SD101CWS [SHUNYE]
SCHOTTKY DIODES; 肖特基二极管
| 型号： | SD101CWS |
| 厂家： | 
Shunye Enterprise |
| 描述： | SCHOTTKY DIODES |
| 文件： | 总2页 (文件大小：867K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD101AWS-SD101CWS
SCHOTTKY DIODES
FEATURES
SOD-323
1.35(0.053)
1.15(0.045)
1.26(.050)
1.24(.048)
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
2.70(0.106)
2.30(0.091)
2.70(0.106)
1.80(0.071)
1.60(0.063)
1.80(0.071)
1.60(0.063)
2.30(0.091)
MECHANICAL DATA
.305(0.012)
.295(0.010)
0.4(0.016)
.25(0.010)
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking: SD101AWS:S1, SD101BWS:S2, SD101CWS:S3
.177(.007)
.089(.003)
0.1(0.004)
MIN
1.00(.040)
0.80(.031)
.72(0.028)
.69(0.027)
.08(.003)
MIN
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25 C
SYMBOLS
UNITS
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
SD101AWS
SD101BWS
SD101CWS
VRRM
VRMS
VDC
VOLTS
60
42
50
40
28
RMS Reverse voltage
VR(RMS)
IFM
V
mA
mA
A
35
15
Forward continuous current
Repetitive peak forward current @t<1.0s
@t=10us
IFRM
50
2. 0
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Pd
200
mW
C/W
C
RΘJA
TSTG
300
-65 to +125
Electrical ratings @TA=25
PARAMETER
SYMBOLS
Min.
Typ.
Max.
Unit
Conditions
Reverse breakdown voltage
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
60
50
40
IR=10uA
IR=10uA
IR=10uA
IF=1.0mA
IF=1.0mA
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
VR=50V
VR=40V
VR=30V
V(BR)R
V
Fowrard voltage
0.41
0.40
0.39
1.00
0.95
0.90
VF
V
Reverse current
IRM
uA
pF
ns
0.2
Capacitance between terminals
Reverse recovery time
2.0
2.1
2.2
1.0
CT
trr
VR=0V,f=1.0MHz
IF=IR=5mA
Irr=0.1XIR,RL=100
www.shunyegroup.com
RATINGS AND CHARACTERISTIC CURVES SD101AWS-SD101CWS
FIG. 1- POWER DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
500
400
10
See Note1
A
B
C
1.0
300
200
100
0
0.1
0.01
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
TA,AMBIENT TEMPERATURE( C)
VR REVERSE VOLTAGE.(V)
FIG.3- TYPICAL TOTAL CAPACITANCE
VS REVERSE VOLTAGE
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
2
10
TA=125 C
Tj=25
C
f=1MHz
1
C
TA=75 C
B
A
0.1
1
TA=25 C
0.01
TA=0 C
0.001
TA=-65 C
0
0.0001
0
10
20
30
40
50
0
10
20
30
40
50
60
VR REVERSE VOLTAGE.(V)
VR REVERSE VOLTAGE.(V)
www.shunyegroup.com
相关型号：
SD101CWS-13
Rectifier Diode, Schottky, 1 Element, 0.015A, 40V V(RRM), Silicon, PLASTIC, SOD-323, 2 PIN
DIODES
SD101CWS-7
Rectifier Diode, Schottky, 1 Element, 0.015A, 40V V(RRM), Silicon, PLASTIC, SOD-323, 2 PIN
DIODES
SD101CWS-E3-08
Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
VISHAY
SD101CWS-G3-08
Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, GREEN PACKAGE-2
VISHAY
SD101CWS-HE3-08
Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
VISHAY
©2020 ICPDF网 联系我们和版权申明