1N4704TA1 [TAK_CHEONG]
Zener Diode, 17V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN;型号: | 1N4704TA1 |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Zener Diode, 17V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN |
文件: | 总9页 (文件大小:460K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Licensed by ON Semiconductor,
trademark of Semiconductor
®
a
Components Industries, LLC for
Zener Technology and Products.
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Maximum Ratings (Note 1)
Rating
Symbol
Value
Unit
Maximum Steady State Power Dissipation
PD
500
mW
@ TL ≤75°C, Lead Length = 3/8”
4.0
mW/°C
°C
Derate Above 75°C
Operating and Storage
Temperature Range
TJ, Tstg
-65 to +200
AXIAL LEAD
DO35
1. Some part number series have lower JEDEC registered ratings.
Specification Features
• Zener Voltage Range = 1.8 V to 43 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO-35 Package (DO-204AH)
• Double Slug Type Construction
• Metallurgical Bonding
Cathode
Anode
Mechanical Characteristics
Case
Finish
: Double slug type, hermetically sealed glass
: All external surfaces are corrosion resistant and leads are readily solderable.
MARKING DIAGRAM
Polarity : Cathode indicated by polarity band
Mounting: Any
L
1N
4x
Maximum Lead Temperature for Soldering Purposes
230°C, 1/16” from the case for 10 seconds
xx
YMM
L
= Logo
= Device Code
= Year
1N4xxx
Y
MM
= Month
Ordering Information
Device
Package
Shipping
1N4xxx
Axial Lead
Axial Lead
Axial Lead
Lead Form
Lead Form
Axial Lead
Axial Lead
Lead Form
Lead Form
3000 Units / Box
1N4xxxRL
5000 Units / Tape & Reel
1N4xxxRL2 *
1N4xxxRA1 !
1N4xxxRA2 i
1N4xxxTA
5000 Units / Tape & Reel
3000 Units / Radial Tape & Ammo
3000 Units / Radial Tape & Ammo
5000 Units / Tape & Ammo
5000 Units / Tape & Ammo
3000 Units / Radial Tape & Reel
3000 Units / Radial Tape & Reel
1N4xxxTA2 *
1N4xxxRR1 !
1N4xxxRR2 i
* The “2” suffix refers to 26 mm tape spacing.
! Polarity band up with cathode lead off first.
i Polarity band down with cathode lead off first.
Devices listed in bold italic are Tak Cheong
Preferred devices. Preferred devices are
recommended choices for future use and best
overall value.
March 2002 / A
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1
1N4768 through 1N4717
Low level oxide passivated zener diodes for
applications requiring extremely low operating currents, low
leadage, and sharp breakdown,
ELECTRICAL CHARACTERIZATION (TA
=
(25°C unless
otherwise noted, VF = 1.5V max @ IF = 100mA for all types)
Symbol
Parameter
VZ
IZT
∆VZ
IR
Reverse Zener Voltage @ IZT
Reverse Zener Current
Reverse Zener Voltage Change
Reverse Leakage Current @ VR
Reverse Voltage
VR
IF
Forward Current
VF
IZM
Forward Voltage @ IF
Maximum DC Zener Current
ELECTRICAL CHARACTERIZATION (TA = (25°C unless otherwise noted, VF = 1.5V max @ IF = 100mA for all types)
Zener Voltage
Leakage Current
(Note 4.)
IZM
∆VZ
Device
Device
(Note 3.)
(Note 5.)
(Note 6.)
(Note 2.)
Marking
VZ (Volts)
Nom
@ IZT
(uA)
IR @ VR
Min
Max
(uA Max)
(Volts)
(mA)
(Volts)
1N4678
1N4679
1N4680
1N4681
1N4682
1N4678
1N4679
1N4680
1N4681
1N4682
1.71
1.9
1.8
2
1.89
2.1
50
50
50
50
50
7.5
1
120
110
100
95
0.7
0.7
5
4
2
1
1
1
1
1
2.09
2.28
2.565
2.2
2.4
2.7
2.31
2.52
2.835
0.75
0.8
90
0.85
1N4683
1N4684
1N4685
1N4686
1N4687
1N4683
1N4684
1N4685
1N4686
1N4687
2.85
3.135
3.42
3
3.15
3.465
3.78
50
50
50
50
50
0.8
7.5
7.5
5
1
1.5
2
85
80
75
70
65
0.9
3.3
3.6
3.9
4.3
0.95
0.95
0.97
0.99
3.705
4.085
4.095
4.515
2
4
2
1N4688
1N4689
1N4690
1N4691
1N4692
1N4688
1N4689
1N4690
1N4691
1N4692
4.465
4.845
5.32
4.7
5.1
5.6
6.2
6.8
4.935
5.355
5.88
50
50
50
50
50
10
10
10
10
10
3
3
60
55
50
45
35
0.99
0.97
0.96
0.95
0.9
4
5.89
6.51
5
6.46
7.14
5.1
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ±
1°C and 3/8” lead length.
4. REVERSE LEAKAGE CURREN (IR)
Reverse leakage currents are guaranteed and measured at VR shown on the table.
5. MAXIMUM ZENER CURRENT RATINGS (IZM
)
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC 250 mW rating.
6. MAXIMUM VOLTAGE CHANGE (∆VZ)
Voltage change is equal to the difference between VZ at 100uA and at 10uA.
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2
1N4678 through 1N4717 Series
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.5 V Max @ IF = 100mA for all types)
Zener Voltage
Leakage Current
(Note 8.)
(Note 9.)
IZM
∆VZ
VZ (Volts)
Nom
@ IZT
IR @ VR
(Note 10.)
(Note 11.)
Device
Device
Marking
Min
Max
(Volts)
5.7
(mA)
(Volts)
(µA)
(µA Max)
10
(Note 7.)
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
7.125
7.79
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
7.875
8.61
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
31.8
29
0.75
0.5
1
6.2
6.6
8.265
8.645
9.5
9.135
9.555
10.5
1
27.4
26.2
24.8
21.6
20.4
19
0.1
1
6.9
0.08
0.1
1
7.6
10.45
11.4
11.55
12.6
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
8.4
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
9.1
12.35
13.3
13.65
14.7
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
14.25
15.2
15.75
16.8
16.15
17.1
17.85
18.9
18.05
19
19.95
21
20.9
23.1
0.22
0.24
0.25
0.27
0.28
0.3
22.8
25.2
23.75
25.65
26.6
26.25
28.35
29.4
9.5
20.4
21.2
22.8
25
8.8
8.5
28.5
31.5
7.9
31.35
34.2
34.65
37.8
7.2
0.33
0.36
0.39
0.43
27.3
29.6
32.6
6.6
37.05
40.85
40.95
45.15
6.1
5.5
7. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
8. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
9. REVERSE LEAKAGE CURRENT (IR)
Reverse leakage currents are guaranteed and measured at VR shown on the table.
10. MAXIMUM ZENER CURRENT RATINGS (IZM
)
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC 250 mW rating.
11. MAXIMUM VOLTAGE CHANGE (∆VZ)
Voltage change is equal to the difference between VZ at 100µA and at 10µA.
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3
1N4678 through 1N4717 Series
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
HEAT
SINKS
3/8"
3/8"
0
20
40
60
80
100
120
140
160
180
200
T
, LEAD TEMPERATURE (°C)
L
Figure 1. Steady State Power Derating
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4
1N4678 through 1N4717 Series
APPLICATION NOTE - ZENER VOLTAGE
500
400
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
L
L
300
200
100
Lead Temperature, TL, should be determined from:
2.4-60 V
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
62-200 V
0
0
0.2
0.4
0.6
0.8
1
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
L , LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
2000
1000
BREAKDOWN VOLTAGE
TJ = TL + ∆TJL
.
700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
200
100
70
∆TJL = θJLPD.
50
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(∆TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
20
10
∆V = θVZTJ.
7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
2
1
0.7
0.5
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
+125°C
0.2
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
0.1
0.07
0.05
0.02
0.01
0.007
0.005
+25°C
0.002
0.001
14
3
4
5
6
7
8
9
10
11
12
13
15
V
, NOMINAL ZENER VOLTAGE (VOLTS)
Z
Figure 3. Typical Leakage Current
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5
1N4678 through 1N4717 Series
TEMPERATURE COEFFICIENTS
(-55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
+12
+10
100
70
50
+8
+6
+4
+2
30
20
VZ @ IZ (NOTE 2)
RANGE
10
7
5
RANGE
VZ @ IZT
0
-2
-4
3
2
(NOTE 2)
1
2
7
10
4
5
6
8
9
11
10
20
30
V , ZENER VOLTAGE (VOLTS)
Z
50
70
100
3
12
V
, ZENER VOLTAGE (VOLTS)
Z
Figure 4a. Range for Units to 12 Volts
Figure 4b. Range for Units 12 to 100 Volts
200
180
160
+6
+4
VZ @ IZ
T = 25 °C
A
+2
0
20mA
140
0.01mA
1mA
VZ @ IZT
120
100
-2
-4
(NOTE 2)
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOL TS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
6
8
5
120
130
140
150
160
170
180
190
200
3
4
7
V
, ZENER VOLTAGE (VOLTS)
V
, ZENER VOLTAGE (VOLTS)
Z
Z
Figure 4c. Range for Units 120 to 200 Volts
Figure 5. Effect of Zener Current
1000
100
70
TA = 25°C
500
T= 25 °C
50
0V BIAS
0 BIAS
200
100
50
30
20
1V BIAS
1 VOLT BIAS
10
20
7
5
50% OF V BIAS
10
5
50% OF
V
BIAS
Z
3
2
2
1
1
1
2
5
10
20
50
100
120
140
160
180
190
200
220
V
, ZENER VOLTAGE (VOLTS)
V , ZENER VOLTAGE (VOLTS)
Z
Z
Figure 6a. Typical Capacitance 2.4-100 Volts
Figure 6b. Typical Capacitance 120-200 Volts
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6
1N4678 through 1N4717 Series
100
RECT ANGULAR
WAVEFORM
70
50
11V-91V NONREPETITIVE
1.8V-10V NONREPETITIVE
T
= 25°C PRIOR TO
J
30
20
5% DUTY CYCLE
INITIAL PULSE
10
10% DUTY CYCLE
20% DUTY CYCLE
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
PW, PULSE WIDTH (ms)
Figure 7a. Maximum Surge Power 1.8-91 Volts
1000
500
1000
700
500
T
= 25°C
(rms) = 0.1 Iz(dc)
J
VZ = 2.7V
i
Z
RECT ANGULAR
WAVEFORM, TJ = 25°C
f = 60 Hz
300
200
200
47V
27V
100
100
70
50
100-200 VOLTS NONREPETITIVE
50
20
30
20
6.2V
10
7
10
5
5
3
2
2
1
1
0.01
0.1
1
10
100
1000
0.1
0.2
0.5
1
2
5
10
20
50
100
PW, PULSE WIDTH (ms)
I
, ZENER CURRENT (mA)
Z
Figure 7b. Maximum Surge Power DO-35
100-200Volts
Figure 8. Effect of Zener Current on
Zener Impedance
1000
700
500
1000
TJ = 25°C
iZ (rms) = 0.1 IZ (dc)
MAXIMUM
MINIMUM
500
200
f = 60Hz
IZ = 1mA
5mA
200
100
70
50
100
50
20mA
20
20
10
5
75°C
10
7
5
25°C
0°C
150°C
2
1
2
1
1
2
3
5
7
10
20
30
50 70 100
0.4
0.5
0.6
0.7
V , FOR WARD VOLTAGE (VOLTS)
F
0.8
0.9
1
1.1
V
, ZENER VOLTAGE (VOLTS)
Z
Figure 9. Effect of Zener Voltage on Zener Impedance
Figure 10. Typical Forward Characteristics
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7
1N4678 through 1N4717 Series
20
10
T
= 25°C
A
1
0.1
0.01
6
1
2
5
7
8
9
10
11
12
13
14
15
16
3
4
V
, ZENER VOLTAGE (VOLTS)
Z
Figure 1 1. Zener Voltage versus Zener Current - V = 1 thru 16 Volts
Z
10
T
= 25°C
A
1
0.1
0.01
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
, ZENER VOLTAGE (VOLTS)
Z
Figure 12. Zener Voltage versus Zener Current - V = 15 thru 30 Volts
Z
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8
1N4678 through 1N4717 Series
10
T
= 25°
A
1
0.1
0.01
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
V
, ZENER VOLTAGE (VOLTS)
Z
Figure 13. Zener Voltage versus Zener Current - V = 30 thru 105 Volts
Z
10
1
0.1
0.01
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
V
, ZENER VOLTAGE (VOLTS)
Z
Figure 14. Zener Voltage versus Zener Current - V = 110 thru 220 Volts
Z
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相关型号:
1N4704UR
Zener Diode; Max Peak Repetitive Reverse Voltage: 5; Max TMS Bridge Input Voltage: 0.5
DIGITRON
1N4704UR/TR
Zener Diode, 17V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, SOD-80, MELF-2
MICROSEMI
1N4704URTR
Zener Diode, 17V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, SOD-80, MELF-2
MICROSEMI
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