LP0701 [SUPERTEX]
P-Channel Enhancement-Mode Lateral MOSFET; P沟道增强模式横向MOSFET
| 型号： | LP0701 |
| 厂家： | 
Supertex, Inc |
| 描述： | P-Channel Enhancement-Mode Lateral MOSFET |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LP0701
Low Threshold
P-Channel Enhancement-Mode
Lateral MOSFET
Ordering Information
Order Number / Package
SO-8
BVDSS
BVDGS
/
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
TO-92
LP0701N3
Die
-16.5V
1.5Ω
-1.25A
-1.0V
LP0701LG
LP0701ND
Advanced MOS Technology
Features
These enhancement-mode (normally-off) transistors utilize a lat-
eral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
highinputimpedanceandnegativetemperaturecoefficientinher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low on-
resistance characteristics are ideally suited for hand held battery
operated applications.
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces
Package Options
(Note 1)
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
S G D
TO-92
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
BVDGS
NC
NC
S
1
2
3
4
8
7
6
5
D
D
D
D
± 10V
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
G
*Distance of 1.6 mm from case for 10 seconds.
SO-8
top view
Note: See Package Outline section for dimensions.
7-23
LP0701
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)*
Power Dissipation
θjc
θja
IDR
IDRM
*
@ TC = 25°C
°C/W
°C/W
TO-92
SO-8
-0.5A
-0.7A
-1.25A
-1.25A
1W
125
83
170
-0.5A
-0.7A
-1.25A
-1.25A
1.5W†
104†
*
†
ID (continuous) is limited by max rated Tj.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
-16.5
-0.5
Typ
Max
Unit
V
Conditions
VGS = 0V, ID = -1mA
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±10V, VDS = 0V
VDS = -15V, VGS = 0V
-0.7
-1.0
-4.0
-100
-100
-1.0
V
Change in VGS(th) with Temperature
Gate Body Leakage
mV/°C
nA
IDSS
Zero Gate Voltage Drain Current
nA
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-0.4
-1.0
-2.3
2.0
VGS = VDS = -2V
A
ID(ON)
ON-State Drain Current
-0.6
VGS = VDS = -3V
-1.25
A
VGS = VDS = -5V
4.0
2.0
VGS = -2V, ID = -50mA
VGS = -3V, ID = -150mA
VGS = -5V, ID = -300mA
VGS = -5V, ID = -300mA
VDS = -15V, ID = -1A
Ω
Static Drain-to-Source
ON-State Resistance
RDS(ON)
1.7
1.3
1.5
∆RDS(ON)
GFS
Change in RDS(ON) with temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
Ω
500
700
120
100
40
m
CISS
COSS
CRSS
td(ON)
tr
250
125
60
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
VGS = 0V, VDS = -15V, f = 1MHz
20
ns
V
Rise Time
20
VDD =-15V, ID = -1.25A,
td(OFF)
tf
Turn-OFF Delay Time
30
RGEN = 25Ω
Fall Time
30
VSD
Diode Forward Voltage Drop
-1.2
-1.5
VGS = 0V, ISD = -500mA
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
OUTPUT
0V
INPUT
90%
90%
RL
OUTPUT
VDD
10%
10%
VDD
7-24
LP0701
Typical Performance Curves
Output Characteristics
Saturation Characteristics
VGS = -5V
-2.5
-2.5
-2.0
-1.5
-1.0
-0.5
0
VGS = -5V
-2.0
-4V
-4V
-3V
-1.5
-3V
-1.0
-0.5
0
-2V
-1V
-2V
-1V
0
-4
-8
-12
-16
0
-1
-2
-3
-4
-5
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0
2
VDS = -15V
TA = -55°C
SO-8
TA = 25°C
TO-92
1
TA = 125°C
0
0
-1.0
-2.0
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
TO-92/SO-8 (pulsed)
Thermal Response Characteristics
-10
-1.0
1.0
0.8
0.6
TO-92 (DC)
SO-8 (DC)
TO-92
TC = 25°C
PD = 1W
0.4
0.2
0
-0.1
T
= 25°C
C
-0.01
-0.1
-1.0
-10
-100
0.001
0.01
0.1
1.0
10
VDS (volts)
tP (seconds)
7-25
LP0701
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
VGS = -2V
10
8
1.1
VGS = -3V
VGS = -5V
6
1.0
0.9
4
2
0
-1
-3
-50
0
50
100
150
0
-50
0
-2
Tj (°C)
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.4
1.2
1.0
0.8
0.6
0.4
1.6
-2
VDS = -15V
1.4
1.2
1.0
0.8
0.6
V(th) @ -1mA
TA = -55°C
TA = 25°C
-1
TA = 125°C
RDS(ON) @ -5V, -300mA
0
0
-1
-2
-3
-4
-5
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
200
-10
-8
-6
-4
-2
0
VDS = -10V
-20V
CISS
100
238pF
COSS
CRSS
CISS = 115pF
0
0
-5
-10
-15
1
2
3
4
5
VDS (volts)
QG (nanocoulombs)
7-26
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