TC1N4448M3.TR [TAK_CHEONG]
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, HERMETIC SEALED, GLASS, DO-204, 2 PIN;型号: | TC1N4448M3.TR |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, HERMETIC SEALED, GLASS, DO-204, 2 PIN 整流二极管 |
文件: | 总6页 (文件大小:153K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
TAK CHEONG
SEMICONDUCTOR
500 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO34
DEVICE MARKING DIAGRAM
Absolute Maximum Ratings TA = 25°C unless otherwise noted
(TC1N4148M)
Symbol
Parameter
Value
Units
PD
TSTG
TJ
Power Dissipation
500
-65 to +200
+175
75
mW
°C
°C
V
Storage Temperature Range
Operating Junction Temperature
Working Inverse Voltage
L
: Logo
WIV
IO
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)
Average Rectified Current
150
mA
mA
A
IFM
Non-repetitive Peak Forward Current
Peak Forward Surge Current
450
IFSURGE
2
These ratings are limiting values above which the serviceability of the diode may be impaired.
L
: Logo
Device Code : TC1NxxxxM
Specification Features:
Fast Switching Device (TRR <4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
DEVICE MARKING DIAGRAM
(TC1N4148M)
Anode
Cathode
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
ELECTRICAL SYMBOL
Electrical Characteristics
TA = 25°C unless otherwise noted
Limits
Symbol
Parameter
Test Condition
IR=100µA
Unit
Min
100
75
Max
BV
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Volts
IR=5µA
IR
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
25
5
nA
µA
VF
TC1N4448M, TC1N914BM
TC1N4148M, TC1N4148M
TC1N4448M, TC1N914BM
0.62
0.72
1.0
1.0
Volts
TRR
Reverse Recovery Time
Capacitance
IF=10mA, VR=6V
RL=100Ω
4
4
nS
pF
IRR=1mA
C
VR=0V, f=1MHZ
October 2005 / B
Page 1
®
TAK CHEONG
SEMICONDUCTOR
Electrical Symbol Definition
Typical Characteristics
I
Symbol
Parameter
(mA)
IF
BV
IR
Breakdown Voltage @ IR
Reverse Leakage Current @ VR
Reverse Voltage
(mV)
BV
VR
V
IR
IR
VF
(V)
VR
IF
Forward Current
(nA)
VF
Forward Voltage @ IF
(µA)
Ordering Information
Device
Package
Bulk
Quantity
10,000
5,000
TC1NxxxxM
TC1NxxxxM.TB
TC1NxxxxM.TR
TC1NxxxxM
Tape and Ammo
Tape and Reel
10,000
Others (…contact Tak Cheong sales representatives)
Axial-Lead Tape Packaging Standards
This axial-lead component’s packaging requirements use in automatic testing and assembly equipment. And this standard practices for
lead-tape packaging of axial-lead components meets the requirements of EIA Standard RS-296-D “Lead-taping of Components on Axial
Lead Configuration for Automatic Insertion”.
October 2005 / B
Page 2
®
TAK CHEONG
SEMICONDUCTOR
Tape & Reel Packaging Information
Tape & Reel
Outline
DIM
D1
Millimeters
356
30
D2
Reel Dimensions
D3
84
W1
77.5
PKG Type
DO-34
Quantity Per Reel
Quantity Per Reel
10,000
October 2005 / B
Page 3
®
TAK CHEONG
SEMICONDUCTOR
Tape & Ammo Packaging Information
Tape & Ammo
Outline
250mm x 80mm x 80mm
PKG Type
DO-34
Quantity Per Box
Quantity Per Ammo
Box
5,000
Taping Dimensions
Description
Standard Width
Millimeters
26
52
Tape Spacing (B)
Component Pitch (C)
Untaped Lead (L1 – L2)
Glass Offset (F)
52 ± 0.69
26 +0.5 / -0
5.08 ± 0.4
± 0.69
5.08 ± 0.4
± 0.69
± 0.69
± 0.69
Bent (D)
1.2 Max
6.138 ± 0.576
0.55 Max
3.2 Min
0
1.2 Max
6.138 ± 0.576
0.55 Max
3.2 Min
0
Tape Width (G)
Tape Mismatch (E)
Taped Lead (G)
Lead Beyond Tape (H)
October 2005 / B
Page 4
®
TAK CHEONG
SEMICONDUCTOR
Bulk Packaging Information
Plastic Bag
Quantity Per Plastic Bag
DO-34 1000 x 10 Plastic Bag
Bulk Outline
250mm x 80mm x 80mm
PKG Type
DO-34
Quantity Per Box
Quantity Per Box
10,000
October 2005 / B
Page 5
®
TAK CHEONG
SEMICONDUCTOR
Package Outline
Package
Case Outline
DO-34
DO-34
DIM
Millimeters
Inches
Min
Max
Min
Max
0.46
2.16
0.55
3.04
0.018
0.085
1.000
0.050
0.022
0.120
1.500
0.075
A
B
C
D
25.40
1.27
38.10
1.90
Notes:
1. All dimensions are within JEDEC standard.
2. DO34 polarity denoted by cathode band.
October 2005 / B
Page 6
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