TN0624N3 [SUPERTEX]
Small Signal Field-Effect Transistor, 0.4A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92;
| 型号： | TN0624N3 |
| 厂家： | 
Supertex, Inc |
| 描述： | Small Signal Field-Effect Transistor, 0.4A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 开关 晶体管 |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN0620
TN0624
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
ID(ON)
VGS(th)
(max)
BVDGS
200V
240V
(max)
(min)
TO-92
TO-220
6.0Ω
6.0Ω
1.0A
1.0A
1.6V
1.6V
TN0620N3
TN0620N5
TN0624N3
—
† MIL visual screening available
High Reliability Devices
Low Threshold DMOS Technology
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Features
■ Low threshold — 1.6V max.
■ High input impedance
■ Low input capacitance — 110pF typical
■ Fast switching speeds
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
■ Low on resistance
■ Free from secondary breakdown
■ Low input and output leakage
■ Complementary N- and P-channel devices
Package Options
Applications
■ Logic level interfaces – ideal for TTL and CMOS
■ Solid state relays
■ Battery operated systems
■ Photo voltaic drives
■ Analog switches
■ General purpose line drivers
■ Telecom switches
G
D
Absolute Maximum Ratings
Drain-to-Source Voltage
S
S G D
TO-220
TAB: DRAIN
TO-92
BVDSS
Drain-to-Gate Voltage
BVDGS
± 20V
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
7-55
TN0620/TN0624
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
TO-220
0.4A
1.5A
2.0A
2.5A
1W
125
2.7
170
70
0.4A
1.5A
2.0A
2.5A
45W
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
240
200
0.6
Typ
Max
Unit
Conditions
Drain-to-Source
BVDSS
TN0624
TN0620
V
VGS = 0V, ID = 2.0mA
Breakdown Voltage
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
1.6
-5.0
100
10
V
mV/°C
nA
VGS = VDS, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
Change in VGS(th) with Temperature
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
µA
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.5
1.0
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 0.25A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
VDS = 25V, ID = 0.5A
A
Static Drain-to-Source
ON-State Resistance
RDS(ON)
6.0
4.0
8.0
6.0
1.4
Ω
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
Ω
300
400
110
40
m
150
85
35
10
8
VGS = 0V, VDS = 25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
10
VDD = 25V
ID = 1.0A
Rise Time
ns
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
20
20
1.8
RGEN = 25Ω
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 1.0A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
INPUT
PULSE
GENERATOR
10%
0V
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
50Ω
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-56
TN0620/TN0624
Typical Performance Curves
Output Characteristics
Saturation Characteristics
4.0
4.0
3.2
2.4
1.6
0.8
0
3.2
V
=
GS
10V
8V
V
=
GS
2.4
1.6
0.8
0
10V
8V
6V
6V
4V
4V
3V
2V
3V
2V
0
0
1
10
20
30
40
50
0
2
4
6
8
10
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
1.0
0.8
0.6
0.4
0.2
0
V
= 25V
TO-220
DS
T
= -55°C
A
T
= 25°C
A
A
T
= 150°C
TO-39
TO-92
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
1.0
0.8
0.6
0.4
0.2
0
TO-220 (DC)
TO-92 (DC)
TO-220
P
T
= 45W
D
= 25°C
C
0.1
TO-92
P
T
= 1W
D
= 25°C
T
= 25°C
C
C
0.01
10
100
1000
0.001
0.01
0.1
1
10
VDS (volts)
tp(seconds)
7-57
TN0620/TN0624
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
15
12
9
1.1
V
= 5V
GS
V
= 10V
GS
1.0
6
3
0.9
0
-50
0
50
100
150
0
0.8
1.6
2.4
3.2
4.0
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
4.0
3.2
2.4
1.6
0.8
0
2.0
1.6
1.2
0.8
0.4
0
1.4
1.2
1.0
0.8
0.6
V
= 25V
DS
T
= -55
°C
V
@ 1mA
(th)
A
= 25°
C
T
R
@ 10V, 0.5A
A
DS
= 150
6
°C
T
A
0
2
4
8
10
-50
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
200
150
100
50
10
8
V
= 10V
DS
6
V
= 40V
DS
CISS
178 pF
4
COSS
2
0
100 pF
0.5
CRSS
0
1.5
0
10
20
30
40
0
1.0
2.0
2.5
QG (nanocoulombs)
VDS (volts)
7-58
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