TN0104N3-GP014 [SUPERTEX]
Small Signal Field-Effect Transistor,;型号: | TN0104N3-GP014 |
厂家: | Supertex, Inc |
描述: | Small Signal Field-Effect Transistor, 开关 晶体管 |
文件: | 总4页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TN0104
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
VGS(th)
ID(ON)
(min)
BVDGS
(max)
(max)
TO-92
TO-243AA*
40V
1.8Ω
2.0Ω
1.6V
1.6V
2.0A
2.0A
TN0104N3
—
40V
—
TN0104N8
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Product marking for TO-243AA:
Features
❏ Low threshold —1.6V max.
TN1L❏
Where ❏ = 2-week alpha date code
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
Low Threshold DMOS Technology
❏ Low on resistance
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
Package Options
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
D
G
Absolute Maximum Ratings
D
S
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
BVDGS
± 20V
TO-243AA
S G D
(SOT-89)
TO-92
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* For and TO-92, distance of 1.6 mm from case for 10 seconds.
01/06/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN0104
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
TO-243AA
450mA
630mA
2.40A
2.90A
1.0W
125
15
170
78†
450mA
630mA
2.40A
2.90A
1.6W†
* ID (continuous) is limited by max rated Tj.
† TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
Drain-to-Source
Breakdown Voltage
V
VGS= 0V, ID = 1.0mA
40
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
0.6
1.6
-5.0
100
1
V
mV/°C
nA
VGS = VDS, ID = 500µA
VGS = VDS, ID = 1.0mA
VGS = ±20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
-3.8
0.1
IDSS
Zero Gate Voltage Drain Current
µA
VGS =0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
100
µA
ID(ON)
ON-State Drain Current
0.35
1.1
2.6
5.0
2.3
1.5
VGS = 3V, VDS = 20V
VGS = 5V, VDS = 20V
VGS = 10V, VDS = 20V
VGS = 3V, ID = 50mA
VGS = 5V, ID = 250mA
VGS = 10V, ID = 1A
VGS = 10V, ID = 1A
VGS =10V, ID = 1A,
VDS = 20V, ID = 0.5A
0.5
2.0
A
RDS(ON)
Static Drain-to-Source
ON-State Resistance
All Packages
2.5
1.8
2.0
1.0
Ω
TO-92
TO-243AA
∆RDS(ON)
GFS
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.7
%/°C
Ω
0.34
0.45
CISS
COSS
CRSS
td(ON)
tr
70
50
VGS = 0V, VDS = 20V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
15
3.0
7.0
6.0
5.0
1.2
5.0
8.0
9.0
8.0
1.8
2.0
Rise Time
VDD = 20V, ID = 1A
RGEN = 25Ω
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
VSD
Diode Forward
TO-92
VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 0.5A
VGS = 0V, ISD = 1A
V
TO-243AA
Voltage Drop
trr
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
TN0104
Typical Performance Curves
Output Characteristics
Saturation Characteristics
3.75
3.75
3.0
2.25
1.5
0.75
0
3.0
V
= 10V
GS
V
= 10V
2.25
1.5
0.75
0
GS
8V
6V
8V
6V
4V
2V
4V
2V
0
2
4
6
8
10
0
10
20
30
40
50
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
0.75
0.60
0.45
0.30
0.15
0
5
4
3
2
V
= 25V
DS
T
= -55°ꢀC
= 25°ꢀC
A
T
A
T
= 125°ꢀC
A
TO-243AA
(T = 25°C)
A
TO-92
1
0
0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
ID (amperes)
TC (°ꢀC)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
1.0
0.8
0.6
0.4
0.2
0
TO-243AA
T
= 25°C
A
P
= 1.6W
D
TO-39 (DC)
TO-92 (DC)
TO-243AA (DC)
(T = 25°C)
A
0.1
TO-92
P
T
= 1W
D
C
= 25°C
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
VDS (volts)
tp(seconds)
3
TN0104
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.3
10
8
V
= 5V
GS
1.2
1.1
1.0
0.9
0.8
6
V
= 10V
GS
4
2
0
1
-50
0
50
100
150
0
2
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
3.0
2.4
1.8
1.2
0.6
T
= -55°C
A
25
V
= 25V
°C
DS
R
@ 5V, 0.25A
DS(ON)
125°C
V
@ 0.5mA
(th)
0
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
100
10
8
V
= 10V
DS
75
50
55pF
40V
6
CISS
4
COSS
25
0
2
CRSS
50pF
0
0
10
20
30
40
0.5
0.65
0.8
0.95
1.1
1.25
QG (nanocoulombs)
VDS (volts)
01/06/03
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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