VN0808 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | VN0808 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总2页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN0808
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
ID(ON)
BVDGS
(max)
(min)
TO-92
80V
4.0Ω
1.5A
VN0808L
Features
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
❏
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Complementary N- and P-channel devices
Applications
❏
❏
❏
❏
❏
❏
Motor controls
Package Option
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
S G D
BVDGS
TO-92
±30V
Operating and Storage Temperature
-55°C to +150°C
300°C
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN0808
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
0.3A
1.9A
1W
125
170
0.3A
1.9A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
Typ
Max
Unit
Conditions
80
V
ID = 10µA, VGS = 0V
VGS = VDS, ID = 1mA
VGS = ±15V, VDS = 0V
VGS = 0V, VDS = 80V
0.8
2.0
100
10
V
Gate Body Leakage
nA
µA
IDSS
Zero Gate Voltage Drain Current
500
VGS = 0V, VDS = 0.8 x Max Rating
TA = 125°C
ID(ON)
RDS(ON)
GFS
ON-State Drain Current
1.5
A
VGS = 10V, VDS = 10V
VGS = 10V, ID = 1A
VDS = 10V, ID = 0.5A
Static Drain-to-Source ON-State Resistance
Forward Transconductance
Input Capacitance
4.0
Ω
Ω
170
m
CISS
50
40
10
10
10
VGS = 0V, VDS = 25V
COSS
CRSS
t(ON)
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
pF
f = 1 MHz
VDD = 25V, ID = 1A
ns
V
RGEN = 25Ω
t(OFF)
VSD
Turn-OFF Time
Diode Forward Voltage Drop
0.85
ISD = 0.35A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
相关型号：
VN0808L-G
Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3
SUPERTEX
VN0808L-TA
Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN
VISHAY
VN0808L-TR1
TRANSISTOR 300 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, TO-92, 3 PIN, FET General Purpose Small Signal
VISHAY
VN0808LP001
Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0808LP003
Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0808LP004
Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0808LP005
Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0808LP006
Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0808LP007
Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0808LP015
Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
©2020 ICPDF网 联系我们和版权申明