SPP2301 [SYNC-POWER]
P-Channel Enhancement Mode MOSFET; P沟道增强型MOSFET
| 型号： | SPP2301 |
| 厂家： | 
SYNC POWER CROP. |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总8页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP2301
P-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
z
z
z
z
z
z
z
Power Management in Note book
The SPP2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
PIN CONFIGURATION(SOT-23-3L)
-20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V
-20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PART MARKING
2007/02/02 Ver.3
Page 1
SPP2301
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
Gate
1
2
3
G
S
Source
Drain
D
ORDERING INFORMATION
Part Number
Package
Part Marking
SPP2301S23RG
SOT-23-3L
01YW
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP2301S23RG : Tape Reel ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate –Source Voltage
VGSS
±12
V
A
TA=25℃
TA=70℃
-3.0
-2.0
Continuous Drain Current(TJ=150℃)
ID
Pulsed Drain Current
IDM
IS
-10
A
A
Continuous Source Current(Diode Conduction)
-1.6
TA=25℃
TA=70℃
1.25
0.8
Power Dissipation
PD
W
Operating Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
120
℃
Thermal Resistance-Junction to Ambient
RθJA
℃/W
2007/02/02 Ver.3
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SPP2301
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-20
V
-0.45
-1.5
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
±100
-1
nA
uA
Zero Gate Voltage Drain Current
IDSS
-10
VDS≦-5V,VGS=-4.5V
-6
-3
On-State Drain Current
ID(on)
A
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
0.095
0.150
0.12
0.17
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-5V,ID=-2.8A
IS=-1.6A,VGS=0V
6.5
S
VSD
-0.8
-1.2
10
V
Dynamic
Total Gate Charge
Qg
Qgs
5.8
0.85
1.7
415
223
87
VDS=-6V,VGS=-4.5V
ID≡-2.8A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qgd
Ciss
Coss
Crss
td(on)
VDS=-6V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
13
25
60
70
60
Turn-On Time
Turn-Off Time
VDD=-6V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
tr
td(off)
tf
36
42
34
ns
2007/02/02 Ver.3
Page 3
SPP2301
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/02/02 Ver.3
Page 4
SPP2301
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/02/02 Ver.3
Page 5
SPP2301
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/02/02 Ver.3
Page 6
SPP2301
P-Channel Enhancement Mode MOSFET
SOT-23-3L PACKAGE OUTLINE
2007/02/02 Ver.3
Page 7
SPP2301
P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2007/02/02 Ver.3
Page 8
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