SPN80N10T220TGB [SYNC-POWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SPN80N10T220TGB |
| 厂家： | 
SYNC POWER CROP. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总7页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN80N10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
AC/DC Synchronous Rectifier
The SPN80N10 is the N-Channel enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN80N10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
Load Switch
UPS
Motor Control
Power Tool
FEATURES
PIN CONFIGURATION
TO-220 TO-220F TO-252-2L TO-262-3L PPAK5x6-8L
100V/84A, RDS(ON)=8.8mΩ@VGS=10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-220-3L/TO-220F-3L/TO-252-2L /TO-262-3L/
PPAK5x6-8L package design
PART MARKING
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SPN80N10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
Gate
1
2
3
G
D
S
Drain
Source
PPAK5x6 PIN DESCRIPTION
Pin
Symbol
Description
Source
Source
Source
Gate
1
S
S
2
3
4
5
6
7
8
S
G
D
D
D
D
Drain
Drain
Drain
Drain
ORDERINGINFORMATION
Part Number
Package
Part Marking
SPN80N10
SPN80N10
SPN80N10
SPN80N10
SPN80N10
SPN80N10T220TGB
SPN80N10T220FTGB
SPN80N10T252RGB
SPN80N10T263TGB
SPN80N10DN8RGB
TO-220-3L
TO-220F-3L
TO-252-2L
TO-262-3L
PPAK5x6-8L
※ SPN80N10T220TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN80N10T220FTGB : Tube ; Pb – Free ; Halogen – Free
※ SPN80N10T252RGB : Tape&Reel ; Pb – Free ; Halogen - Free
※ SPN80N10T263TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN80N10DN8RGB : Tape&Reel ; Pb – Free ; Halogen – Free
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SPN80N10
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
V
Drain-SourceVoltage
VDSS
100
V
A
Gate –Source Voltage
VGSS
ID
±20
TC=25℃
TC=100℃
TC=25℃
TC=100℃
84
60
74
47
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
(PPAK5x6)
ID
A
A
Pulsed Drain Current
IDM
EAS
330
306
mJ
Avalanche Energy, Single Pulse, L=0.5mH , TC=25℃
Power Dissipation@ TC=25℃ (TO-262)
Power Dissipation@ TC=25℃ (TO-220)
Power Dissipation@ TC=25℃ (TO-220F/TO-252)
Power Dissipation@ TC=25℃ (PPAK5x6)
Operating Junction Temperature
125
104
W
PD
TJ
93
83
-55/150
℃
℃
Storage Temperature Range
TSTG
RθJC
RθJC
RθJC
-55/150
1.2
℃/W
℃/W
℃/W
Thermal Resistance-Junction to Case (TO-220/TO-220F/TO-262)
Thermal Resistance-Junction to Case (TO-252)
Thermal Resistance-Junction to Case (PPAK5x6)
Note :
1.35
1.5
The maximum current rating is package limited at 120A for TO-263-2L and TO-220-3L
The maximum current rating is package limited at 78A for TO-220F-3L
The maximum current rating is package limited at 70A for TO-252-2L
The maximum current rating is package limited at 80A for PPAK5x6-8L
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SPN80N10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
100
2.0
V
Gate Threshold Voltage
Gate Leakage Current
4.0
IGSS
VDS=0V,VGS=±20V
DS=80V,VGS=0V
TJ=25℃
±100
nA
uA
V
1
Zero Gate Voltage Drain Current
IDSS
V
DS=80V,VGS=0V
100
8.8
TJ=100℃
Drain-SourceOn-Resistance
RDS(on) VGS=10V,ID=20A
mΩ
S
7.6
38
ForwardTransconductance
Gate Resistance
gfs
RG
VDS=5V,ID=20A
VGS=0V,VDS=Open,
f=1MHz
1.4
0.9
Ω
Diode Forward Voltage
VSD
IS=20A,VGS=0V
1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
25
6
V
DS=50V,VGS=10V
nC
pF
Qgs
ID=20A
Gate-Drain Charge
Input Capacitance
Qgd
Ciss
8
1576
350
7
VDS=50V,VGS=0V
f=1MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
td(on)
7
Turn-On Time
Turn-Off Time
VDD=50V,RL=1Ω
tr
td(off)
tf
4
19
3
I
D=20A,VGS=10V
nS
RG=10Ω
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SPN80N10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN80N10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN80N10
N-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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