VP0350ND [SUPERTEX]
Small Signal Field-Effect Transistor, 500V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | VP0350ND |
| 厂家： | 
Supertex, Inc |
| 描述： | Small Signal Field-Effect Transistor, 500V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VP0350
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
TO-220
BVDSS
/
RDS(ON)
ID(ON)
(min)
BVDGS
(max)
TO-3
Die†
-500V
7.5Ω
-1A
VP0350N1
VP0350N5
VP0350ND
†
MIL visual screening available
High Reliability Devices
Advanced DMOS Technology
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Package Options
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
S
G
G
D
TO-3
S
Absolute Maximum Ratings
Drain-to-Source Voltage
Case: DRAIN
TO-220
TAB: DRAIN
BVDSS
Drain-to-Gate Voltage
BVDGS
± 20V
Gate-to-Source Voltage
Operating and Storage Temperature
-55°C to +150°C
300°C
Soldering Temperature*
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
05/19/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP0350
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-3
-1.5A
-1.0A
-3.0A
-3.0A
100W
50W
1.25
2.5
30
40
-1.5A
-1.0A
-3.0A
-3.0A
TO-220
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
-500
-2.5
Typ
Max
Unit
Conditions
V
VGS= 0V, ID =-10mA
VGS = VDS, ID = -10mA
VGS = VDS, ID = -10mA
VGS = ±20V, VDS = 0V
-4.5
6.0
V
Change in VGS(th) with Temperature
Gate Body Leakage
4.8
mV/°C
nA
-100
-200
-2
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
-1.5
-3.0
6.0
5.5
0.7
0.45
720
110
20
VGS = -5V, VDS = -25V
A
-1.0
VGS = -10V, VDS = -25V
RDS(ON)
VGS = -5V, ID = -0.25A
VGS = -10V, ID = -0.25A
VGS = -10V, ID = -0.25A
VDS = -25V, ID = -0.5A
Static Drain-to-Source
ON-State Resistance
Ω
7.5
1.2
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
Ω
0.25
800
130
50
VGS = 0V, VDS = -25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
11
30
VDD = -25V
ID = -1A
Rise Time
11
30
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
70
100
30
RGEN = 10Ω
22
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
-1.0
550
-1.3
V
VGS = 0V, ISD = -0.25A
VGS = 0V, ISD = -0.25A
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
OUTPUT
0V
INPUT
90%
90%
RL
OUTPUT
VDD
10%
10%
VDD
2
VP0350
Typical Performance Curves
Output Characteristics
Saturation Characteristics
-5
-2.0
-1.6
-1.2
-0.8
-0.4
V
= -10V
-8V
V
= -10V
-7V
GS
GS
-4
-3
-2
-1
0
-6V
-5V
-8V
-6V
-5V
-4V
-4V
-40
0
0
-10
-20
-30
-50
0
-2
-4
-6
-8
-10
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0
100
80
60
40
20
0
TO-3
VDS = -25V
T
T
= -55°C
= 25°C
A
TO-220
A
T
= 150°C
A
0
-0.5
-1.0
-1.5
-2.0
-2.5
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
-10
1.0
0.8
0.6
0.4
0.2
0
TO-220
TO-220 (pulsed)
TO-3 (DC)
P
T
= 50W
D
C
= 25°C
-1
TO-220 (DC)
TO-3
PD = 100W
TC = 25°C
-0.1
-0.01
T
= 25°C
C
-1
-10
-100
-1000
0.001
0.01
0.1
1
10
VDS (volts)
tp (seconds)
3
VP0350
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.15
20
16
12
8
V
= -5V
V
= -10V
GS
GS
1.1
1.05
1.0
4
0.95
0.9
0
-50
0
50
100
150
0
-50
0
-1.0
-2.0
-3.0
-4.0
-5.0
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.2
1.1
1.0
0.9
0.8
0
2.0
1.0
0
-5.0
R
@ -10V, -0.25A
DS(ON)
V
= -25V
DS
-4.0
-3.0
-2.0
-1.0
V
@ -10mA
100
(th)
0
0
-2
-4
-6
-8
-10
0
50
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
800
600
400
200
0
-10
-8
-6
-4
-2
0
f = 1MHz
CISS
VDS = -10V
800 pF
VDS = -40V
COSS
CRSS
500 pF
0
-10
-20
-30
-40
2
4
6
8
10
QG (nanocoulombs)
VDS (volts)
05/19/03
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 222-8888 • FAX: (408) 222-4895
www.supertex.com
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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