TN2640ND [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | TN2640ND |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN2640
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
(max)
VGS(th)
(max)
ID(ON)
(min)
BVDGS
SO-8
TO-92
DPAK
Die†
400V
5.0Ω
2.0V
2.0A
TN2640LG
TN2640N3
TN2640K4
TN2640ND
†
MIL visual screening available.
Low Threshold DMOS Technology
Features
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
❏
❏
❏
❏
❏
❏
❏
❏
Low threshold — 2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
Complementary N- and P-channel devices
Applications
Package Options
❏
❏
❏
❏
❏
❏
❏
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
D (TAB)
Battery operated systems
Photo voltaic drives
G
S
Analog switches
General purpose line drivers
Telecom switches
SGD
TO-252
(D-PAK)
TO-92
Absolute Maximum Ratings
Drain-to-Source Voltage
D
D
D
D
1
2
3
4
8
7
6
5
NC
NC
S
BVDSS
BVDGS
± 20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
G
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
top view
SO-8
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
12/19/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2640
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
220mA
260mA
500mA
2.0A
2.0A
3.0A
1.0W
1.3W†
2.5W†
125
24
170
96†
50
220mA
260mA
500mA
2.0A
2.0A
3.0A
SO-8
DPAK
6.25
* ID (continuous) is limited by max rated Tj.
† Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
Drain-to-Source
Breakdown Voltage
BVDSS
400
0.8
V
VGS = 0V, ID = 1.0mA
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
2.0
-4.0
100
10
V
mV/°C
nA
VGS = VDS, ID= 2.0mA
VGS = VDS, ID= 2.0mA
VGS = ± 20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
-2.5
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
1.5
2.0
3.5
4.0
3.2
3.0
VGS = 5.0V, VDS = 25V
A
V
GS = 10V, VDS = 25V
VGS = 4.5V, ID = 500mA
GS = 10V, ID = 500mA
RDS(ON)
5.0
5.0
Static Drain-to-Source
ON-State Resistance
Ω
V
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
VGS = 10V, ID = 500mA
VDS = 25V, ID = 100mA
Ω
200
330
180
35
m
225
70
25
15
20
25
27
0.9
VGS = 0V, VDS = 25V
f = 1.0 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
7.0
4.0
15
VDD = 25V,
Rise Time
ns
ID = 2.0A,
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
20
RGEN = 25Ω
22
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS = 0V, ISD = 200mA
VGS = 0V, ISD = 1.0A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
TN2640
Typical Performance Curves
Output Characteristics
Saturation Characteristics
5.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 10V
6V
8V
4.0
VGS = 10V
8V
4V
3V
3.0
2.0
1.0
0
6V
4V
3V
2V
2V
0
2
4
6
8
10
0
0
0
10
30
40
50
20
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
2.0
1.6
1.2
0.8
0.4
0
3.0
2.4
1.8
1.2
0.6
0
DPAK
V
= 25V
DS
SO-8
T
= -55°C
A
TO-92
25°C
125°C
3.0
4.0
5.0
0
25
50
75
100
125
150
1.0
2.0
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
1.0
0.8
0.6
0.4
0.2
0
TO-92 (pulsed)
DPAK (DC)
SO-8 (pulsed)
TO-92 (DC)
0.1
SO-8 (DC)
0.01
0.001
T
= 25°C
TO-92
C
T
= 25°C
C
P
= 1.0W
D
10
100
1000
0.001
0.01
0.1
1.0
10
VDS (volts)
tp (seconds)
3
TN2640
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.15
10
8
V
= 5V
GS
1.10
1.05
1.00
0.95
V
= 10V
6
GS
4
2
0.9
0.90
0
-50
0
50
100
150
0
1.0
2.0
3.0
4.0
5.0
150
5
I
D (amperes)
Tj (°C)
Transfer Characteristics
VTH and RDS Variation with Temperature
3.0
2.4
1.8
1.2
0.6
0
1.4
1.2
1.0
0.8
0.6
0.4
2.2
1.8
1.4
1.0
0.6
0.2
25°C
V
@ 2mA
(th)
125°C
TA = -55°C
VDS = 25V
R
@ 10V, 0.5A
DS(ON)
0
2
4
6
8
10
-50
0
50
100
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
400
10
8
300
200
653pF
6
V
= 10V
V
DS
C
ISS
4
= 40V
DS
100
0
2
0
C
OSS
253pF
1
C
RSS
3
0
10
20
30
40
0
2
4
QG (nanocoulombs)
VDS (volts)
12/19/01rev.1
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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