VN0109 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FET;
| 型号： | VN0109 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FET |
| 文件： | 总5页 (文件大小：664K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Supertex inc.
VN0109
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain
Applications
► Motor controls
► Converters
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Product Summary
RDS(ON)
(max)
Part Number
Package Option
Packing
IDSS
(min)
BVDSS/BVDGS
VN0109N3-G
TO-92
1000/Bag
90V
3.0Ω
2.0A
VN0109N3-G P002
VN0109N3-G P003
VN0109N3-G P005
VN0109N3-G P013
VN0109N3-G P014
Pin Configuration
TO-92
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
GATE
TO-92
Drain-to-source voltage
Drain-to-gate voltage
BVDSS
BVDGS
±20V
Gate-to-source voltage
Product Marking
Operating and storage temperature
-55OC to +150OC
SiVN
0 1 0 9
YYWW
YY = Year Sealed
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Typical Thermal Resistance
TO-92
Package
θja
TO-92
132OC/W
Doc.# DSFP-VN0109
C081913
Supertex inc.
www.supertex.com
VN0109
Thermal Characteristics
ID
ID
Power Dissipation
†
Package
IDR
IDRM
@TC = 25OC
(continuous)†
(pulsed)
TO-92
350mA
2.0A
1.0W
350mA
2.0A
Notes:
†
ID (continuous) is limited by max rated Tj .
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym
BVDSS
VGS(th)
Parameter
Min
90
0.8
-
Typ
Max Units Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
-
-
V
V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID= 1.0mA
-
2.4
ΔVGS(th) Change in VGS(th) with temperature
-3.8
-5.5 mV/OC VGS = VDS, ID= 1.0mA
IGSS
Gate body leakage
-
-
-
100
1.0
nA
VGS = ± 20V, VDS = 0V
-
VGS = 0V, VDS = Max Rating
IDSS
Zero gate voltage drain current
µA
V
V
DS = 0.8 Max Rating,
GS = 0V, TA = 125°C
-
-
100
0.5
1.0
2.5
3.0
2.5
0.70
450
55
-
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5.0V, ID = 250mA
VGS = 10V, ID = 1.0A
ID(ON)
On-state drain current
A
2.0
-
-
5.0
3.0
1.0
-
RDS(ON) Static drain-to-source on-state resistance
Ω
-
ΔRDS(ON) Change in RDS(ON) with temperature
-
%/OC VGS = 10V, ID = 1.0A
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transductance
Input capacitance
300
mmho VDS = 25V, ID = 500mA
-
-
-
-
-
-
-
-
-
65
25
8.0
5.0
8.0
9.0
8.0
1.8
-
VGS = 0V,
VDS = 25V,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
20
pF
ns
5.0
3.0
5.0
6.0
5.0
1.2
400
VDD = 25V,
ID = 1.0A,
RGEN = 25Ω
Rise time
td(OFF)
tf
Turn-off delay time
Fall time
VSD
trr
Diode forward voltage drop
Reverse recovery time
V
VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 1.0A
ns
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
VDD
90%
INPUT
0V
Pulse
RL
10%
Generator
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tf
tr
VDD
OUTPUT
0V
INPUT
D.U.T.
10%
10%
90%
90%
Doc.# DSFP-VN0109
C081913
Supertex inc.
www.supertex.com
2
VN0109
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
5.0
4.0
3.0
2.0
1.0
0
1.1
1.0
0.9
VGS = 5.0V
VGS = 10V
0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
Tj (OC)
ID (amperes)
V(th) and RDS Variation with Temperature
Transfer Characteristics
1.6
2.5
1.9
VDS = 25V
1.6
TA = -55OC
1.4
2.0
1.5
1.0
0.5
0
RDS @ 10V, 1.0A
25OC
125OC
1.3
1.2
V(th) @ 1.0mA
RDS @ 5.0V, 0.25A
1.0
0.7
0.4
1.0
0.8
0.6
-50
0
50
100
150
0
2
4
6
8
10
Tj (OC)
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
100
10
f = 1.0MHz
VDS = 10V
8
6
4
2
0
75
40V
50
80 pF
CISS
25
COSS
CRSS
40 pF
0
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
VDS (volts)
QG (nanocoulombs)
Doc.# DSFP-VN0109
C081913
Supertex inc.
www.supertex.com
3
VN0109
Typical Performance Curves (cont.)
Output Characteristics
Saturation Characteristics
2.5
2.5
2.0
1.5
1.0
0.5
0
VGS = 10V
9.0V
VGS = 10V
9.0V
8.0V
2.0
1.5
1.0
0.5
0
8.0V
7.0V
7.0V
6.0V
6.0V
5.0V
5.0V
4.0V
3.0V
4.0V
3.0V
10
0
10
20
30
40
0
2.0
4.0
6.0
8.0
VDS (volts)
VDS (volts)
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
2.0
1.0
0
1.0
0.8
0.6
0.4
0.2
0
VDS = 25V
TA = -55OC
25OC
125OC
TO-92
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
TC (OC)
ID (amperes)
Thermal Response Characteristics
Maximum Rated Safe Operating Area
10
1.0
1.0
0.8
0.6
0.4
0.2
0
TO-92 (DC)
0.1
TO-92
PD = 1.0W
TC = 25OC
TC = 25OC
0.01
0.001
0.01
0.1
1.0
10
0.1
1.0
10
100
VDS (volts)
tP (seconds)
Doc.# DSFP-VN0109
C081913
Supertex inc.
www.supertex.com
4
VN0109
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
-
b
.014†
-
c
D
.175
-
E
.125
-
E1
.080
-
e
e1
.045
-
L
.500
-
MIN
NOM
MAX
.014†
-
.095
-
Dimensions
(inches)
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Doc.# DSFP-VN0109
C081913
5
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