首页 |元器件品牌

SPN9507 [SYNC-POWER]

N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
SPN9507
型号： SPN9507
厂家： SYNC POWER CROP.    SYNC POWER CROP.
描述：

N-Channel Enhancement Mode MOSFET
N沟道增强型MOSFET
文件： 总9页 (文件大小：233K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SPN9507  
N-Channel Enhancement Mode MOSFET  
28DESCRIPTION  
APPLICATIONS  
z
z
z
DC/DC Converter  
Load Switch  
SMPS Secondary Side Synchronous Rectifier  
The SPN9507 is the N-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application , notebook computer power management and  
other battery powered circuits where high-side  
switching .  
FEATURES  
PIN CONFIGURATION( TO-220-3L )  
‹
‹
75V/60A,RDS(ON)= 5.0mΩ@VGS= 10V  
Super high density cell design for extremely low  
RDS (ON)  
‹
‹
Exceptional on-resistance and maximum DC  
current capability  
TO-220-3L package design  
PART MARKING  
2009/06/20 Ver.1  
Page 1  
SPN9507  
N-Channel Enhancement Mode MOSFET  
PIN DESCRIPTION  
Pin  
Symbol  
Description  
1
2
3
G
D
S
Gate  
Drain  
Source  
ORDERING INFORMATION  
Part Number  
Package  
Part Marking  
SPN9507T220TGB  
TO-220-3L  
SPN9507  
※ SPN9507T220TGB: Tube ; Pb – Free; Halogen – Free  
ABSOULTE MAXIMUM RATINGS  
(TA=25℃ Unless otherwise noted)  
Parameter  
Symbol  
Typical  
Unit  
V
Drain-Source Voltage  
VDSS  
75  
Gate –Source Voltage  
VGSS  
ID  
±20  
V
TA=25℃  
Continuous Drain Current(TJ=150℃)  
TA=70℃  
80  
70  
A
A
Pulsed Drain Current  
IDM  
PD  
240  
TA=25℃  
300  
Power Dissipation  
W
TA=70℃  
3.38  
Avalanche Energy with Single Pulse  
( Tj=25℃, L = 0.12mH , IAS = 80A , VDD = 60V. )  
EAS  
380  
mJ  
Operating Junction Temperature  
TJ  
-55/150  
℃
Storage Temperature Range  
TSTG  
-55/150  
2
℃
Thermal Resistance-Junction to Ambient  
RθJA  
℃/W  
2009/06/20 Ver.1  
Page 2  
SPN9507  
N-Channel Enhancement Mode MOSFET  
ELECTRICAL CHARACTERISTICS  
(TA=25℃ Unless otherwise noted)  
Parameter  
Static  
Symbol  
Conditions  
Min.  
Typ  
Max. Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V(BR)DSS VGS=0V,ID=250uA  
VGS(th) VDS=VGS,ID=250uA  
75  
V
2.0  
4.0  
Gate Leakage Current  
IGSS  
VDS=0V,VGS=±20V  
VDS=75V,VGS=0V  
VDS=60V,VGS=0V  
TJ = 150 °C  
±100  
10  
nA  
uA  
Zero Gate Voltage Drain Current  
IDSS  
250  
5.0  
Drain-Source On-Resistance  
RDS(on) VGS= 10V,ID=60A  
mΩ  
Forward Transconductance  
Diode Forward Voltage  
gfs  
VDS=10V,ID=60A  
IS=60A,VGS =0V  
57  
S
VSD  
1.3  
V
Dynamic  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
85  
25  
135  
VDS=40V,VGS=10V  
ID= 80A  
nC  
pF  
36  
4290  
985  
390  
22  
6870  
VDS=25V,VGS=0V  
f=1MHz  
Turn-On Time  
Turn-Off Time  
VDD=40V,RL=0.5Ω  
ID≡80A,VGEN=10V  
RG=3.3Ω  
160  
38  
nS  
td(off)  
tf  
165  
2009/06/20 Ver.1  
Page 3  
SPN9507  
N-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2009/06/20 Ver.1  
Page 4  
SPN9507  
N-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2009/06/20 Ver.1  
Page 5  
SPN9507  
N-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2009/06/20 Ver.1  
Page 6  
SPN9507  
N-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2009/06/20 Ver.1  
Page 7  
SPN9507  
N-Channel Enhancement Mode MOSFET  
TO-220-3L PACKAGE OUTLINE  
2009/06/20 Ver.1  
Page 8  
SPN9507  
N-Channel Enhancement Mode MOSFET  
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the  
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.  
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions  
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information  
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support  
devices or systems without express written approval of SYNC Power Corporation.  
©The SYNC Power logo is a registered trademark of SYNC Power Corporation  
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved  
SYNC Power Corporation  
9F-5, No.3-2, Park Street  
NanKang District (NKSP), Taipei, Taiwan 115  
Phone: 886-2-2655-8178  
Fax: 886-2-2655-8468  
©http://www.syncpower.com  
2009/06/20 Ver.1  
Page 9  

相关型号：

SPN9507T220TGB

 N-Channel Enhancement Mode MOSFET
SYNC-POWER

SPN9518

 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM-11, 4 PIN
APITECH

SPN9522

 Wide Band Low Power Amplifier, 5MHz Min, 1500MHz Max, SM-11, 4 PIN
APITECH

SPN9524

 Wide Band Low Power Amplifier, 10MHz Min, 1500MHz Max, SM-11, 4 PIN
APITECH

SPN9529

 Wide Band Low Power Amplifier, 10MHz Min, 1500MHz Max, SM-11, 4 PIN
APITECH

SPN9566

 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM-11, 4 PIN
APITECH

SPN9666

 Wide Band Low Power Amplifier, 10MHz Min, 1000MHz Max, SM-11, 4 PIN
APITECH

SPN9701

 Wide Band Low Power Amplifier, 200MHz Min, 2000MHz Max, SM-11, 4 PIN
APITECH

SPN9702

 Wide Band Low Power Amplifier, 500MHz Min, 1500MHz Max, SM-11, 4 PIN
APITECH

SPN9704

 Wide Band Low Power Amplifier, 100MHz Min, 2500MHz Max,
APITECH

SPN9705

 Wide Band Medium Power Amplifier, 225MHz Min, 400MHz Max, 1 Func, SM-11, 4 PIN
APITECH

SPN9713

 Wide Band Low Power Amplifier, 500MHz Min, 2000MHz Max, SM-11, 4 PIN
APITECH
©2020 ICPDF网 联系我们和版权申明