TP2540N3-G [SUPERTEX]

Small Signal Field-Effect Transistor, 0.086A I(D), 400V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3;


型号：	TP2540N3-G
厂家：	Supertex, Inc
描述：	Small Signal Field-Effect Transistor, 0.086A I(D), 400V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 开关晶体管
文件：	总6页 (文件大小：713K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TP2540

P-Channel Enhancement Mode

Vertical DMOS FETs

Features

General Description

► Low threshold (-2.4V max.)

► High input impedance

► Low input capacitance (125pF max.)

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

This low threshold enhancement-mode (normally-off)

transistorutilizesaverticalDMOSstructureandSupertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-

induced secondary breakdown.

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

Ordering Information

R_DS(ON)

V_GS(th)

I_D(ON)

Package Options

Device

BV_DSS/BV_DGS

(max)

(Ω)

(max)

(V)

(min)

(A)

(V)

TO-92

TO-243AA (SOT-89)

Die*

TP2540

TP2540N3-G

TP2540N8-G

TP2540ND

-400

-2.4

-0.4

-G indicates package is RoHS compliant (‘Green’)

MIL visual screening available.

Pin Conﬁgurations

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

DRAIN

GATE

TO-92 (N3)

TO-243AA (SOT-89) (N8)

Value

BV_DSS

BV_DGS

±20V

Product Marking

Drain-to-source voltage

Drain-to-gate voltage

SiTP

2 5 4 0

Y Y WW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

-55°C to +150°C

+300°C

Package may or may not include the following marks: Si or

TO-92 (N3)

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

W = Code for week sealed

TP5DW

= “Green” Packaging

Package may or may not include the following marks: Si or

Distance of 1.6mm from case for 10 seconds.

TO-243AA (SOT-89) (N8)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP2540

Thermal Characteristics

Power Dissipation

@ T_A= 25^OC

I_D

(pulsed)

(A)

†

θ_jc

θ_j_a

I_DR

I_DRM

(continuous)^†

(mA)

Package

^OC/W

(mA)

(A)

(W)

0.74

1.6^‡

TO-92

-86

-0.6

-1.2

125

170

78^‡

-86

-0.6

-1.2

TO-243AA (SOT-89)

-125

†

‡

I_D(continuous) is limited by max rated T_j.

Mounted on FR5 board, 25mm x 25mm x 1.57mm.

Electrical Characteristics (T_A= 25°C unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

∆V_GS(th)

I_GSS

Parameter

Min

-400

-1.0

Typ

Max

Units

Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

Change in V_GS(th)with temperature

Gate body leakage

V_GS= 0V, I_D= -2.0mA

V_GS= V_DS, I_D= -1.0mA

-2.4

4.8

-100

-10

mV/^OC V_GS= V_DS, I_D= -1.0mA

μA

V_GS= ± 20V, V_DS= 0V

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero gate voltage drain current

V_DS= 0.8 Max Rating,

V_GS= 0V, T_A= 125°C

-1.0

-0.2

-0.4

-0.3

-1.1

V_GS= -4.5V, V_DS= -25V

V_GS= -10V, V_DS= -25V

V_GS= -4.5V, I_D= -100mA

V_GS= -10V, I_D= -100mA

V_DS= -25V, I_D= -100mA

I_D(ON)

On-state drain current

0.75

R_DS(ON)

Static drain-to-source on-state resistance

∆R_DS(ON)Change in R_DS(ON)with temperature

%/^OC

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Forward transconductance

Input capacitance

100

175

mmho

125

-1.8

V_GS= 0V,

V_DS= -25V,

f = 1.0 MHz

Common source output capacitance

Reverse transfer capacitance

Turn-on delay time

V_DD= -25V,

I_D= -0.4A,

R_GEN= 25Ω

Rise time

t_d(OFF)

t_f

Turn-off delay time

Fall time

V_SD

t_rr

Diode forward voltage drop

Reverse recovery time

V_GS= 0V, I_SD= -100mA

300

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

PULSE

10%

GENERATOR

INPUT

R_GEN

-10V

90%

t_(OFF)

t_(ON)

t_d(ON)

D.U.T.

Output

t_d(OFF)

t_F

t_r

INPUT

90%

R_L

OUTPUT

10%

V_DD

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP2540

Typical Performance Curves

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP2540

Typical Performance Curves (cont.)

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.1

100

= -4.5V

1.0

0.9

= -10V

-50

100

150

-0.4

-0.8

-1.2

-1.6

-2.0

I_D(amperes)

T_j(°C)

Transfer Characteristics

V_(th)and R_DSVariation with Temperature

-2

-1.6

-1.2

-0.8

-0.4

2.5

2.0

1.5

1.0

0.5

1.2

1.1

1.0

0.9

0.8

= - 25V

= -55°C

@ -10V, -0.1A

DS(ON)

25°C

@ -1mA

100

(th)

125°C

-2

-4

-6

-8

-10

-50

150

V_GS(volts)

T_j(°C)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

200

150

-10

-8

f = 1MHz

= - 10V

-6

= - 40V

100

-4

190 pF

C_ISS

-2

60pF

0.4

C_OSS

C_RSS

1.2

-10

-20

-30

-40

0.8

1.6

2.0

Q_G(nanocoulombs)

V_DS(volts)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP2540

3-Lead TO-92 Package Outline (N3)

Seating Plane

Side View

Front View

Bottom View

Symbol

.175

.125

.095

.045

.500

MIN

NOM

MAX

.170

.014^†

.080

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

TP2540

3-Lead TO-243AA (SOT-89) Package Outline (N8)

Symbol

1.40

0.36

0.35

4.40

1.62

2.29

2.00^†

0.89

MIN

NOM

MAX

0.44

3.94

Dimensions

(mm)

1.50

BSC

3.00

BSC

1.60

0.56

0.48

0.44

4.60

1.83

2.60

2.29

4.25

1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing

Drawings not to scale.

Supertex Doc. #: DSPD-3TO243AAN8, Version E051509.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an

adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the

replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications

are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

Doc.# DSFP-TP2540

A052109

www.supertex.com

TP2540N3-G [SUPERTEX]

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