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VN0650 [SUPERTEX]

N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
VN0650
型号： VN0650
厂家： Supertex, Inc    Supertex, Inc
描述：

N-Channel Enhancement-Mode Vertical DMOS FETs
N沟道增强型垂直DMOS场效应管
文件： 总4页 (文件大小：34K)
中文：  中文翻译
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VN0645  
VN0650  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-39  
TO-92  
—
Die†  
450V  
16Ω  
16Ω  
0.5A  
0.5A  
VN0645N2  
—
—
500V  
VN0650N3  
VN0650ND  
7
†
MIL visual screening available  
High Reliability Devices  
See pages 5-4 and 5-5 for MILITARY STANDARD Process  
Flows and Ordering Information.  
Advanced DMOS Technology  
The VN0650 is NOT recommended for new designs. Please  
use VN2450 instead.  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Features  
■ Free from secondary breakdown  
■ Low power drive requirement  
■ Ease of paralleling  
■ Low CISS and fast switching speeds  
■ Excellent thermal stability  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
■ Integral Source-Drain diode  
■ High input impedance and high gain  
■ Complementary N- and P-channel devices  
Applications  
■ Motor controls  
Package Options  
■ Converters  
■ Amplifiers  
■ Switches  
■ Power supply circuits  
■ Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
G
D
S
S G D  
TO-39  
Case: DRAIN  
BVDSS  
BVDGS  
TO-92  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
± 20V  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
7-175  
VN0645/VN0650  
Thermal Characteristics  
Package  
ID (continuous)*  
ID (pulsed)  
Power Dissipation  
θjc  
θja  
IDR*  
IDRM  
@ TC = 25°C  
°C/W  
°C/W  
TO-39  
TO-92  
0.4A  
0.2A  
1.5A  
1.0A  
6W  
1W  
21  
125  
170  
0.4A  
0.2A  
1.5A  
1.0A  
125  
* ID (continuous) is limited by max rated Tj.  
Electrical Characteristics (@ 25°C unless otherwise specified)  
Symbol  
Parameter  
Min  
500  
450  
2
Typ  
Max  
Unit  
Conditions  
Drain-to-Source  
Breakdown Voltage  
BVDSS  
VN0650  
VN0645  
V
VGS = 0V, ID = 2mA  
VGS(th)  
∆VGS(th)  
IGSS  
Gate Threshold Voltage  
4
-4.5  
100  
10  
V
mV/°C  
nA  
VGS = VDS , ID = 2mA  
Change in VGS(th) with Temperature  
Gate Body Leakage  
VGS = VDS , ID = 2mA  
VGS = ±20V, VDS = 0V  
VGS = 0V, VDS = Max Rating  
IDSS  
Zero Gate Voltage Drain Current  
µA  
1
mA  
VGS = 0V, VDS = 0.8 Max Rating  
TA = 125°C  
ID(ON)  
ON-State Drain Current  
0.8  
1.1  
12  
VGS = 5V, VDS = 25V  
VGS = 10V, VDS = 25V  
VGS = 5V, ID = 100mA  
VGS = 10V, ID = 400mA  
VGS = 10V, ID = 400mA  
VDS = 25V, ID = 400mA  
A
0.5  
RDS(ON)  
Static Drain-to-Source  
ON-State Resistance  
Ω
11  
16  
∆RDS(ON)  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Change in RDS(ON) with Temperature  
Forward Transconductance  
Input Capacitance  
0.75  
%/°C  
Ω
100  
m
120  
20  
130  
75  
20  
10  
10  
20  
10  
1.8  
VGS = 0V, VDS = 25V  
f = 1 MHz  
Common Source Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
pF  
ns  
10  
VDD = 25V,  
ID = 0.5A,  
Rise Time  
td(OFF)  
tf  
Turn-OFF Delay Time  
Fall Time  
R
GEN = 25Ω  
VSD  
trr  
Diode Forward Voltage Drop  
Reverse Recovery Time  
V
VGS = 0V, ISD = 0.4A  
VGS = 0V, ISD = 0.4A  
300  
ns  
Notes:  
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
VDD  
Switching Waveforms and Test Circuit  
RL  
10V  
90%  
PULSE  
GENERATOR  
INPUT  
OUTPUT  
10%  
0V  
Rgen  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
tr  
tF  
D.U.T.  
VDD  
0V  
INPUT  
10%  
10%  
OUTPUT  
90%  
90%  
7-176  
VN0645/VN0650  
Typical Performance Curves  
Output Characteristics  
Saturation Characteristics  
2.0  
1.0  
V
= 6V to 10V  
GS  
V
= 6V to 10V  
GS  
4V  
1.0  
0.5  
5V  
4V  
3V  
3V  
40  
0
0
0
0
1
10  
20  
30  
50  
0
2
4
6
8
10  
7
VDS (volts)  
VDS (volts)  
Transconductance vs. Drain Current  
Power Dissipation vs. Case Temperature  
0.3  
0.24  
0.18  
0.12  
0.06  
0
50  
40  
30  
20  
10  
0
V
= 25V  
DS  
T
T
T
= -55°C  
= 25°C  
= 150°C  
A
A
A
TO-39  
TO-92  
0.2  
0.4  
0.6  
0.8  
1.0  
0
25  
50  
75  
100  
125  
150  
ID (amperes)  
TC (°C)  
Maximum Rated Safe Operating Area  
Thermal Response Characteristics  
10  
1.0  
1.0  
0.8  
0.6  
0.4  
TO-39 (pulsed)  
TO-39  
TO-39 (DC)  
TO-92 (DC)  
PD = 6W  
TC = 25°C  
0.1  
0.2  
0
TO-92  
P
T
= 1W  
D
C
T
= 25°C  
= 25°C  
C
0.01  
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
VDS (volts)  
tp (seconds)  
7-177  
VN0645/VN0650  
Typical Performance Curves  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
30  
24  
18  
1.1  
V
= 10V  
GS  
V
= 5V  
GS  
1.0  
0.9  
12  
6
0
-50  
0
50  
100  
150  
0
-50  
0
0.3  
0.6  
0.9  
1.2  
1.5  
ID (amperes)  
Tj (°C)  
Transfer Characteristics  
V(th) and RDS Variation with Temperature  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
1.4  
1.2  
1.0  
0.8  
0.6  
R
@ 10V, 400mA  
DS  
V
= 25V  
DS  
25°C  
T
= -55°C  
A
150°C  
0.5  
V
@ 2mA  
(th)  
0
0
2
4
6
8
10  
0
50  
100  
150  
VGS (volts)  
Tj(°C)  
Capacitance vs. Drain-to-Source Voltage  
f = 1MHz  
Gate Drive Dynamic Characteristics  
200  
150  
100  
50  
10  
8
V
= 10V  
DS  
V
= 40V  
DS  
6
C
ISS  
179 pF  
4
C
2
OSS  
110 pF  
0.5  
C
RSS  
0
0
1.5  
0
10  
20  
30  
40  
1.0  
2.0  
2.5  
QG (nanocoulombs)  
VDS (volts)  
7-178  

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