TIP110 [TAITRON]
Darlington Power Transistors (NPN); 达林顿功率晶体管（ NPN ）
| 型号： | TIP110 |
| 厂家： | 
TAITRON COMPONENTS INCORPORATED |
| 描述： | Darlington Power Transistors (NPN) |
| 文件： | 总4页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Darlington Power Transistors (NPN)
TIP110/111/112
Darlington Power Transistors (NPN)
Features
• Designed for general-purpose amplifier and low speed
switching applications
• RoHS Compliant
TO-220
Mechanical Data
Case:
Terminals:
Weight:
TO-220, Plastic Package
Solderable per MIL-STD-202, Method 208
0.08 ounces, 2.24 grams
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
VCBO
VCEO
VEBO
IC
Description
Collector-Base Voltage
TIP110
60
TIP111
TIP112
100
Unit
80
80
V
V
Collector-Emitter Voltage
60
100
Emitter-Base Voltage
5.0
V
Collector Current Continuous
2.0
A
Collector Current Peak
4.0
A
ICM
Base Current
50
mA
W
IB
Power Dissipation upto TC=25°C
Power Dissipation upto TA=25°C
Power Dissipation Derate above TA=25°C
Thermal Resistance from Junction to Ambient in Free Air
Thermal Resistance from Junction to Case
Operating Junction and Storage Temperature Range
50
2.0
W
PD
16
mW/° C
° C /W
° C /W
° C
62.5
2.5
RθJA
RθJC
-65 to +150
TJ, TSTG
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Rev. A/AH 2008-06-13
Page 1 of 4
Tel: (800)-TAITRON (800)-824-8766
Fax: (800)-TAITFA (800)-824-8329
(661)-257-6060
(661)-257-6415
Darlington Power Transistors (NPN)
TIP110/111/112
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
*hFE
Description
Min.
Max.
Unit
Conditions
1000
-
-
VCE=4V, IC=1A
VCE=4V, IC=2A
D.C. Current Gain
500
TIP110
TIP111
TIP112
60
-
V
V
Collector-Emitter Sustaining
Voltage
80
-
IC=30mA, IB=0
*VCEO(sus)
100
-
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-
-
-
-
-
2.5
2.8
2.0
1.0
2.0
V
IC=2A, IB=8mA
IC=2A, VCE=4V
*VCE(sat)
*VBE(on)
ICEO
V
Collector-Emitter Cut-off Current
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
mA
mA
mA
VCE=Half Rated VCEO
VCB=Half Rated VCBO
VEB=5V, IC=0
ICBO
IEBO
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH 2008-06-13
Page 2 of 4
www.taitroncomponents.com
Darlington Power Transistors (NPN)
TIP110/111/112
Dimensions in inch (mm)
TO-220
Rev. A/AH 2008-06-13
Page 3 of 4
www.taitroncomponents.com
Darlington Power Transistors (NPN)
TIP110/111/112
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH 2008-06-13
Page 4 of 4
www.taitroncomponents.com
相关型号：
TIP110-6261
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP110-6264
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP110-DR6259
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
©2020 ICPDF网 联系我们和版权申明