SPN75T04T220FTGB [SYNC-POWER]

N-Channel Enhancement Mode MOSFET;


型号：	SPN75T04T220FTGB
厂家：	SYNC POWER CROP.
描述：	N-Channel Enhancement Mode MOSFET
文件：	总7页 (文件大小：474K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SPN75T04

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS



DC/DC Converter

Load Switch

SMPS Secondary Side Synchronous Rectifier

Motor Control

Power Tool

The SPN75T04 is the N-Channel logic enhancement

mode power field effect transistor which is produced

using super high cell density DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance. These devices are

particularly suitable for synchronous rectifier application,

Motor control power management and other Power Tool

circuits. It has been optimized for low gate charge, low

RDS(ON) and fast switching speed.

FEATURES

PIN CONFIGURATION

TO-220F TO-251



45V/75A,RDS(ON)=9.5mΩ@VGS=10V

45V/75A,RDS(ON)=14mΩ@VGS=4.5V

Super high density cell design for extremely low

RDS (ON)

TO-252

PPAK5x6



Exceptional on-resistance and maximum DC

current capability

TO-220F-3L/TO-251S-3L/TO-252-2L/

PPAK5x6-8L package design

PART MARKING

2020/04/30 Ver 4

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SPN75T04

N-Channel Enhancement Mode MOSFET

PIN DESCRIPTION (T0-220F-3L/TO-252-2L/TO-251S-3L)

Pin Symbol

Description

Gate

Drain

Source

PIN DESCRIPTION (PPAK5x6-8L)

Symbol

Description

Source

Gate

Drain

ORDERING INFORMATION

Part Number

Package

Part Marking

SPN75T04

SPN75T04T220FTGB

SPN75T04ST251TGB

SPN75T04T252RGB

SPN75T04DN8RGB

TO-220F-3L

TO-251S-3L

TO-252-2L

PPAK5x6-8L

※ SPN75T04T220FTGB : Tube ; Pb – Free ; Halogen – Free

※ SPN75T04ST251TGB : Tube ; Pb – Free ; Halogen – Free

※ SPN75T04T252RGB : Tape&Reel ; Pb – Free ; Halogen – Free

※ SPN75T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free

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SPN75T04

N-Channel Enhancement Mode MOSFET

ABSOULTE MAXIMUM RATINGS

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

Gate –Source Voltage

VGSS

±20

TC=25℃

Continuous Drain Current

(TO-220F/TO-251/TO-252)

TC=100℃

TC=25℃

Continuous Drain Current

(PPAK5x6)

TC=100℃

Pulsed Drain Current

IDM

280

Power Dissipation @ TC=25℃

TO-220F-3L/TO-252-2L/TO-251S-3L

PPAK5x6-8L

Avalanche Energy with Single Pulse

( TC=25℃, L = 0.4mH. )

EAS

℃

Operating Junction Temperature

-55/150

℃

Storage Temperature Range

TSTG

RθJC

-55/150

1.2

℃/W

Thermal Resistance-Junction to Case (TO-220F-3L)

Thermal Resistance-Junction to Case (TO-252-2L/TO-251S-3L)

Thermal Resistance-Junction to Case (PPAK5x6-8L)

1.35

1.5

Note :

The maximum current rating is package limited at 78A for TO-220F-3L

The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L

The maximum current rating is package limited at 80A for PPAK5x6-8L

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SPN75T04

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min. Typ

Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate Leakage Current

V(BR)DSS VGS=0V,ID=250uA

VGS(th) VDS=VGS,ID=250uA

1.0

1.55

2.2

IGSS

VDS=0V,VGS=±20V

±100 nA

VDS=36V,VGS=0V,TJ=25°C

VDS=36V,VGS=0V,TJ=100°C

Zero Gate Voltage Drain Current

Drain-Source On-Resistance

IDSS

100

VGS=10V,ID=15A

VGS=4.5V,ID=8A

7.5

9.5

mΩ

RDS(on)

Forward Transconductance

Gate Resistance

gfs

VDS=5V,ID=10A

VGS=0V,VDS=Open,f=1MHz

IS=20A,VGS=0V

1.5

0.9

Diode Forward Voltage

VSD

1.2

Dynamic

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate-Source Charge

14.5

VDS=20V, VGS=10V

ID=10A

Qgs

Qgd

Ciss

Coss

Crss

td(on)

Gate-Drain Charge

2.5

942

309

Input Capacitance

VDS=20V, VGS=0V

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

VDD=20V, ID=10A,VGS=10V

RG=10Ω

td(off)

Turn-Off Time

Gate resistance

VGS=0V,VDS=0V, f=1MHz

1.5

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SPN75T04

N-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

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SPN75T04

N-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

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SPN75T04

N-Channel Enhancement Mode MOSFET

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of

use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is

granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this

publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC

Power Corporation products are not authorized for use as critical components in life support devices or systems without express

written approval of SYNC Power Corporation.

SYNC Power Corporation

7F-2, No.3-1, Park Street

NanKang District (NKSP), Taipei, Taiwan 115

Phone: 886-2-2655-8178

Fax: 886-2-2655-8468

2020/04/30 Ver 4

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