PN2222A [TAITRON]
NPN General Purpose Transistor; NPN通用晶体管
| 型号： | PN2222A |
| 厂家： | 
TAITRON COMPONENTS INCORPORATED |
| 描述： | NPN General Purpose Transistor |
| 文件： | 总6页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN General Purpose Transistor
PN2222A
NPN General Purpose Transistor
Features
• This device is for use as a medium power amplifier
and switch requiring collector currents up to 500mA
Absolute Maximum Ratings (Tamb=25°C unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
IC
40
V
V
75
6
V
1.0
A
Storage Temperature
TSTG
-55～ 150
°C
Caution:
1.These ratings are based on a maximum junction temperature of 150°C
2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
Rev. A/WW
Page 1 of 6
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-247-2232 (800)-TAITRON (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
NPN General Purpose Transistor
PN2222A
Electrical Characteristics (Tamb=25°C unless otherwise noted)
Parameter
Off Characteristics
Test Condition
Symbol
Min.
Max.
Unit
Collector-Base Breakdown Voltage
IC=10uA, IE=0
IC=10mA, IB=0
BVCBO
BVCEO
75
40
6
V
V
Collector-Emitter Breakdown
Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
IE=10uA,IC=0
VCB=60V,IE=0
VEB=3V,IC=0
BVEBO
ICBO
V
0.01
10
uA
nA
IEBO
On Characteristics
35
50
VCE=10V, IC =0.1mA
VCE =10V, IC =1mA
VCE =10V *, IC =10mA
(Tamb=-55°C)
DC Current Gain
hFE
75
100
40
VCE =10V *, IC =150mA
VCE =10V *, IC =500mA
300
IC =150mA,IB=15mA
IC =500mA,IB=50mA
0.3
1
Collector- Emitter Saturation
Voltage *
VCE(sat)
VBE(sat)
V
V
IC =150mA, IB =15mA
IC =500mA, IB =50mA
1.2
2
Base-Emitter Saturation Voltage *
0.6
* Pulse Test: Pulse Width≤300us, Duty Cycle≤2.0%
Small Signal Characteristics
IC=20mA, VCE=20V,
Current Gain Bandwidth Product
fT
300
MHz
f=100MHz
Output Capacitance
Input Capacitance
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC =0, f=1MHz
Cobo
Cibo
8.0
25
pF
pF
IC =20mA, VCB=20V,
f=31.8MHz
Collector Base Time Constant
Noise Figure
rb’Cc
NF
150
4.0
pS
dB
IC =100uA, VCE=10V
Rs=1.0kΩ, f=1.0KHz
Real Part of Common-Emitter
IC =20mA, VCE=20V,
f=300MHz
Re(hie)
60
Ω
High Frequency Input Impedance
Switching Characteristics
Delay Time
td
tr
10
25
ns
ns
ns
ns
VCC=30V, VEB(off)=0.5V
IC=150mA, IB1=15mA
Rise Time
Storage Time
Fall Time
ts
tf
225
60
VCC=30V, IC=150mA
IB1=IB2=15mA
Rev. A/WW
Page 2 of 6
www.taitroncomponents.com
NPN General Purpose Transistor
PN2222A
Thermal Characteristics
Total Device Dissipation
Derate above 25°C
625
5.0
mW
PD
mW/°C
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
83.3
200
°C/W
°C/W
Dimensions (Unit:mm)
Rev. A/WW
Page 3 of 6
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NPN General Purpose Transistor
PN2222A
Typical Characteristics Curves
Rev. A/WW
Page 4 of 6
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NPN General Purpose Transistor
PN2222A
Rev. A/WW
Page 5 of 6
www.taitroncomponents.com
NPN General Purpose Transistor
PN2222A
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355
Tel: (800) TAITRON (800) 247-2232 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO
C.P. 42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONETS INCORPORATED E REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001
BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
CROSS REGION PLAZA, 899 LINGLING ROAD, SUITE 18C, SHANGHAI, 200030, CHINA
Tel: +86-21-54249942
Fax: +86-21-5424-9931
Rev. A/WW
Page 6 of 6
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