MBR10100CT [TAK_CHEONG]
10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier; 10A的肖特基二极管双高压肖特基整流器
| 型号： | MBR10100CT |
| 厂家： | 
Tak Cheong Electronics (Holdings) Co.,Ltd |
| 描述： | 10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier |
| 文件： | 总4页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TAK CHEONG®
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
1
2
3
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
TO-220AB
DEVICE MARKING DIAGRAM
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBR
Line 3 = 10xxxCT
Line 4 = Polarity
L xxyy
Line 2
Line 3
Line 4
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
POLARITY CONFIGURATION
1. Anode
2. Cathode
3. Anode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBR10100CT
MBR10150CT
MBR10200CT
Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Per Leg
100
150
200
V
IF(AV)
5
10
A
A
Per Package
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
IFSM
80
TSTG
TJ
Storage Temperature Range
-65 to +150
+150
°C
°C
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol
Parameter
Value
Units
Maximum Thermal Resistance, Junction-to-Case (per leg)
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
1.5
°C/W
°C/W
RθJC
RθJA
62.5
ELECTRICAL CHARACTERISTICS (Per Leg)
TA = 25°C unless otherwise noted
MBR10100CT MBR10150CT
MBR10200CT
Test Condition
Symbol
Parameter
Units
(Note 1)
Min
---
Max
100
Min
---
Max
100
Min
---
Max
100
IR
Reverse Current
Forward Voltage
@ rated VR
IF = 5A
μA
0.85
0.95
0.92
1.00
1.00
1.25
VF
---
---
---
V
IF = 10A
Note/s:
1. Tested under pulse condition of 300μS.
Number: DB-027
March 2010 Release, Revision F
Page 1
TAK CHEONG®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Figure 2. Junction Capacitance (Per Diode)
Figure 1. Forward Current Derating Curve (Per Diode)
10
1000.0
100.0
10.0
f = 1MHz
Ta = 25
℃
8
6
4
2
0
MBR10100CT
MBR10150CT
MBR10200CT
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
Tc - Case Temperature [
]
℃
Reverse Voltage [V]
Figure 3. MBR10100CTTypical Reverse Current (Per Diode)
Figure 4. MBR10150CTTypical Reverse Current (Per Diode)
10000.000
1000.000
Ta= 150
℃
1000.000
100.000
10.000
1.000
Ta= 150
℃
Ta=125
℃
Ta=125
℃
100.000
10.000
1.000
Ta=75
℃
Ta=75
℃
0.100
0.100
0.010
Ta=25
℃
Ta=25
℃
0.010
0.001
0
10
20
30
40
50
60
70
80
90 100
0
15
30
45
60
75
90
105
120 135
150
VR - Reverse Voltage [V]
VR - Reverse Voltage [V]
Figure 6. MBR10100CT Typical Forward Voltage (Per Diode)
Figure 5. MBR10200CTTypical Reverse Current (Per Diode)
10
1000.000
100.000
10.000
1.000
Ta= 150
℃
Ta=150
℃
Ta=125
℃
1
Ta=125
℃
Ta=75
℃
Ta=75
0.100
0.1
Ta=25
℃
0.010
Ta=25
℃
0.001
0.01
0
10
20
30
40
50
60
70
80
90
100
0
0.2
0.4
0.6
0.8
1
VR - Reverse Voltage [V]
VF- Instantaneous Forward Voltage [V]
Number: DB-027
March 2010 Release, Revision F
Page 2
TAK CHEONG®
SEMICONDUCTOR
Figure 7. MBR10150CT Typical Forward Voltage (Per Diode)
Figure 8. MBR10200CT Typical Forward Voltage (Per Diode)
10
10
1
1
Ta=150
℃
Ta=150
℃
Ta=125
℃
Ta=125
℃
Ta=75
℃
Ta=75
℃
0.1
0.1
Ta=25
℃
Ta=25
℃
0.01
0.01
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
VF- Instantaneous Forward Voltage [V]
VF- Instantaneous Forward Voltage [V]
TO220 PACKAGE OUTLINE
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
A1
A2
b
3.60
1.20
2.03
0.40
1.20
0.36
14.22
2.34
9.70
5.84
12.70
2.70
3.50
2.54
4.80
1.40
2.90
1.00
1.78
0.60
16.50
2.74
10.60
6.85
14.70
3.30
4.00
3.40
0.142
0.047
0.080
0.016
0.047
0.014
0.560
0.092
0.382
0.230
0.500
0.106
0.138
0.100
0.189
0.055
0.114
0.039
0.070
0.024
0.650
0.108
0.417
0.270
0.579
0.130
0.157
0.134
b2
c
D
e
E
H1
L
L1
ØP
Q
NOTE: Above package outline conforms to JEDEC TO-220AB.
Number: DB-027
March 2010 Release, Revision F
Page 3
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
相关型号：
MBR10100CT-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3
SENSITRON
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