SPN90T06T220TGB [SYNC-POWER]

N-Channel Enhancement Mode MOSFET;


型号：	SPN90T06T220TGB
厂家：	SYNC POWER CROP.
描述：	N-Channel Enhancement Mode MOSFET
文件：	总7页 (文件大小：507K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SPN90T06

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

 DC/DC Converter

 Load Switch

 SMPS Secondary Side Synchronous Rectifier

 Motor Control

 Power Tool

The SPN90T06 is the N-Channel enhancement mode

power field effect transistors are produced using high

cell density, DMOS trench technology. This high

density process is especially tailored to minimize

on-state resistance. These devices are particularly

suited for low voltage application, notebook computer

power management and other battery powered circuits

where high-side switching is required.

FEATURES

PIN CONFIGURATION (PPAK5x6-8L)

TO-220 TO-220F

TO-252

PPAK5x6

 60V/90A,RDS(ON)=5.3mΩ@VGS=10V

 Super high density cell design for extremely low

RDS (ON)

 Exceptional on-resistance and maximum DC current

capability

 TO-220-3L/TO-220F-3L/TO-252-2L/ PPAK5x6-8L

package design

PART MARKING

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SPN90T06

N-Channel Enhancement Mode MOSFET

PIN DESCRIPTION

Symbol

Description

Gate

Drain

Source

PIN DESCRIPTION (PPAK5x6-8L)

Symbol

Description

Source

Gate

Drain

ORDERING INFORMATION

Part Number

Package

TO-220-3L

TO-220F-3L

TO-252-2L

PPAK5x6-8L

Part Marking

SPN90T06

SPN90T06T220TGB

SPN90T06T220FTGB

SPN90T06T252RGB

SPN90T06DN8RGB

SPN90T06

※ SPN90T06T220TGB : Tube ; Pb – Free ; Halogen – Free

※ SPN90T06T220FTGB : Tube ; Pb – Free ; Halogen – Free

※ SPN90T06T252RGB : Tape&Reel ; Pb – Free ; Halogen - Free

※ SPN90T06DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free

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SPN90T06

N-Channel Enhancement Mode MOSFET

ABSOULTE MAXIMUM RATINGS

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

Gate –Source Voltage

VGSS

±20

TC=25℃

Continuous Drain Current(Silicon Limited)

TC=100℃

Continuous Drain Current(Package Limited) TC=25℃

Pulsed Drain Current

IDM

250

Avalanche Energy with Single Pulse

( TC=25℃, L=0.4mH. )

EAS

Power Dissipation@ Tc=25℃

TO-220

104

TO-252/TO-220F

PPAK5x6

Power Dissipation@ Tc=25℃

Operating Junction Temperature

Storage Temperature Range

-55/150

℃

TSTG

RθJC

-55/150

1.2

℃

℃/W

Thermal Resistance-Junction to Case (TO-220/TO-220F)

Thermal Resistance-Junction to Case (TO-251S/TO-252)

Thermal Resistance-Junction to Case (PPAK5x6)

1.35

1.5

Note :

The maximum current rating is package limited at 120A for TO-220-3L

The maximum current rating is package limited at 78A for TO-220F-3L

The maximum current rating is package limited at 70A for TO-252-2L

The maximum current rating is package limited at 80A for PPAK5x6-8L

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SPN90T06

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate Leakage Current

V(BR)DSS VGS=0V,ID=250uA

VGS(th) VDS=VGS,ID=250uA

2.0

4.0

±100

IGSS

VDS=0V,VGS=±20

VDS=48V,VGS=0V

Zero Gate Voltage Drain Current

IDSS

VDS=48V,VGS=0V

TJ=100℃

100

Gate Resistance

VGS=0V,VDS Open, f=1MHz

1.9

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

RDS(on) VGS=10V,ID=15A

4.1

5.3

1.2

mΩ

gfs

VDS=5V,ID=20A

IS=20A,VGS =0V

VSD

0.9

Dynamic

Total Gate Charge

Qgs

Qgd

Ciss

Coss

Crss

td(on)

VDS=30V,VGS=10V

ID=20A

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

2207

660

VDS=30V,VGS=0V

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

VDD=30V, ID=20A,VGS=10V

RG=10Ω

td(off)

Turn-Off Time

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SPN90T06

N-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

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SPN90T06

N-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

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SPN90T06

N-Channel Enhancement Mode MOSFET

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the

penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.

No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions

mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information

previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support

devices or systems without express written approval of SYNC Power Corporation.

SYNC Power Corporation

7F-2, No.3-1, Park Street

NanKang District (NKSP), Taipei, Taiwan 115

Phone: 886-2-2655-8178

Fax: 886-2-2655-8468

2020/04/30 Ver 3

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