TN2106N3-GP005 [SUPERTEX]

SMALL SIGNAL, FET;


型号：	TN2106N3-GP005
厂家：	Supertex, Inc
描述：	SMALL SIGNAL, FET 开关晶体管
文件：	总6页 (文件大小：694K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Supertex inc.

VN2210

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

The Supertex VN2210 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

Package

R_DS(ON)

Part Number

Packing

V_GS(th)

Option

TO-39

TO-92

BV_DSS/BV_DGS

(max)

VN2210N2-G

500/Bag

100V

0.35Ω

8.0V

TN2106N3-G

1000/Bag

TN2106N3-G P002

TN2106N3-G P003

TN2106N3-G P005

TN2106N3-G P013

TN2106N3-G P014

Pin Conﬁguration

TO-92

2000/Reel

DRAIN

GATE

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

SOURCE

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

DRAIN

GATE

TO-39

TO-92

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±20V

Product Marking

Drain-to-source voltage

Drain-to-gate voltage

2210N2

YYWW

YY = Year Sealed

WW = Week Sealed

Gate-to-source voltage

Operating and storage temperature

-55^OC to +150^OC

Package may or may not include the following marks: Si or

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-39

SiVN

2 2 1 0

YYWW

YY = Year Sealed

WW = Week Sealed

Typical Thermal Resistance

= “Green” Packaging

Package

θ_ja

Package may or may not include the following marks: Si or

TO-39

N/A

TO-92

132^OC/W

Doc.# DSFP-VN2210

E082013

Supertex inc.

www.supertex.com

VN2210

Thermal Characteristics

I_D

Power Dissipation

†

Package

I_DR

I_DRM

(continuous)^†

(pulsed)

@T_C= 25^OC

TO-39

TO-92

Notes:

1.7A

1.2A

10A

0.36W

0.74W

1.7A

1.2A

10A

8.0A

†

I_D(continuous) is limited by max rated T_j.

Electrical Characteristics (T_A= 25°C unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

Parameter

Min

Typ

Max

Units Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

100

V_GS= 0V, I_D= 10mA

V_GS= V_DS, I_D= 10mA

0.8

2.4

-5.5

100

ΔV_GS(th)Change in V_GS(th)with temperature

-4.3

mV/^OC V_GS= V_DS, I_D= 10mA

I_GSS

Gate body leakage current

µA

V_GS= ±20V, V_DS= 0V

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero gate voltage drain current

V_DS= 0.8 Max Rating,

V_GS= 0V, T_A= 125^OC

3.0

4.5

V_GS= 5.0V, V_DS= 25V

V_GS= 10V, V_DS= 25V

V_GS= 5.0V, I_D= 1.0A

V_GS= 10V, I_D= 4.0A

I_D(ON)

On-state drain current

8.0

0.4

0.5

0.35

1.2

R_DS(ON)

Static drain-to-source on-state resistance

0.27

0.85

ΔR_DS(ON)Change in R_DS(ON)with temperature

%/^OC V_GS= 10V, I_D= 4.0A

mmho V_DS= 25V, I_D= 2.0A

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Forward transconductance

Input capacitance

1200

300

125

500

200

1.6

_GS= 0V,

Common source output capacitance

Reverse transfer capacitance

Turn-on time

V_DS= 25V,

f = 1.0MHz

V_DD= 25V,

I_D= 2.0A,

R_GEN= 10Ω

Rise time

t_d(OFF)

t_f

Turn-off time

Fall time

V_SD

Diode forward voltage drop

Reverse recovery time

1.0

500

V_GS= 0V, I_SD= 4.0A

V_GS= 0V, I_SD= 1.0A

t_rr

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

10V

VDD

90%

INPUT

Pulse

R_L

10%

Generator

OUTPUT

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

R_GEN

t_f

t_r

VDD

OUTPUT

INPUT

D.U.T.

10%

90%

Doc.# DSFP-VN2210

E082013

Supertex inc.

www.supertex.com

VN2210

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.0

0.8

0.6

0.4

0.2

1.1

1.0

0.9

V_GS= 5.0V

V_GS= 10V

-50

100

150

4.0

8.0

T_j(^OC)

I_D(amperes)

V_GSand RV_DSVariation with Temperature

Transfer Characteristics

V_DS= 25^OC

1.2

R_DS(ON)@ 10V, 4.0A

2.0

1.6

1.2

0.8

0.4

8.0

6.0

4.0

2.0

1.1

1.0

0.9

0.8

0.7

T_A= -55^OC

25^O

150^OC

V_GS(th)@ 10mA

100

2.0

4.0

6.0

8.0

-50

150

T_j(^OC)

V_GS(volts)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

500

f = 1.0MHz

V_DS= 10V

8.0

6.0

4.0

2.0

375

C_ISS

250

900 pF

V_DS= 40V

C_OSS

125

300 pF

2.0

C_RSS

4.0

6.0

8.0

Q_G(nanocoulombs)

V_DS(volt)

Doc.# DSFP-VN2210

E082013

Supertex inc.

www.supertex.com

VN2210

Typical Performance Curves (cont.)

Output Characteristics

Saturation Characteristics

8.0

4.0

V_GS= 10V

8.0

4.0

2.0

4.0

6.0

8.0

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Case Temperature

4.0

3.2

2.4

1.6

0.8

V_DS= 25^OC

8.0

TO-39

T_A= 55^OC

6.0

25^OC

4.0

150^OC

2.0

TO-92

0.8

1.6

2.4

3.2

4.0

100

125

150

I_D(amperes)

T_C(^OC)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

TO-39 (pulsed)

TO-92 (pulsed)

TO-39 (DC)

1.0

0.1

TO-92 (DC)

TO-92

T = 25^OC

P^C_D= 1.0W

T_C= 25^OC

0.01

0.1

1.0

100

0.001

0.01

0.1

1.0

V_DS(volts)

t_P(seconds)

Doc.# DSFP-VN2210

E082013

Supertex inc.

www.supertex.com

VN2210

3-Lead TO-39 Package Outline (N2)

ΦD

ΦD1

Φa

Seating

Plane

Φb

Bottom View

Side View

Symbol

.240

Φa

.190

Φb

.016

ΦD

ΦD1

.029

.500

MIN

NOM

MAX

.350

.315

.009

.028

Dimension

(inches)

45^O

NOM

90^O

NOM

.260

.210

.021

.370

.335

.125

.034

.040

.560*

JEDEC Registration TO-39.

* This dimension is not speciﬁed in the JEDEC drawing.

Drawings not to scale.

Supertex Doc. #: DSPD-3TO39N2, Version B052009.

Doc.# DSFP-VN2210

E082013

Supertex inc.

www.supertex.com

VN2210

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

.014^†

.175

.125

.080

.045

.500

MIN

NOM

MAX

.014^†

.095

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Doc.# DSFP-VN2210

E082013

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