Operating Temperature
Storage Temperature
Supply Voltage (VDD)
Current (IDD)
ppm
°C
-1.±
-3±
-4±
1.8
+1.±
+85
1 Year
See part numbering guide for options.
°C
+85
V
3.3
See part numbering guide for options.
mA
V
2
Control Voltage (VC, VCTCXO)
Pullability (VCTCXO)
±.1*VDD
±7.±
±.9* VDD
±16.±
Center Voltage: VDD*5±%.
ppm
See part numbering guide for options.
Linearity (VCTCXO)
%
-1±
+1±
Output Load (Clipped Sinewave)
Output Logic Levels
kΩ//pF
VP-P
1±//1±
±.8
4±
Symmetry (Duty Cycle)
%
5±
6±
ms
5.±
Start-Up Time
VC Input Impedance (VCTCXO)
Phase Noise (Typical) 1Hz Offset
Phase Noise (Typical) 1±Hz Offset
Phase Noise (Typical) 1±±Hz Offset
Phase Noise (Typical) 1KHz Offset
Phase Noise (Typical) 1±KHz Offset
kΩ
5±±
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
-57
-95
-12±
-14±
-155
Suntsu Electronics, Inc.
142 TECHNOLOGY DR., SUITE 150
IRVINE, CA 92618
www.suntsu.com
Specifications are subject
to change without notice.
Call: +1-949-783-7300 | Fax: +1-949-783-7301
Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO
STC11K Series
1.6mm x 1.2mm
Outline Drawing and Land Pattern
All dimensions are in millimeters (mm) unless otherwise noted. Drawings are not to scale.
0.65
0.30
0.65
1.20±0.15
0.60 Max
0.45 0.30 0.45
4
3
1
2
Test Circuit (Clipped Sinewave)
Waveform (Clipped Sinewave)
Typical Phase Noise
Suntsu Electronics, Inc.
142 TECHNOLOGY DR., SUITE 150
IRVINE, CA 92618
www.suntsu.com
Specifications are subject
to change without notice.
Call: +1-949-783-7300 | Fax: +1-949-783-7301
Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO
STC11K Series
1.6mm x 1.2mm
Tape And Reel Dimensions
All dimensions are in millimeters (mm) unless otherwise noted. Drawings are not to scale.
3,±±±pcs/Reel
8
4.0
Ø1.55
0.8
4.0
11.5
Ø13
2.5
Reflow Profile & Part Marking
Tp (Time At 260°C. 20-40 Sec)
260
Rup (Ramp Up, 3°C/Sec Max)
217
200
TI (Time Above 217°C.
60-150Sec)
150
Rdn (Ramp Down,
6°C/Sec Max)
Ts (Preheat Time.
60-180Sec)
T 25°C to Peak (480Sec Max)
Time (sec)
Environmental Specifications
Mechanical Specifications
Temperature Cycling
MIL-STD-883, Method 1±1±, Condition B
MIL-STD-883, Method 1±14, Condition A
MIL-STD-883, Method 1±14, Condition C
Mechanical Shock
MIL-STD-2±2, Method 213, Condition B
MIL-STD-883, Method 2±±7, Condition A
MIL-STD-883, Method 1±±4
Fine Leak Test
Vibration
Gross Leak Test
Moisture Resistance
Solderability
MIL-STD-883, Method 2±±3
J-STD-±2±, MSL 1
Resistance to Solvents
MIL-STD-2±2, Method 215
Moisture Sensitivity
Resistance to Soldering Heat
MIL-STD-2±2, Method 21±, Condition K
Suntsu Electronics, Inc.
142 TECHNOLOGY DR., SUITE 150
IRVINE, CA 92618
www.suntsu.com
Specifications are subject
to change without notice.
Call: +1-949-783-7300 | Fax: +1-949-783-7301
STC11K28Q27VI 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| STC11K28Q38 | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28Q38H | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28Q38I | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28Q38V | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28Q38VH | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28Q38VI | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28R07 | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28R07H | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28R07I | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
| STC11K28R07V | SUNTSU | Ceramic SMD 4 Pad Clipped Sinewave (VC)TCXO | 获取价格 |
|
STC11K28Q27VI 相关文章
强制中企出售股权，英国半导体领域渐成中企投资禁区
- 2024-11-08
- 22
台积电拟对大陆AI公司禁运7nm及以下工艺，引发业界关注
- 2024-11-08
- 15
锐成芯微推出基于8nm工艺的PVT Sensor IP，引领芯片技术创新
- 2024-11-08
- 16
苹果与富士康接洽，商讨在中国台湾生产AI服务器
- 2024-11-08
- 14
