RBV2502 [SYNSEMI]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | RBV2502 |
| 厂家： | 
SYNSEMI, INC. |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
RBV2500 - RBV2510
RBV25
PRV : 50 - 1000 Volts
Io : 25 Amperes
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
Æ 3.2 ± 0.1
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
+
~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
10
7.5 7.5
2.0 ± 0.2
0.7 ± 0.1
±0.2 ±0.2 ±0.2
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in millimeters
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
2500
50
RBV
2501
100
RBV
2502
200
RBV
2504
400
RBV
2506
600
RBV
2508
800
RBV
2510
1000
SYMBOL
RATING
UNIT
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
A
35
50
70
140
200
280
400
25
420
600
560
800
700
100
1000
Maximum DC Blocking Voltage
IF(AV)
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
300
A
I2t
VF
A2S
V
375
1.1
Maximum Forward Voltage per Diode at IF = 12.5 A
10
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
mA
200
1.45
IR(H)
Ta = 100 °C
mA
°C/W
°C
RqJC
TJ
- 40 to + 150
- 40 to + 150
Operating Junction Temperature Range
Storage Temperature Range
TSTG
°C
Notes :
1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2 Rev. 03 : September 9, 2005
RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
300
30
25
20
15
10
250
200
150
100
50
TJ = 50 °C
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
(12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
5
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 10
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
10
1.0
Pulse Width = 300 ms
1 % Duty Cycle
0.1
1.0
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0
40
60
80
100
12
20
140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 03 : September 9, 2005
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