SPN2038 [SYNC-POWER]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | SPN2038 |
| 厂家： | 
SYNC POWER CROP. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总7页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN2038
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
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Power Management in Note book
The SPN2038 is the N-Channel logic enhancement mode
power field effect transistor which is produced with high
cell density DMOS trench technology. The SPN2038 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
Powered System
DC/DC Converter
Load Switch
FEATURES
PIN CONFIGURATION
TO-252
©
©
©
20V/14A, RDS(ON)= 16mΩ@VGS=4.5V
20V/7A,RDS(ON)= 22mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
©
Exceptional on-resistance and maximum DC
current capability
PART MARKING
2012/09/17 Ver.2
Page 1
SPN2038
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
Gate
1
2
3
G
S
Source
Drain
D
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN2038T252RGB
TO-252
SPN2038
※ SPN2038T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
Gate –Source Voltage
V
DSS
GSS
20
V
V
±16
V
A
T
C
C
=25℃
28
18
Continuous Drain Current
I
D
T
=100℃
Pulsed Drain Current
Power Dissipation
I
DM
70
25
A
W
℃
T
C
=25℃
P
D
Operating Junction Temperature
T
J
-55/150
Storage Temperature Range
T
STG
θJC
-55/150
5
℃
Thermal Resistance-Junction to Case
R
℃/W
2012/09/17 Ver.2
Page 2
SPN2038
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T =25℃ Unless otherwise noted)
A
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
(BR)DSS
GS(th)
V
V
V
GS=0V,I
D
=250uA
20
V
V
DS=VGS,I
D=250uA
0.5
1.2
Gate Leakage Current
IGSS
DS=0V,VGS=±16V
DS=16V,VGS=0V
DS=16V,VGS=0V
±100
1
nA
uA
V
V
Zero Gate Voltage Drain Current
IDSS
5
T
J
=55℃
On-State Drain Current
ID(on)
V
DS≥5V,VGS =4.5V
28
A
V
V
GS= 4.5V,I
GS=2.5V,I
DS=5V,I =14A
D
=14A
0.016
0.022
0.02
0.028
Drain-Source On-Resistance
R
DS(on)
Ω
D=7A
Forward Transconductance
Diode Forward Voltage
gfs
V
D
30
S
V
SD
IS
=1A,VGS =0V
1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
9.8
2.1
3
V
DS=15V, VGS=4.5V
= 14A
nC
pF
Q
gs
ID
Q
gd
iss
oss
rss
d(on)
C
772
83
79
4
V
DS=15, VGS=0V
C
f=1MHz
C
t
Turn-On Time
Turn-Off Time
t
r
12.5
20
8
V
V
DD=10V, ID≡14A,
nS
GS=4.5V, RG=3.3Ω
t
d(off)
t
f
2012/09/17 Ver.2
Page 3
SPN2038
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Fig. 1 Typical Output Characteristics
Fig. 2 On-Resistance vs Gate Voltage
Fig. 3 Forward Characteristics
Fig. 4 Total Gate Charge
Fig. 5 Vgs vs Temperature
Fig. 6 Rdson vs Temperature
2012/09/17 Ver.2
Page 4
SPN2038
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Fig. 7 Capacitance vs Vds
Fig. 8 Safe Operation Region
Fig. 9 Maximum Transient Thermal Impedance
Fig. 10 Switching Time Waveform
Fig. 11 Gate Charge Waveform
2012/09/17 Ver.2
Page 5
SPN2038
N-Channel Enhancement Mode MOSFET
TO-252 PACKAGE OUTLINE
2012/09/17 Ver.2
Page 6
SPN2038
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2012 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2012/09/17 Ver.2
Page 7
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