PH1N4448TB [TAK_CHEONG]
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | PH1N4448TB |
| 厂家： | 
Tak Cheong Electronics (Holdings) Co.,Ltd |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
| 文件： | 总6页 (文件大小：694K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
Licensed by NXP Semiconductor
500 mW SOD27 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
VRRM
VR
Power Dissipation
500
100
mW
V
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
100
V
IF
Continuous Forward Current(see Fig. 2)
Repetitive Peak Forward Current
Storage Temperature Range
200
mA
mA
°C
°C
IFRM
TSTG
TJ
450
-65 to +200
+200
Operating Junction Temperature
Non-Repetitive Peak Forward Current
Pulse Width :
(see Fig.4)
1.0 µs
1.0 ms
1.0 s
4
1
0.5
A
A
A
IFSM
Device mounted on an FR4 printed-circuit board; lead length 10 mm
Specification Features:
§ Fast Switching Device (TRR <4.0 nS)
§ SOD27(DO-35) Package
§ Through-Hole Device Type Mounting
§ Hermetically Sealed Glass
§ Compression Bonded Construction
§ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
§ RoHS Compliant and Halogen Free
§ Solder Hot Dip Tin (Sn) Terminal Finish
§ Cathode Indicated By Polarity Band
Electrical CharacteristicsTA = 25°C unless otherwise noted
Limits
Unit
Symbol
Parameter
Test Condition
Min
Max
VF
Forward Voltage
(see Fig.3)
PH1N4148 IF=10mA
PH1N4448 IF=5mA
1.0
0.72
1.0
0.62
V
PH1N4448 IF=100mA
IR
Reverse Current
(see Fig.5)
PH1N4148/PH1N4448 VR=20V
25
50
3
nA
µA
µA
PH1N4148/PH1N4448
PH1N4448
VR=20V,Tj=150℃
VR=20V,Tj=100℃
C
Capacitance (see Fig.6)
VR=0V, f=1MHZ
4
4
pF
TRR
Reverse Recovery Time
(see Fig.7)
when switched from IF=10mA to
IR=60mA;RL=100W
ns
measured at IR=1mA
Vfr
Forward Recovery Voltage(see Fig.8)
when switched from IF=50mA,
Tr=20ns
2.5
V
Rth(j-tp)
Rth(j-a)
Thermal Resistance Form Junction To Tie-Point
Thermal Resistance Form Junction To Ambient
Lead Length 10mm
Lead Length 10mm
240
350
K/W
K/W
Number: DB-271
Mar.2015/B
Page 1
®
Licensed by NXP Semiconductor
Typical Characteristics
Number: DB-271
Mar.2015/B
Page 2
®
Licensed by NXP Semiconductor
Number: DB-271
Mar.2015/B
Page 3
®
Licensed by NXP Semiconductor
Number: DB-271
Mar.2015/B
Page 4
®
Licensed by NXP Semiconductor
Package Outline
Package
Case Outline
SOD27(DO-35)
DO-35
DIM
Millimeters
Inches
Min
Max
Min
Max
0.46
3.05
0.56
4.25
0.018
0.120
1.000
0.060
0.022
0.167
1.500
0.073
A
B
C
D
25.40
1.53
38.10
1.85
Notes:
1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
Number: DB-271
Mar.2015/B
Page 5
®
Licensed by NXP Semiconductor
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of
with would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong
Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers
resulting from such improper use of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please
visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further
assistance.
Number: DB-271
Mar.2015/B
Page 6
相关型号：
PH1N4448TR
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
TAK_CHEONG
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