TN2540_13 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FET;
| 型号： | TN2540_13 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FET |
| 文件： | 总6页 (文件大小：741K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Supertex inc.
TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
► Low threshold (2.0V max.)
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
► High input impedance
► Low input capacitance (125pF max.)
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Logic level interfaces - ideal for TTL and CMOS
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog and Telecom switches
► General purpose line drivers
Ordering Information
Product Summary
RDS(ON)
ID(ON)
VGS(th)
Part Number
Package Options
Packing
BVDSS/BVDGS
(max)
(min)
(max)
TN2540N3-G
TO-92
1000/Bag
2000/Reel
2000/Reel
2000/Reel
2000/Reel
2000/Reel
400V
12Ω
1.0A
2.0V
TN2540N3-G P002 TO-92
TN2540N3-G P003 TO-92
TN2540N3-G P005 TO-92
TN2540N3-G P013 TO-92
TN2540N3-G P014 TO-92
Pin Configuration
DRAIN
TN2540N8-G
TO-243AA (SOT-89) 2000/Reel
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92
Taping Specifications and Winding Styles
SOURCE
SOURCE
DRAIN
GATE
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
GATE
Absolute Maximum Ratings
TO-92
TO-243AA (SOT-89)
Parameter
Value
Product Marking
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
BVDSS
BVDGS
SiTN
2 5 4 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
±20V
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
TO-92
W = Code for week sealed
TN5DW
Typical Thermal Resistance
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Package
θja
TO-92
132OC/W
133OC/W*
TO-243AA (SOT-89)
* Mounted on FR5 Board, 25mm x 25mm x 1.57mm
Doc.# DSFP-TN2540
A062113
Supertex inc.
www.supertex.com
TN2540
Thermal Characteristics
ID
ID
Power Dissipation
†
Package
IDR
IDRM
(continuous)†
(pulsed)
@TA = 25OC
TO-92
175mA
260mA
2.0A
1.8A
1.0W
1.6W‡
175mA
260mA
2.0A
1.8A
TO-243AA (SOT-89)
Notes:
† ID (continuous) is limited by max rated Tj .
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym
BVDSS
VGS(th)
Parameter
Min
Typ
Max Units Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
400
-
-
V
V
VGS = 0V, ID = 100µA
VGS = VDS, ID= 1.0mA
0.6
-
2.0
ΔVGS(th) Change in VGS(th) with temperature
-
-
-
-2.5
-4.0 mV/OC VGS = VDS, ID= 1.0mA
IGSS
Gate body leakage
-
-
100
10
nA
µA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero gate voltage drain current
V
DS = 0.8 Max Rating,
-
-
1.0
mA
A
VGS = 0V, TA = 125°C
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 150mA
VGS = 10V, ID = 500mA
0.3
0.5
1.0
8.0
8.0
-
-
ID(ON)
On-state drain current
0.75
-
-
12
RDS(ON) Static drain-to-source on-state resistance
Ω
-
12
ΔRDS(ON) Change in RDS(ON) with temperature
-
0.75 %/OC VGS = 10V, ID = 500mA
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transductance
Input capacitance
125
200
95
20
10
-
-
mmho VDS = 25V, ID = 100mA
-
-
-
-
-
-
-
-
-
125
70
25
20
15
25
20
1.8
-
V
GS = 0V,
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
pF
ns
VDS = 25V,
f = 1.0MHz
VDD = 25V,
Rise time
-
ID = 1.0A,
td(OFF)
tf
Turn-off delay time
-
RGEN = 25Ω
Fall time
-
VSD
trr
Diode forward voltage drop
Reverse recovery time
-
V
VGS = 0V, ISD = 200mA
VGS = 0V, ISD = 1.0A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
VDD
90%
INPUT
0V
Pulse
RL
10%
Generator
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tf
tr
VDD
OUTPUT
0V
INPUT
D.U.T.
10%
10%
90%
90%
Doc.# DSFP-TN2540
A062113
Supertex inc.
www.supertex.com
2
TN2540
Typical Performance Curves
Output Characteristics
Saturation Characteristics
2.0
1.0
0.8
0.6
0.4
VGS = 10V
8.0V
6.0V
1.6
VGS = 10V
8V
6V
5.0V
1.2
0.8
0.4
0
5V
4.0V
0.2
0.0
4V
3V
3.0V
10
0
2
4
6
8
0
10
20
30
40
50
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
1.0
0.8
0.6
0.4
2.0
VDS =15V
TO-243AA
TO-92(DC)
1.0
TA = -55OC
25OC
125OC
0.2
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
ID (amperes)
TA (OC)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
0.8
0.6
0.4
0.2
0
TO-243AA
PD = 1.6W
TC = 25OC
TO-243AA(pulsed)
TO-243AA(DC)
TO-92(DC)
1.0
0.1
0.01
0.001
0.1
1.0
10
100
0.001
0.01
0.1
1.0
10
tp (seconds)
VDS (volts)
Doc.# DSFP-TN2540
A062113
Supertex inc.
www.supertex.com
3
TN2540
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.1
50
40
30
20
10
0
VGS = 4.5V
VGS = 10V
1.0
0.9
-50
0
50
100
150
0
0.4
0.8
1.2
1.6
2.0
Tj (OC)
ID (amperes)
V(th) and RDS Variation with Temperature
Transfer Characteristics
1.5
2.5
VDS = 25OC
1.4
RDS(ON) @ 10V, 0.5A
2.0
1.2
0.9
0.6
0.3
0
V(th) @ 1mA
1.2
TA = -55OC
1.5
1.0
25OC
1.0
0.8
0.5
125OC
0.6
0
150
0
2
4
6
8
10
-50
0
50
100
Tj (OC)
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
200
10
f = 1MHz
8
6
4
2
0
150
100
50
VDS = 10V
CISS
VDS = 40V
260pF
CRSS
95pF
COSS
0
0
10
20
30
40
0
0.4
0.8
1.2
1.6
2.0
QG (nanocoulombs)
VDS (volts)
Doc.# DSFP-TN2540
A062113
Supertex inc.
www.supertex.com
4
TN2540
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
-
b
.014†
-
c
D
.175
-
E
.125
-
E1
.080
-
e
e1
.045
-
L
.500
-
MIN
NOM
MAX
.014†
-
.095
-
Dimensions
(inches)
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Doc.# DSFP-TN2540
A062113
Supertex inc.
www.supertex.com
5
TN2540
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Symbol
A
1.40
-
b
0.44
-
b1
0.36
-
C
0.35
-
D
D1
1.62
-
E
2.29
-
E1
2.00†
-
e
e1
H
L
0.73†
-
MIN
NOM
MAX
4.40
-
3.94
-
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Doc.# DSFP-TN2540
A062113
6
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