TP2506NJ [SUPERTEX]

P-Channel Enhancement-Mode Vertical DMOS FET;


型号：	TP2506NJ
厂家：	Supertex, Inc
描述：	P-Channel Enhancement-Mode Vertical DMOS FET
文件：	总5页 (文件大小：669K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Supertex inc.

TP0606

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (-2.4V max.)

► High input impedance

► Low input capacitance (80pF typ.)

► Fast switching speeds

► Low on-resistance

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-induced

secondary breakdown.

► Free from secondary breakdown

► Low input and output leakage

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Package

Wafer / Die Options

Device

TO-92

(Die in wafer form)

(Die on adhesive tape)

(Die in wafﬂe pack)

TP0606

TP0606N3-G

TP2506NW

TP2506NJ

TP2506ND

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Speciﬁcation VF25 for layout and dimensions.

Product Summary

Pin Conﬁguration

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

(V)

BV_DSS/BV_DGS

Device

(max)

(Ω)

(min)

(A)

(V)

TP0606N3-G

-60

3.5

-1.5

-2.4

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±20V

GATE

Drain-to-source voltage

TO-92 (N3)

Drain-to-gate voltage

Product Marking

Gate-to-source voltage

-55^OC to +150^OC

SiTP

Operating and storage temperature

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

0 6 0 6

YYWW

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92 (N3)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP0606

Thermal Characteristics

Power Dissipation

@T_C= 25^OC

(W)

I_D

†

θ_jc

(^OC/W)

θ_ja

(^OC/W)

I_DR

I_DRM

(A)

(continuous)^†

(mA)

(pulsed)

(A)

Package

(mA)

TO-92

320

-3.5

1.0

125

170

320

-3.5

Notes:

† I_D(continuous) is limited by max rated T_j.

Electrical Characteristics (T_A= 25^OC unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

Parameter

Min

Typ

Max Units Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

-60

V_GS= 0V, I_D= -2.0mA

V_GS= V_DS, I_D= -1.0mA

-1.0

-2.4

ΔV_GS(th)Change in V_GS(th)with temperature

-5.0 mV/^OC V_GS= V_DS, I_D= -1.0mA

I_GSS

Gate body leakage

-100

-10

µA

V_GS= ± 20V, V_DS= 0V

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero gate voltage drain current

_DS= 0.8 Max Rating,

V_GS= 0V, T_A= 125°C

_GS= -5.0V, V_DS= -25V

-1.0

-0.4 -0.6

-1.5 -2.5

I_D(ON)

ON-state drain current

V_GS= -10V, V_DS= -25V

V_GS= -5.0V, I_D= -250mA

V_GS= -10V, I_D= -750mA

5.0

3.0

7.0

3.5

1.7

R_DS(ON)Static drain-to-source on-state resistance

ΔR_DS(ON)Change in R_DS(ON)with temperature

%/^OC V_GS= -10V, I_D= -750mA

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Forward transductance

Input capacitance

300

400

mmho V_DS= -25V, I_D= -750mA

150

-1.8

_GS= 0V,

Common source output capacitance

Reverse transfer capacitance

Turn-on delay time

V_DS= -25V,

f = 1.0MHz

V_DD= -25V,

I_D= -1.0A,

R_GEN= 25Ω

Rise time

t_d(OFF)

t_f

Turn-off delay time

Fall time

V_SD

Diode forward voltage drop

Reverse recovery time

V_GS= 0V, I_SD= -1.0A

t_rr

300

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

Pulse

10%

Generator

INPUT

R_GEN

-10V

90%

t_(OFF)

t_(ON)

t_d(ON)

D.U.T.

t_d(OFF)

t_f

t_r

INPUT

Output

R_L

90%

OUTPUT

10%

V_DD

VDD

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP0606

Typical Performance Curves

Output Characteristics

Saturation Characteristics

-5.0

-4.0

-3.0

-2.0

-1.0

-4.0

-3.0

-2.0

-1.0

V_GS= -10V

-9V

V_GS= -10V

-9V

-8V

-7V

-6V

-7V

-6V

-5V

-4V

-5V

-4V

-10

-20

-30

-40

-50

-2.0

-4.0

-6.0

-8.0

-10

V_DS(volts)

Transconductance vs. Drain Current

V_DS= -25V

Power Dissipation vs. Case Temperature

2.0.

0.6

0.5

0.4

0.3

0.2

0.1

T_A= -55^OC

T_A= 25^OC

TO-92

1.0

T_A= -150^OC

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-3.2

100

125

150

T_C(^OC)

I_D(amperes)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

-10

-1.0

T_C= 25^OC

TO-92 (DC)

-0.1

TO-92

P_D= 1.0W

T_C= 25^OC

-0.01

-1.0

-10

-100

-1000

0.001

0.01

0.1

1.0

V_DS(volts)

t_p(seconds)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP0606

Typical Performance Curves (cont.)

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

9.0

6.0

3.0

1.1

V_GS= -5.0V

V_GS= -10V

1.0

0.9

-50

-0.8

-1.6

-2.4

-3.2

-4.0

100

150

I_D(amperes)

T_j(^OC)

V_(th)and R_DSVariation with Temperature

Transfer Characteristics

-5.0

2.0

1.6

1.2

0.8

0.4

V_DS= -25V

1.4

1.2

1.0

0.8

0.6

-4.0

-3.0

-2.0

-1.0

R_DS(ON)@ -10V, -7.5A

T_A= -55^OC

25^OC

V_(th)@ -1.0mA

125^OC

-8.0

-2.0

-4.0

-6.0

-10

-50

100

150

T_j(^OC)

V_GS(volts)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

-10

-8.0

-6.0

-4.0

-2.0

200

f = 1MHz

V_DS= -10V

150

100

200 pF

V_DS= -40V

C_ISS

C_OSS

C_RSS

75 pF

-10

-20

-30

-40

0.5

1.0

1.5

2.0

2.5

V_DS(volts)

Q_G(nanocoulombs)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP0606

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

.014^†

.175

.125

.080

.045

.500

MIN

NOM

MAX

.014^†

.095

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Doc.# DSFP-TP0606

B031411

TP2506NJ [SUPERTEX]

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