LP0701_13 [SUPERTEX]

P-Channel Enhancement-Mode Lateral MOSFET;
LP0701_13
型号: LP0701_13
厂家: Supertex, Inc    Supertex, Inc
描述:

P-Channel Enhancement-Mode Lateral MOSFET

文件: 总6页 (文件大小:769K)
中文:  中文翻译
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Supertex inc.  
LP0701  
P-Channel Enhancement-Mode  
Lateral MOSFET  
Features  
General Description  
Ultra-low threshold  
These enhancement-mode (normally-off) transistors utilize  
a lateral MOS structure and Supertex’s well-proven silicon-  
gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar  
transistors and with the high input impedance and negative  
temperature coefficient inherent in MOS devices.  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on-resistance  
Freedom from secondary breakdown  
Low input and output leakage  
Characteristic of all MOS structures, these devices are free  
from thermal runaway and thermally induced secondary  
breakdown. The low threshold voltage and low on-resistance  
characteristics are ideally suited for hand held, battery  
operated applications.  
Applications  
Logic level interfaces  
Solid state relays  
Battery operated systems  
Photo voltaic drives  
Analog switches  
General purpose line drivers  
Ordering Information  
Product Summary  
Part Number  
Package Options  
8-Lead SOIC  
TO-92  
Packing  
BVDSS/BVDGS  
RDS(ON)  
VGS(TH)  
ID(ON)  
LP0701LG-G  
2500/Reel  
1000/Bag  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
-16.5V  
3.0kΩ  
-1.0V (max) 3.0mA (min)  
LP0701N3-G  
LP0701N3-G P002  
LP0701N3-G P003  
LP0701N3-G P005  
LP0701N3-G P013  
LP0701N3-G P014  
TO-92  
Pin Configuration  
TO-92  
D
D
D
D
TO-92  
TO-92  
DRAIN  
SOURCE  
G
TO-92  
S
NC  
NC  
-G denotes a lead (Pb)-free / RoHS compliant package  
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014  
TO-92 Taping Specifications and Winding Styles  
GATE  
8-Lead SOIC  
TO-92  
Product Marking  
Absolute Maximum Ratings  
Parameter  
YY = Year Sealed  
WW = Week Sealed  
L = Lot Number  
= “Green” Packaging  
YYWW  
Value  
BVDSS  
P0701  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage temperature  
LLLL  
BVDGS  
Package may or may not include the following marks: Si or  
8-Lead SOIC  
±10V  
-55°C to +150°C  
SiLP  
0 7 0 1  
YYWW  
YY = Year Sealed  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
WW = Week Sealed  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-92  
Doc.# DSFP-LP0701  
B071513  
Supertex inc.  
www.supertex.com  
LP0701  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
θja  
(OC/W)  
IDR  
(mA)  
IDRM  
(A)  
(continuous)†  
(mA)  
(pulsed)†  
(A)  
@TC = 25OC  
(W)  
Package  
8-Lead SOIC  
TO-92  
-700  
-500  
-1.25  
-1.25  
1.5‡  
1.0  
101‡  
132  
-700  
-500  
-1.25  
-1.25  
Notes:  
ID (continuous) is limited by max rated Tj.  
Mounted on FR4 board, 25mm x 25mm x 1.57mm  
Electrical Characteristics (TA = 25°C unless otherwise specified)  
Sym  
BVDSS  
VGS  
Parameter  
Min  
Typ  
Max  
-
Units  
V
Conditions  
Drain-to-source breakdown voltage  
Gate threshold voltage  
-16.5  
-
VGS = 0V, ID = -1.0mA  
VGS = VDS, ID = -1.0mA  
-0.5  
-0.7  
-1.0  
-4.0  
-100  
-100  
V
ΔVGS(th) Change in VGS(th) with temperature  
-
-
-
-
-
-
mV/OC VGS = VDS, ID = -1.0mA  
IGSS  
Gate body leakage  
nA  
nA  
VGS = ±10V, VDS = 0V  
VDS = -15V, VGS = 0V  
IDSS  
Zero gate voltage drain current  
VDS = 0.8 Max Rating,  
VGS = 0V, TA = 125OC  
-
-
-1.0  
mA  
-
-0.4  
-1.0  
-2.30  
2.0  
1.7  
1.3  
-
-
-
VGS = VDS = -2.0V  
VGS = VDS = -3.0V  
ID(ON)  
On-state drain current  
-0.6  
A
-1.25  
-
V
GS = VDS = -5.0V  
VGS = -2.0V, ID = -50mA  
GS = -3.0V, ID = -150mA  
-
4.0  
2.0  
1.5  
0.75  
-
Static drain-to-source on-state  
resistance  
RDS(ON)  
-
Ω
V
-
VGS = -5.0V, ID = -300mA  
VGS = -5.0V, ID = -300mA  
ΔRDS(ON) Change in RDS(ON) with temperature  
-
%/OC  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
500  
700  
120  
100  
40  
mmho VGS = -15V, ID = -1.0A  
-
-
-
-
-
-
-
-
250  
125  
60  
20  
20  
30  
30  
-1.5  
VGS = 0V,  
VDS = -15V,  
f = 1.0MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
pF  
-
VDD = -15V,  
ID = -1.25A,  
RGEN = 25Ω  
Rise time  
-
ns  
V
td(OFF)  
tf  
Turn-off delay time  
-
Fall time  
-
VSD  
Diode forward voltage drop  
-1.2  
VGS = 0V, ISD = -500mA  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
0V  
Pulse  
10%  
Generator  
INPUT  
RGEN  
90%  
t(OFF)  
-10V  
t(ON)  
td(ON)  
D.U.T.  
tr  
td(OFF)  
tf  
INPUT  
OUTPUT  
0V  
RL  
90%  
90%  
OUTPUT  
VDD  
10%  
10%  
VDD  
Doc.# DSFP-LP0701  
B071513  
Supertex inc.  
www.supertex.com  
2
LP0701  
Typical Performance Curves  
Output Characteristics  
Saturation Characteristics  
VGS = -5.0V  
-2.5  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0
VGS = -5.0V  
-2.0  
-1.5  
-1.0  
-0.5  
0
-4V  
-4V  
-3V  
-3V  
-2V  
-1V  
-2V  
-1V  
0
-4  
-8  
-12  
-16  
0
-1  
-2  
-3  
-4  
-5  
VDS (volts)  
VDS (volts)  
Transconductance vs. Drain Current  
VDS = -15V  
Power Dissipation vs. Case Temperature  
1.0  
0.8  
0.6  
0.4  
0.2  
2
1
0
TA = -55OC  
SO-8  
TA = 25OC  
TO-92  
TA = 125OC  
0 0  
-1.0  
-2.0  
0
25  
50  
75  
100  
125  
150  
TC (OC)  
ID (amperes)  
Maximum Rated Safe Operating Area  
TO-92/SO-8 (pulsed)  
Thermal Response Characteristics  
-10  
1.0  
0.8  
0.6  
-1.0  
-0.1  
TO-92 (DC)  
SO-8 (DC)  
TO-92  
T = 25V  
PCD = 1.0W  
0.4  
0.2  
0
TC = 25OC  
-0.01  
-0.1  
-1.0  
-10  
-100  
0.001  
0.01  
0.1  
1.0  
10  
VDS (volts)  
tp (seconds)  
Doc.# DSFP-LP0701  
B071513  
Supertex inc.  
www.supertex.com  
3
LP0701  
Typical Performance Curves (cont.)  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
VGS = -2.0V  
10  
8
1.1  
VGS = -3.0V  
VGS = -5.0V  
6
1.0  
0.9  
4
2
0
-1  
-3  
-50  
0
50  
100  
150  
0
-2  
ID (amperes)  
TJ (OC)  
V(th) and RDS Variation with Temperature  
V(th) @ -1.0mA  
Transfer Characteristics  
VDS = -15V  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.6  
-2  
-1  
1.4  
1.2  
1.0  
0.8  
0.6  
T
A = -55O  
C
TA = 25O  
C
TA = 125O  
C
RDS(ON) @ -5V, -300mA  
0
0
-1  
-2  
-3  
-4  
-5  
-50  
0
50  
100  
150  
TJ (OC)  
VGS (volts)  
Capacitance vs. Drain-to-Source Voltage  
f = 1.0MHz  
Gate Drive Dynamic Characteristics  
VDS = -10V  
200  
-10  
-8  
-6  
-4  
-2  
0
-20V  
CISS  
100  
238pF  
COSS  
CRSS  
CISS = 115pF  
0
0
-5  
-10  
-15  
0
1
2
3
4
5
QG (nanocoulombs)  
VDS (volts)  
Doc.# DSFP-LP0701  
B071513  
Supertex inc.  
www.supertex.com  
4
LP0701  
8-Lead SOIC (Narrow Body) Package Outline (LG)  
θ1  
D
8
Note 1  
(Index Area  
D/2 x E1/2)  
E1  
E
Gauge  
Plane  
L2  
Seating  
Plane  
L
θ
1
L1  
Top View  
View B  
View B  
Note 1  
h
A
h
A2  
A
Seating  
Plane  
A1  
e
b
A
Side View  
View A-A  
Note:  
1. This chamfer feature is optional. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier;  
an embedded metal marker; or a printed indicator.  
Symbol  
A
A1  
A2  
b
D
E
E1  
e
h
L
L1  
L2  
θ
0O  
-
θ1  
5O  
-
MIN 1.35* 0.10 1.25 0.31 4.80* 5.80* 3.80*  
NOM 4.90 6.00 3.90  
MAX 1.75 0.25 1.65* 0.51 5.00* 6.20* 4.00*  
0.25 0.40  
Dimension  
(mm)  
1.27  
BSC  
1.04 0.25  
REF BSC  
-
-
-
-
-
-
0.50 1.27  
8O  
15O  
JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005.  
* This dimension is not specified in the JEDEC drawing.  
Drawings are not to scale.  
Supertex Doc. #: DSPD-8SOLGTG, Version I041309.  
Doc.# DSFP-LP0701  
B071513  
Supertex inc.  
www.supertex.com  
5
LP0701  
3-Lead TO-92 Package Outline (N3)  
D
A
Seating  
Plane  
1
2
3
L
c
b
e1  
e
Side View  
Front View  
E
E1  
1
3
2
Bottom View  
Symbol  
A
.170  
-
b
.014†  
-
c
D
.175  
-
E
.125  
-
E1  
e
.095  
-
e1  
.045  
-
L
.500  
-
MIN  
NOM  
MAX  
.014†  
-
.080  
-
Dimensions  
(inches)  
.210  
.022†  
.022†  
.205  
.165  
.105  
.105  
.055  
.610*  
JEDEC Registration TO-92.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc.#: DSPD-3TO92N3, Version E041009.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
information go to http://www.supertex.com/packaging.html.)  
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)  
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
Tel: 408-222-8888  
www.supertex.com  
Doc.# DSFP-LP0701  
B071513  
6

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