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TIP142T [TAI-SAW]

Monolithic Construction With Built In Base-Emitter Shunt Resistors;
TIP142T
型号： TIP142T
厂家： TAI-SAW TECHNOLOGY CO., LTD.    TAI-SAW TECHNOLOGY CO., LTD.
描述：

Monolithic Construction With Built In Base-Emitter Shunt Resistors

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TIP140T/141T/142T  
◎ SEMIHOW REV.A0,Oct 2007  
TIP140T/141T/142T  
Monolithic Construction With Built In  
Base-Emitter Shunt Resistors  
- High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.)  
- Collector-Emitter Sustaining Voltage  
- Low Collector-Emitter Saturation Voltage  
- Industrial Use  
PNP Epitaxial  
Silicon Darlington  
Transistor  
- Complementary to TIP145/146/147  
Equivalent Circuit  
Absolute Maximum Ratings Ta=25℃ unless otherwise noted  
CHARACTERISTICS  
SYMBOL  
RATING  
UNIT  
Collector-Base Voltage : TIP140T  
: TIP141T  
VCBO  
60  
80  
100  
V
V
V
: TIP142T  
Collector-Emitter Voltage : TIP140T  
: TIP141T  
VCEO  
60  
80  
100  
V
V
V
: TIP142T  
TO-220  
1. Base  
2. Collector  
3. Emitter  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulse)  
Base Current  
VEBO  
IC  
ICP  
IB  
5
10  
15  
V
A
A
0.5  
A
Collector Dissipation(Ta=25℃)  
Collector Dissipation(Tc=25℃)  
Junction Temperature  
Storage Temperature  
PC  
PC  
TJ  
2
80  
150  
-65~150  
W
W
℃
℃
1
2
3
TSTG  
Electrical Characteristics Ta=25℃ unless otherwise noted  
CHARACTERISTICS  
SYMBOL  
Test Condition  
Min  
Max  
Unit  
Collector-Emitter Sustaining Voltage  
VCEO(SUS)  
: TIP140T  
: TIP141T  
: TIP142T  
60  
80  
100  
V
V
V
IC=30mA, IB=0  
Collector Cut-off Current  
: TIP140T  
ICEO  
V
V
V
CE=30V,IB=0  
CE=40V,IB=0  
CE=50V,IB=0  
2
2
2
㎃
㎃
㎃
: TIP141T  
: TIP142T  
Collector Cut-off Current  
: TIP140T  
ICBO  
V
V
V
CE=60V,IE=0  
CE=80V,IE=0  
CE=100V,IE=0  
1
1
1
㎃
㎃
㎃
: TIP141T  
: TIP142T  
Emitter Cut-off Current  
DC Current Gain  
IEBO  
hFE  
VEB=5V,IC=0  
2
㎃
VCE=4V,IC=5A  
1000  
500  
V
CE=4V,IC=10A  
Collector-Emitter Saturation Voltage  
VCE(sat)  
IC=5A,IB=10mA  
IC=10A,IB=40mA  
2
3
V
V
Base-Emitter ON Voltage  
VBE(on)  
Cob  
VCE=4V,IC=10A  
3
V
VCB=10V,IE=0, f=0.1MHz  
Output Capacitance  
200  
㎊
* Pulse Test: PW≤300us, Duty Cycle≤2%  
◎ SEMIHOW REV.A0,Oct 2007  
Typical Characteristics  
◎ SEMIHOW REV.A0,Oct 2007  
Package Dimension  
TO-220 (A)  
±0.20  
±0.20  
9.90  
20  
4.50  
±0.  
0
3.6  
±0.20  
1.30  
φ
±0.20  
2.40  
±0.20  
1.27  
±0.20  
1.52  
±0.20  
0.80  
2.54typ  
2.54typ  
±0.20  
0.50  
Dimensions in Millimeters  
◎ SEMIHOW REV.A0,Oct 2007  
Package Dimension  
TO-220 (B)  
±0.20  
±0.20  
4.57  
20  
0.  
±
4
±0.20  
3.8  
1.27  
φ
±0.20  
2.67  
±0.20  
1.27  
±0.20  
0.81  
2.54typ  
2.54typ  
±0.20  
0.40  
Dimensions in Millimeters  
◎ SEMIHOW REV.A0,Oct 2007  

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