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SPP2095 [SYNC-POWER]

P-Channel Enhancement Mode MOSFET; P沟道增强型MOSFET
SPP2095
型号： SPP2095
厂家： SYNC POWER CROP.    SYNC POWER CROP.
描述：

P-Channel Enhancement Mode MOSFET
P沟道增强型MOSFET
文件： 总8页 (文件大小：200K)
中文：  中文翻译
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SPP2095  
P-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
z
z
z
Power Management in Desktop Computer  
DC/DC Converter  
LCD Display inverter  
The SPP2095 is the P-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance. These devices are  
particularly suited for low voltage application, such as  
DC/DC converter and Desktop computer power  
management.  
The package is universally preferred for commercial  
industrial surface mount applications  
FEATURES  
PIN CONFIGURATION ( TO-252-2L )  
‹
‹
‹
‹
-20V/-6.0A,RDS(ON)= 65mΩ@VGS=-4.5V  
-20V/-3.6A,RDS(ON)= 850mΩ@VGS=-2.5V  
-20V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V  
Super high density cell design for extremely low  
RDS (ON)  
‹
‹
Exceptional on-resistance and maximum DC  
current capability  
TO-252-2L package design  
PART MARKING  
2006/03/16 Ver.2  
Page 1  
SPP2095  
P-Channel Enhancement Mode MOSFET  
PIN DESCRIPTION  
Pin  
Symbol  
Description  
Gate  
1
2
3
G
S
Source  
D
Drain  
ORDERING INFORMATION  
Part Number  
Package  
Part Marking  
SPP2095T252RG  
TO-252-2L  
SPP2095  
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )  
※ SPP2095T252RG : Tape Reel ; Pb – Free  
ABSOULTE MAXIMUM RATINGS  
(TA=25℃ Unless otherwise noted)  
Parameter  
Symbol  
Typical  
Unit  
Drain-Source Voltage  
VDSS  
-20  
V
Gate –Source Voltage  
VGSS  
ID  
±12  
V
A
TA=25℃  
TA=70℃  
-12  
-8  
Continuous Drain Current(TJ=150℃)  
Pulsed Drain Current  
IDM  
IS  
-20  
-12  
A
A
Continuous Source Current(Diode Conduction)  
TA=25℃  
TA=70℃  
40  
20  
Power Dissipation  
PD  
TJ  
W
Operating Junction Temperature  
-55/150  
℃
Storage Temperature Range  
TSTG  
-55/150  
105  
℃
Thermal Resistance-Junction to Ambient  
RθJA  
℃/W  
2006/03/16 Ver.2  
Page 2  
SPP2095  
P-Channel Enhancement Mode MOSFET  
ELECTRICAL CHARACTERISTICS  
(TA=25℃ Unless otherwise noted)  
Parameter  
Static  
Symbol  
Conditions  
Min.  
Typ  
Max. Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V(BR)DSS VGS=0V,ID=-250uA  
VGS(th) VDS=VGS,ID=-250uA  
-20  
V
-0.32  
-0.8  
Gate Leakage Current  
IGSS  
VDS=0V,VGS=±12V  
VDS=-20V,VGS=0V  
VDS=-20V,VGS=0V  
TJ=55℃  
VGS=-4.5V,ID=-6.0A  
VGS=-2.5V,ID=-3.6A  
VGS=-1.8V,ID=-2.0A  
±100  
-1  
nA  
uA  
Zero Gate Voltage Drain Current  
Drain-Source On-Resistance  
IDSS  
-5  
0.055  
0.072  
0.092  
0.065  
0.085  
0.105  
RDS(on)  
Ω
Forward Transconductance  
Diode Forward Voltage  
gfs  
VDS=-5V,ID=-2.8A  
IS=-6A,VGS=0V  
6
S
VSD  
-0.8  
-1.2  
8
V
Dynamic  
Total Gate Charge  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
4.8  
1.0  
1.0  
485  
85  
VDS=-10V,VGS=-4.5V  
ID≡-8.0A  
nC  
pF  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
VDS=-10V,VGS=0V  
f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
40  
10  
16  
23  
25  
20  
Turn-On Time  
Turn-Off Time  
VDD=-10V,RL=6Ω  
ID≡-1.0A,VGEN=-4.5V  
RG=6Ω  
13  
ns  
td(off)  
tf  
18  
15  
2006/03/16 Ver.2  
Page 3  
SPP2095  
P-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2006/03/16 Ver.2  
Page 4  
SPP2095  
P-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2006/03/16 Ver.2  
Page 5  
SPP2095  
P-Channel Enhancement Mode MOSFET  
TYPICAL CHARACTERISTICS  
2006/03/16 Ver.2  
Page 6  
SPP2095  
P-Channel Enhancement Mode MOSFET  
TO-252-2L PACKAGE OUTLINE  
2006/03/16 Ver.2  
Page 7  
SPP2095  
P-Channel Enhancement Mode MOSFET  
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the  
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.  
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions  
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information  
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support  
devices or systems without express written approval of SYNC Power Corporation.  
©The SYNC Power logo is a registered trademark of SYNC Power Corporation  
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved  
SYNC Power Corporation  
9F-5, No.3-2, Park Street  
NanKang District (NKSP), Taipei, Taiwan 115  
Phone: 886-2-2655-8178  
Fax: 886-2-2655-8468  
©http://www.syncpower.com  
2006/03/16 Ver.2  
Page 8  

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