概述
规格参数
数据手册SPP3403S23RGB 概述
P-Channel Enhancement Mode MOSFET P沟道增强型MOSFET 其他晶体管
SPP3403S23RGB 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | compliant | 风险等级： | 5.61 |
| Base Number Matches： | 1 |
SPP3403S23RGB 数据手册
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PDF下载SPP3403
P-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
z
z
z
z
z
z
z
Power Management in Note book
The SPP3403 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
PIN CONFIGURATION ( SOT-23-3L )
-30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=145mΩ@VGS=-2.5V
-30V/-1.0A,RDS(ON)=200mΩ@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PART MARKING
2008/10/25 Ver.5
Page 1
SPP3403
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
2
3
G
S
Gate
Source
Drain
D
ORDERING INFORMATION
Part Number
Package
SOT-23-3L
SOT-23-3L
Part Marking
A3YW
SPP3403S23RG
SPP3403S23RGB
A3YW
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP3403S23RG : Tape Reel ; Pb – Free
※ SPP3403S23RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
V
Drain-Source Voltage
VDSS
-30
Gate –Source Voltage
VGSS
ID
±12
V
TA=25℃
Continuous Drain Current(TJ=150℃)
TA=70℃
-3.5
-2.8
A
Pulsed Drain Current
IDM
IS
-20
A
A
Continuous Source Current(Diode Conduction)
-1.4
TA=25℃
1.25
Power Dissipation
PD
TJ
W
TA=70℃
0..81
Operating Junction Temperature
-55/150
℃
Storage Temperature Range
TSTG
-55/150
105
℃
Thermal Resistance-Junction to Ambient
RθJA
℃/W
2008/10/25 Ver.5
Page 2
SPP3403
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-30
V
-0.4
-1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
±100
-1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
-5
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
-4
A
VGS=-10V,ID=-2.8A
0.080
0.100
0.130
0.160
0.100
0.110
0.145
0.200
VGS=-4.5V,ID=-2.5A
RDS(on)
Drain-Source On-Resistance
Ω
VGS=-2.5V,ID=-1.5A
VGS=-1.8V,ID=-1.0A
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-10V,ID=-2.8A
IS=-1.2A,VGS =0V
4
S
VSD
-0.8
-1.2
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
5.8
0.8
1.5
380
55
VDS=-15V ,VGS=-4.5V
ID≡-2.0A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=-15V ,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
40
6
Turn-On Time
Turn-Off Time
VDD=-15V ,RL=15Ω
ID≡-1.0A ,VGEN=-10V
RG=3Ω
3.9
40
ns
td(off)
tf
15
2008/10/25 Ver.5
Page 3
SPP3403
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/10/25 Ver.5
Page 4
SPP3403
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/10/25 Ver.5
Page 5
SPP3403
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/10/25 Ver.5
Page 6
SPP3403
P-Channel Enhancement Mode MOSFET
SOT-23-3L PACKAGE OUTLINE
2008/10/25 Ver.5
Page 7
SPP3403
P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2008/10/25 Ver.5
Page 8
SPP3403S23RGB 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SPP3403_08 | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407 | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407B | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
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| SPP3407BS23RGB | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407D | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407DS23RG | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407DS23RGB | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407S23RG | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407S23RGB | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
| SPP3407W | SYNC-POWER | P-Channel Enhancement Mode MOSFET | 获取价格 |
|
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