VP2450N8 [SUPERTEX]
P-Channel Enhancement-Mode Vertical DMOS FETs; P沟道增强型垂直DMOS场效应管
| 型号： | VP2450N8 |
| 厂家： | 
Supertex, Inc |
| 描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VP2450
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
ID(ON)
BVDSS
/
RDS(ON)
BVDGS
(max)
(min)
TO-92
TO-243AA*
Die
-500V
30Ω
-0.2A
VP2450N3
VP2450N8
VP2450ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Product marking for TO-243AA:
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
VP4E❏
Where ❏ = 2-week alpha date code
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
Advanced DMOS Technology
❏ Integral Source-Drain diode
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
Package Options
displays, bipolar transistors, etc.)
D
Absolute Maximum Ratings
Drain-to-Source Voltage
G
D
S
BVDSS
Drain-to-Gate Voltage
BVDGS
± 20V
TO-243AA
(SOT-89)
S G D
Gate-to-Source Voltage
TO-92
Operating and Storage Temperature
-55°C to +150°C
300°C
Soldering Temperature*
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP2450
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
-0.1A
-0.3A
1W
125
15
170
78
-0.1A
-0.3A
TO-243AA
-0.16A
-0.80A
1.6W†
-0.16A
-0.80A
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate.
D
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
-500
-1.5
Typ
Max
Unit
Conditions
BVDSS
Drain-to-Source
V
VGS = 0V, ID = -250µA
Breakdown Voltage
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
-3.5
-4.8
-100
-10
V
mV/°C
nA
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
-1
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
-75
VGS = -4.5V, VDS = -15V
mA
-200
V
GS = -10V, VDS = -15V
VGS = -4.5V, ID = -50mA
GS = -10V, ID = -100mA
Static Drain-to-Source
ON-State Resistance
RDS(ON)
35
30
Ω
V
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
VGS = -10V, ID = -100mA
VDS = -15V, ID = -100mA
Ω
150
320
m
190
75
VGS = 0V, VDS =- 25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
20
10
VDD = -25V
ID = -200mA
RGEN = 25Ω
Rise Time
25
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
45
25
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
-1.8
V
VGS = 0V, ISD = -100mA
VGS = 0V, ISD = -100mA
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
OUTPUT
0V
INPUT
90%
90%
RL
OUTPUT
VDD
10%
10%
VDD
2
VP2450
Typical Performance Curves
°
°
3
VP2450
Typical Performance Curves
°
°
°
°
°
07/08/02
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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