VP0645N2 [SUPERTEX]

Small Signal Field-Effect Transistor, 0.25A I(D), 450V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39;


型号：	VP0645N2
厂家：	Supertex, Inc
描述：	Small Signal Field-Effect Transistor, 0.25A I(D), 450V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 输入元件开关晶体管
文件：	总4页 (文件大小：29K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VP0645

VP0650

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

I_D(ON)

BV_DSS

R_DS(ON)

BV_DGS

-450V

-500V

(max)

(min)

-0.2A

TO-39

VP0645N2

—

TO-92

TO-220

Die^†

—

30Ω

—

VP0650N3

VP0650N5

VP0650ND

†

MIL visual screening available

High Reliability Devices

Advanced DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Features

■ Free from secondary breakdown

■ Low power drive requirement

■ Ease of paralleling

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

■ Low C_ISSand fast switching speeds

■ Excellent thermal stability

■ Integral Source-Drain diode

■ High input impedance and high gain

■ Complementary N- and P-channel devices

Package Options

Applications

■ Motor controls

■ Converters

■ Amplifiers

■ Switches

■ Power supply circuits

■ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

TO-220

TAB: DRAIN

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

Drain-to-Gate Voltage

BV_DGS

± 20V

S G D

TO-39

Case: DRAIN

TO-92

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

7-245

VP0645/VP0650

Thermal Characteristics

Package

I_D(continuous)*

I_D(pulsed)

Power Dissipation

θ_jc

θ_ja

I_DR*

I_DRM

@ T_C= 25°C

°C/W

TO-92

TO-39

TO-220

-0.1A

-0.25A

-0.3A

-0.5A

125

170

125

-0.1A

-0.25A

-0.3A

-0.5A

45W

2.7

* I_D(continuous) is limited by max rated T_j.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol

Parameter

Min

-500

-450

-2

Typ

Max

Unit

Conditions

BV_DSS

VP0650

VP0645

Drain-to-Source

V_GS= 0V, I_D= -2mA

Breakdown Voltage

V_GS(th)

∆V_GS(th)

I_GSS

Gate Threshold Voltage

-4

-4.8

-100

-10

mV/°C

V_GS= V_DS, I_D= -2mA

Change in V_GS(th)with Temperature

Gate Body Leakage

V_GS= V_DS, I_D= -2mA

V_GS= ±20V, V_DS= 0V

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero Gate Voltage Drain Current

µA

-1

V_GS= 0V, V_DS= 0.8 Max Rating

T_A= 125°C

I_D(ON)

ON-State Drain Current

-200

-700

V_GS= -5V, V_DS= -25V

V_GS= -10V, V_DS= -25V

V_GS= -5V, I_D= -100mA

V_GS= -10V, I_D= -100mA

V_DS= -25V, I_D= -100mA

-200

Static Drain-to-Source

ON-State Resistance

R_DS(ON)

Ω

∆R_DS(ON)

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Change in R_DS(ON)with Temperature

Forward Transconductance

Input Capacitance

0.75

%/°C

Ω

125

160

V_GS= 0V, V_DS=- 25V

f = 1 MHz

Common Source Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

V_DD= -25V

Rise Time

I_D= -200mA

t_d(OFF)

t_f

Turn-OFF Delay Time

Fall Time

_GEN= 25Ω

V_SD

t_rr

Diode Forward Voltage Drop

Reverse Recovery Time

-1.8

V_GS= 0V, I_SD= -50mA

300

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

10%

PULSE

GENERATOR

INPUT

90%

-10V

R_gen

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

t_r

t_F

D.U.T.

OUTPUT

INPUT

90%

R_L

OUTPUT

V_DD

10%

V_DD

7-246

VP0645/VP0650

Typical Performance Curves

Output Characteristics

Saturation Characteristics

-0.5

-0.4

-0.3

-0.2

-0.1

-1.0

= -10V

-0.8

= -10V

-0.6

-0.4

-0.2

-6V

-8V

-6V

-4V

-40

-10

-20

-30

-50

-2

-4

-6

-8

-10

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Case Temperature

0.5

0.4

0.3

0.2

0.1

TO-220

= -25V

V_D_D_S_S= -25V

T = -55°C

= 25°C

= 125°C

TO-39

TO-92

-0.1

-0.2

-0.3

-0.4

-0.5

100

125

150

I_D(amperes)

T_C(°C)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

TO-220

-1.0

-0.1

1.0

0.8

0.6

0.4

TO-39 (pulsed)

TO-220 (DC)

TO-39 (DC)

= 45W

= 25°C

TO-39

TO-92 (DC)

= 6W

= 25°C

-0.01

-0.001

0.2

TO-92

= 1W

= 25°C

-1

-10

-100

-1000

0.001

0.01

0.1

1.0

V_DS(volts)

t_p(seconds)

7-247

VP0645/VP0650

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.1

1.0

0.9

= -5V

= -10V

-50

100

150

-50

-0.2

-0.4

-0.6

-0.8

-1.0

_D(amperes)

T_j(°C)

Transfer Characteristics

V_(th)and R_DSVariation with Temperature

2.0

1.0

-1.0

-0.8

-0.6

-0.4

-0.2

= -25V

@ -10V, -0.1A

1.2

1.1

1.0

0.9

0.8

DS(ON)

= -55°C

= 25°C

= 150°C

@ -2mA

(th)

-2

-4

-6

-8

-10

100

150

V_GS(volts)

T_j(°C)

Capacitance vs. Drain-to-Source Voltage

f = 1MHz

Gate Drive Dynamic Characteristics

200

150

100

-10

-8

-6

-4

-2

_DS= -10V

V_DS= -40V

250 pF

C_ISS

C_OSS

90 pF

C_RSS

-10

-20

-30

-40

0.5

1.0

1.5

2.0

2.5

Q_G(nanocoulombs)

V_DS(volts)

7-248