MBRF20100CT [TAK_CHEONG]
20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier; 20A的肖特基二极管全包高压肖特基整流器
| 型号： | MBRF20100CT |
| 厂家： | 
Tak Cheong Electronics (Holdings) Co.,Ltd |
| 描述： | 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TAK CHEONG®
SEMICONDUCTOR
20A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
1
Specification Features:
2
3
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
TO-220FP
DEVICE MARKING DIAGRAM
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 20xxxCT
Line 4 = Polarity
L xxyy
Line 2
Line 3
Line 4
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
POLARITY CONFIGURATION
1. Anode
3. Anode
2. Cathode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBRF20100CT
MBRF20150CT
MBRF20200CT
Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Per Leg
Per Package
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
100
150
200
V
IF(AV)
10
20
A
A
IFSM
150
TSTG
TJ
Storage Temperature Range
-65 to +150
+150
°C
°C
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
TA = 25°C unless otherwise noted
Symbol
Parameter
Maximum Thermal Resistance, Junction-to-Case
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
Value
Units
2.0
60
°C/W
°C/W
RθJC
RθJA
ELECTRICAL CHARACTERISTICS (Per Diode )
TA = 25°C unless otherwise noted
MBRF20100CT MBRF20150CT
MBRF20200CT
Test Condition
Symbol
Parameter
Units
(Note 1)
Min
---
Max
200
Min
---
Max
200
Min
---
Max
200
IR
Reverse Current
Forward Voltage
@ rated VR
IF = 10A
μA
0.85
0.95
0.92
1.00
1.00
1.25
VF
---
---
---
V
IF = 20A
Note/s:
1. Tested under pulse condition of 300μS.
Number: DB-151
March 2010, Revision D
Page 1
TAK CHEONG®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Figure 2. Junction Capacitance (Per Diode)
Figure 1. Forward Current Derating Curve (Per Diode)
20
1000.0
100.0
10.0
f = 1MHz
Ta = 25
℃
16
12
8
MBRF20100CT
MBRF20150CT
MBRF20200CT
4
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
Tc - Case Temperature [
]
℃
Reverse Voltage [V]
Figure 4. MBRF20150CT Typical Reverse Current (Per Diode)
Figure 3. MBRF20100CT Typical Reverse Current (Per Diode)
10000.000
10000.000
Ta= 150
℃
1000.000
1000.000
100.000
10.000
1.000
Ta= 150
℃
Ta=125
℃
100.000
10.000
1.000
Ta=125
℃
Ta=75
℃
Ta=75
℃
0.100
Ta=25
℃
0.100
Ta=25
0.010
℃
0.001
0.010
0
15
30
45
60
75
90
105 120 135 150
0
10
20
30
40
50
60
70
80
90
100
VR - Reverse Voltage [V]
VR - Reverse Voltage [V]
Figure 5. MBRF20200CT Typical Reverse Current (Per Diode)
Figure 6. MBRF20100CT Typical Forward Voltage (Per Diode)
10000.000
100
1000.000
Ta= 150
℃
10
100.000
10.000
1.000
Ta=125
℃
Ta=150
℃
1
Ta=75
℃
Ta=125
℃
0.100
Ta=75
℃
0.1
Ta=25
Ta=25
℃
0.010
℃
0.01
0.001
0
0.2
0.4
0.6
0.8
1
0
20
40
60
80
100
120
140
160
180
200
VR - Reverse Voltage [V]
VF- Instantaneours Forward Voltage [V]
Number: DB-151
March 2010, Revision D
Page 2
TAK CHEONG®
SEMICONDUCTOR
Figure 7. MBRF20150CT Typical Forward Voltage (Per Diode)
Figure 8. MBRF20200CT Typical Forward Voltage (Per Diode)
100
100
10
10
Ta=150
℃
1
0.1
1
Ta=150
℃
Ta=125
℃
Ta=125
℃
Ta=75
℃
0.1
Ta=75
℃
Ta=25
Ta=25
℃
℃
0.01
0.01
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
VF - Instantaneous Forward Voltage [V]
VF- Instantaneous Forward Voltage [V]
TO220FP SG PACKAGE OUTLINE
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A1
A2
A4
b
2.7
15.0
6.2
0.5
0.9
1.0
0.4
9.8
2.34
4.3
2.5
2.6
10.3
3.0
2.3
3.3
15.7
6.6
0.106
0.591
0.244
0.020
0.035
0.039
0.016
0.386
0.092
0.169
0.098
0.102
0.406
0.118
0.091
0.130
0.618
0.260
0.035
0.047
0.047
0.024
0.406
0.108
0.181
0.114
0.118
0.421
0.134
0.106
0.9
b1
b2
c
1.2
1.2
0.6
D
10.3
2.74
4.6
e
E
E1
F
2.9
3.0
L
10.7
3.4
ØP
Q
2.7
Number: DB-151
March 2010, Revision D
Page 3
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
相关型号：
MBRF20100CTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
LITTELFUSE
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