BC848B [TAITRON]

SMD General Purpose Transistor (NPN); SMD通用晶体管( NPN )
BC848B
型号: BC848B
厂家: TAITRON COMPONENTS INCORPORATED    TAITRON COMPONENTS INCORPORATED
描述:

SMD General Purpose Transistor (NPN)
SMD通用晶体管( NPN )

晶体 晶体管
文件: 总3页 (文件大小:123K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC846A,B  
BC847A,B,C  
RoHS  
Pb  
COMPLIANCE  
BC848A,B,C  
0.2 Watts NPN Plastic-Encapsulate Transistors  
SOT-23  
Features  
—
—
—
Ideally suited for automatic insertion  
Epitaxial planar die construction  
For switching, AF driver and amplifier  
applications  
—
—
Complementary NPN type available(BC856)  
Qualified to AEC-Q101 standards for high  
reliability  
Mechanical Data  
—
—
Case: SOT-23, Molded plastic  
Case material: molded plastic. UL flammability  
classification rating 94V-0  
—
—
Moisture sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIIL-STD-202,  
Method 208  
—
—
—
Lead free plating  
Marking & Polarity: See diagram  
Weight: 0.008 gram (approx.)  
Dimensions in inches and (millimeters)  
Maximum Ratings T =25 oC unless otherwise specified  
A
Type Number  
Symbol BC846 BC847 BC848 Units  
Collector-base breakdown voltage  
IC=10uA, IE=0  
VCBO  
VCEO  
ICM  
80  
65  
50  
45  
0.1  
0.2  
6
30  
30  
V
V
A
W
V
Collector-emitter breakdown voltage IC=10mA, IB=0  
Collector current  
Power dissipation (Tamb=25oC) (Note 1)  
PCM  
Emitter-base breakdown voltage  
Collector cut-off current  
IE=10uA, IC=0  
VCB=70V IE=0  
VCB=50V IE=0  
VCB=30V IE=0  
VCE=60V IB=0  
VCE=45V IB=0  
VCE=30V IB=0  
VEB=5V IC=0  
VEBO  
0.1  
0.1  
ICBO  
0.1  
0.1  
uA  
uA  
0.1  
0.1  
Collector cut-off current  
Emitter cut-off current  
ICEO  
IEBO  
0.1  
0.5  
uA  
V
Collector-emitter saturation voltage IC=100mA, IB=5mA VCE(sat)  
Base-emitter saturation voltage  
Base-emitter voltage  
IC=100mA, IB=5mA VBE(sat)  
1.1  
700  
770  
V
mV  
VCE=5V IC=2mA  
VCE=5V IC=10mA  
VBE  
Transition frequency VCE=5V IC=10mA f=100MHz  
Operating and Storage Temperature Range  
fT  
100  
-55 to + 150  
MHz  
oC  
TJ, TSTG  
Symbol  
Type Number  
Min  
Max  
Units  
DC current gain BC846A,847A,848A  
BC846B,847B,848B VCE=5V IC=2mA  
BC847C / BC848C  
110  
200  
420  
220  
450  
800  
HFE(1)  
DEVICE MARKING  
BC846A=1A, BC846B=1B, BC847A=1E, BC847B=1F, BC847C=1G, BC848A=1J, BC848B=1K, BC848C=1L  
Note 1: Transistor mounted on an FR4 Printed-circuit board.  
Version: B07  
RATINGS AND CHARACTERISTIC CURVES (BC846A, B ; BC847A, B, C ; BC848A, B, C)  
FIG.1- NORMALIZED DC CURRENT GAIN  
FIG.2- "SATURATION" AND "ON" VOLTAGES  
2.0  
1.5  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
T
== 2255OCC  
V
== 1100VV  
CE  
== 2255OCC  
A
T
A
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
VCE(sat) @ IC / IB =10  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
0.2 0.3  
0.5  
0.1  
1
2
3
5
10  
20 30  
50  
100  
IC, COLLECTOR CURRENT (mAdc)  
IC, COLLECTOR CURRENT (mAdc)  
FIG.3- COLLECTOR SATURATION REGION  
FIG.4- BASE-EMITTER TEMPERATURE COEFFICIENT  
-55OC ttoo ++112255OCC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
T
== 2255OCC  
A
IC=  
10 mmAA  
IC=  
20 mmAA  
IC= 220000 mmAA  
IC= 110000 mmAA  
IC= 5500 mmAA  
0.02  
0.1  
1.0  
IB, BASE CURRENT (mA)  
10  
20  
0.2  
1.0  
10  
100  
IC, COLLECTOR CURRENT (mA)  
FIG.5- CAPACITANCES  
FIG.6- CURRENT-GAIN - BANDWIDTH PRODUCT  
10  
9.0  
400  
300  
== 2255OCC  
V
== 1100VV  
CE  
T
A
8.0  
7.0  
6.0  
T
== 2255OCC  
A
200  
5.0  
4.0  
C
ib  
100  
80  
3.0  
2.0  
C
ob  
60  
50  
40  
30  
1.0  
0.4  
20  
0.5  
0.6 0.8 1.0  
2.0  
3.0 4.0  
6.0 8.0 10  
20  
30 40  
0. 7 1.0  
2.0  
3.0  
5.0 7.0  
10  
20  
30  
50  
VR, REVERSE VOLTAGE (VOLTS)  
IC, COLLECTOR CURRENT (mAdc)  
Version: B07  
RATINGS AND CHARACTERISTIC CURVES (BC846A, B ; BC847A, B, C ; BC848A, B, C)  
FIG.8- "ON" VOLTAGES  
FIG.7- DC CURRENT GAIN  
2.0  
1.5  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
== 2255OCC  
V
== 1100VV  
T
CE  
A
T == 2255OCC  
A
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
VCE(sat) @ IC / IB =10  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
200  
0.2 0.3  
0.5  
1
2
3
5
10  
20 30  
50  
100  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
FIG.9- COLLECTOR SATURATION REGION  
T
FIG.10- BASE-EMITTER TEMPERATURE COEFFICIENT  
-55OC ttoo ++112255OCC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
-1.0  
-1.4  
-1.8  
-2.2  
-2.6  
-3.0  
== 2255OCC  
A
IC= 220000 mmAA  
IC= 5500 mmAA  
VB for VBE  
IC= 110000 mmAA  
IC=  
20 mmAA  
IC=  
10 mmAA  
0.02  
0.1  
1.0  
IB, BASE CURRENT (mA)  
10  
20  
0.2  
1.0  
10  
100  
IC, COLLECTOR CURRENT (mA)  
FIG.11- CAPACITANCES  
FIG.12- CURRENT-GAIN - BANDWIDTH PRODUCT  
40  
20  
1000  
V
= 5V  
CE  
== 2255OCC  
T
== 2255OCC  
A
T
500  
400  
A
300  
200  
C
ib  
10  
100  
80  
8.0  
60  
50  
40  
6.0  
4.0  
C
ob  
30  
20  
2.0  
10  
0. 01  
0.1  
0.2  
0.4 0.6 1.0  
2.0  
4.0 6.0 10  
20 30 40 60 100  
1.0 2.0  
5.0 10 20  
50 100  
1000  
VR, REVERSE VOLTAGE (VOLTS)  
IC, COLLECTOR CURRENT (mA)  
Version: B07  

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