VN2460N3-GP013 [SUPERTEX]

N-Channel Enhancement-Mode Vertical DMOS FET;
VN2460N3-GP013
型号: VN2460N3-GP013
厂家: Supertex, Inc    Supertex, Inc
描述:

N-Channel Enhancement-Mode Vertical DMOS FET

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中文:  中文翻译
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Supertex inc.  
VN2460  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral source-drain diode  
High input impedance and high gain  
General Description  
This enhancement-mode (normally-off) transistor utilizes  
a vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination  
produces a device with the power handling capabilities of  
bipolar transistors and with the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally induced secondary  
breakdown.  
Applications  
Motor controls  
Converters, amplifiers, and switches  
Power supply circuits  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
RDS(ON)  
ID(ON)  
Part Number  
Package Options  
Packing  
BVDSS/BVDGS  
(max)  
(min)  
VN2460N3-G  
TO-92  
1000/Bag  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
600V  
20Ω  
2500mA  
VN2460N3-G P002 TO-92  
VN2460N3-G P003 TO-92  
VN2460N3-G P005 TO-92  
VN2460N3-G P013 TO-92  
VN2460N3-G P014 TO-92  
Pin Configuration  
DRAIN  
VN2460N8-G  
TO-243AA (SOT-89) 2000/Reel  
DRAIN  
-G denotes a lead (Pb)-free / RoHS compliant package  
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92  
Taping Specifications and Winding Styles  
SOURCE  
DRAIN  
GATE  
SOURCE  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
GATE  
Absolute Maximum Ratings  
TO-92  
TO-243AA (SOT-89)  
Parameter  
Value  
Product Marking  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage temperature  
BVDSS  
BVDGS  
SiVN  
2 4 6 0  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
±20V  
-55OC to +150OC  
= “Green” Packaging  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Package may or may not include the following marks: Si or  
TO-92  
Typical Thermal Resistance  
W = Code for week sealed  
VN4FW  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-243AA (SOT-89)  
Package  
θja  
TO-92  
132OC/W  
133OC/W*  
TO-243AA (SOT-89)  
* Mounted on FR5 Board, 25mm x 25mm x 1.57mm  
Doc.# DSFP-VN2460  
B082013  
Supertex inc.  
www.supertex.com  
VN2460  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
Package  
IDR  
IDRM  
(continuous)†  
(pulsed)  
@TA = 25OC  
TO-92  
160mA  
200mA  
500mA  
600mA  
1.0W  
1.6W‡  
160mA  
200mA  
500mA  
600mA  
TO-243AA (SOT-89)  
Notes:  
† ID (continuous) is limited by max rated Tj .  
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.  
(T = 25°C unless otherwise specified)  
Electrical Characteristics  
A
Sym  
BVDSS  
VGS(th)  
Parameter  
Min  
Typ  
Max  
-
Units Conditions  
Drain-to-source breakdown voltage  
Gate threshold voltage  
600  
-
-
-
-
V
V
VGS = 0V, ID = 2.0mA  
VGS = VDS, ID = 2.0mA  
1.5  
4.0  
-5.5  
100  
ΔVGS(th) Change in VGS(th) with temperature  
-
-
mV/OC VGS = VDS, ID = 2.0mA  
IGSS  
Gate body leakage current  
nA  
VGS = ±20V, VDS = 0V  
VGS = 0V,  
VDS = Max Rating  
-
-
-
-
10  
µA  
IDSS  
Zero gate voltage drain current  
VDS = 0.8 Max Rating,  
VGS = 0V, TA = 125OC  
1.0  
mA  
A
ID(ON)  
On-state drain current  
0.25  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGS = 10V, VDS = 25V  
VGS = 4.5V, ID = 100mA  
-
-
25  
20  
1.7  
-
RDS(ON)  
Static drain-to-source on-state resistance  
Ω
VGS = 10V, ID = 100mA  
ΔRDS(ON) Change in RDS(ON) with temperature  
-
%/OC VGS = 10V, ID = 100mA  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
50  
-
mmho VDS = 25V, ID = 100mA  
150  
50  
25  
10  
10  
25  
20  
1.5  
VGS = 0V,  
VDS = 25V,  
f = 1.0MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
-
pF  
-
-
VDD = 25V,  
ID = 250mA,  
RGEN = 25Ω  
Rise time  
-
ns  
V
td(OFF)  
tf  
Turn-off delay time  
-
Fall time  
-
VSD  
Diode forward voltage drop  
-
VGS = 0V, ISD = 400mA  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
10V  
VDD  
90%  
INPUT  
0V  
Pulse  
RL  
10%  
Generator  
OUTPUT  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
RGEN  
tf  
tr  
VDD  
OUTPUT  
0V  
INPUT  
D.U.T.  
10%  
10%  
90%  
90%  
Doc.# DSFP-VN2460  
B082013  
Supertex inc.  
www.supertex.com  
2
VN2460  
Typical Performance Curves  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
1.2  
50  
40  
30  
20  
10  
0
VGS = 4.5V  
1.1  
1.0  
0.9  
0.8  
VGS = 10V  
0
0.2  
0.4  
0.6  
0.8  
1.0  
-50  
0
50  
100  
150  
Tj (OC)  
ID (amperes)  
V(th) and RDS Variation with Temperature  
Transfer Characteristics  
1.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
3.0  
VDS = 25V  
TA = -55OC  
1.4  
2.5  
25OC  
1.2  
1.0  
0.8  
0.6  
0.4  
2.0  
1.5  
1.0  
0.5  
0
VGS(th) @ 2.0mA  
125OC  
RDS(ON) @ 10V, 0.1A  
0
2.0  
4.0  
6.0  
8.0  
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tj (OC)  
VGS (volts)  
Gate Drive Dynamic Characteristics  
Capacitance vs. Drain-to-Source Voltage  
10  
300  
ID =0.5A  
f = 1MHz  
8.0  
6.0  
4.0  
2.0  
0
225  
VDS = 10V  
VDS = 40V  
150  
CISS  
75  
CRSS  
COSS  
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
10  
20  
30  
40  
QG (nanocoulombs)  
VDS (volts)  
Doc.# DSFP-VN2460  
B082013  
Supertex inc.  
www.supertex.com  
3
VN2460  
Typical Performance Curves (cont.)  
Output Characteristics  
Saturation Characteristics  
1.2  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VGS = 10V  
8V  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VGS = 10V  
8V  
6V  
5V  
6V  
5V  
4V  
4V  
3V  
3V  
10  
0
10  
20  
30  
40  
50  
0
2.0  
4.0  
6.0  
8.0  
VDS (volts)  
VDS (volts)  
Transconductance vs. Drain Current  
Power Dissipation vs. Temperature  
0.5  
0.4  
0.3  
0.2  
0.1  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0.6  
VDS = 25V  
SOT-89  
TA = -55OC  
25OC  
TO-92  
125OC  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
25  
50  
75  
100  
125  
150  
ID (amperes)  
TA (OC)  
Maximum Rated Safe Operating Area  
1.0 SOT-89 (pulsed)  
Thermal Response Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TO-92 (pulsed)  
SOT-89 (DC)  
SOT-89  
PD = 1.6W  
TC = 25OC  
0.1  
0.01  
TO-92 (DC)  
TO-92  
PD = 1W  
TC = 25OC  
TC = 25OC  
0.001  
1.0  
10  
100  
1000  
0.001  
0.01  
0.1  
1.0  
10  
VDS (volts)  
tp (seconds)  
Doc.# DSFP-VN2460  
B082013  
Supertex inc.  
www.supertex.com  
4
VN2460  
3-Lead TO-92 Package Outline (N3)  
D
A
Seating  
Plane  
1
2
3
L
c
b
e1  
e
Side View  
Front View  
E
E1  
1
3
2
Bottom View  
Symbol  
A
.170  
-
b
.014†  
-
c
D
.175  
-
E
.125  
-
E1  
.080  
-
e
e1  
.045  
-
L
.500  
-
MIN  
NOM  
MAX  
.014†  
-
.095  
-
Dimensions  
(inches)  
.210  
.022†  
.022†  
.205  
.165  
.105  
.105  
.055  
.610*  
JEDEC Registration TO-92.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc.#: DSPD-3TO92N3, Version E041009.  
Doc.# DSFP-VN2460  
B082013  
Supertex inc.  
www.supertex.com  
5
VN2460  
3-Lead TO-243AA (SOT-89) Package Outline (N8)  
D
D1  
C
H
E
E1  
1
2
3
L
b
b1  
A
e
e1  
Top View  
Side View  
Symbol  
A
1.40  
-
b
0.44  
-
b1  
0.36  
-
C
0.35  
-
D
D1  
1.62  
-
E
2.29  
-
E1  
2.00†  
-
e
e1  
H
3.94  
-
L
0.73†  
-
MIN  
NOM  
MAX  
4.40  
-
Dimensions  
(mm)  
1.50  
BSC  
3.00  
BSC  
1.60  
0.56  
0.48  
0.44  
4.60  
1.83  
2.60  
2.29  
4.25  
1.20  
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.  
This dimension differs from the JEDEC drawing  
Drawings not to scale.  
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
information go to http://www.supertex.com/packaging.html.)  
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)  
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
Tel: 408-222-8888  
www.supertex.com  
Doc.# DSFP-VN2460  
B082013  
6

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