TC1N914BTR [TAK_CHEONG]

Rectifier Diode,;
TC1N914BTR
型号: TC1N914BTR
厂家: Tak Cheong Electronics (Holdings) Co.,Ltd    Tak Cheong Electronics (Holdings) Co.,Ltd
描述:

Rectifier Diode,

文件: 总4页 (文件大小:424K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TAK CHEONG
®  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
500  
mW  
°C  
DEVICE MARKING DIAGRAM  
TSTG  
Storage Temperature Range  
-65 to +150  
L
xx  
xx  
TJ  
WIV  
IO  
Operating Junction Temperature  
Working Inverse Voltage  
+150  
75  
°C  
V
Average Rectified Current  
150  
450  
mA  
mA  
L
: Logo  
TC1Nxxxx : Device Code  
IFM  
Non-repetitive Peak Forward Current  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
.
.
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Parameter  
Test Condition  
IR=100µA  
Symbol  
Unit  
Min  
100  
75  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
Volts  
IR=5µA  
IR  
VR=20V  
VR=75V  
IF=5mA  
IF=10mA  
IF=100mA  
25  
5
nA  
µA  
VF  
TC1N4448, TC1N914B  
TC1N4148  
0.62  
0.72  
1.0  
1.0  
Volts  
TC1N4448, TC1N914B  
TRR  
Reverse Recovery Time  
Capacitance  
IF=10mA, VR=6V  
RL=100  
4
4
nS  
pF  
IRR=1mA  
C
VR=0V, f=1MHZ  
Number: DB-036  
Jan 2010 / G  
Page 1  
TAK CHEONG
®  
SEMICONDUCTOR  
Typical Characteristics  
500  
400  
300  
200  
100  
0
1.5  
1.0  
0.5  
0.0  
f = 1MHz  
Ta = 25  
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
150  
175  
Temperature [  
]
VR - Reverse Voltage [V]  
Figure 1. Power Dissipation vs Ambient Temperature  
Valid provided leads at a distance of 0.8mm from case are kept at  
ambient temperature  
Figure 2. Total Capacitance  
60  
160  
Ta=25  
Ta=25  
50  
40  
30  
150  
140  
130  
120  
110  
20  
10  
0
1
10  
100  
10  
100  
IR - Reverse Current [uA]  
VR - Reverse Voltage [V]  
Figure 3. Reverse Voltage vs Reverse Current  
BV – 1.0uA to 100uA  
Figure 4. Reverse Current vs Reverse Voltage  
IR – 10V to 100V  
1500  
1000  
800  
600  
400  
200  
0
1400  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
Ta=25  
Ta= -40  
Ta=25  
Ta=65  
Ta=125  
400  
300  
200  
100  
0.001  
0.100  
10.000  
1000.000  
0.01  
0.1  
1
10  
100  
IF - Forward Current [mA]  
IF - Forward Current (mA)  
Figure 5. Forward Voltage vs Forward Current  
VF – 0.001mA to 800mA  
Figure 6. Forward Voltage vs Ambient Temperature  
VF – 0.01mA to 100mA (-40 to +125 Deg C)  
Number: DB-036  
Jan 2010 / G  
Page 2  
TAK CHEONG
®  
SEMICONDUCTOR  
Package Outline  
Package  
Case Outline  
DO-35  
DO-35  
DIM  
Millimeters  
Inches  
Min  
Max  
Min  
Max  
0.46  
3.05  
0.55  
4.00  
0.018  
0.120  
1.000  
0.060  
0.022  
0.157  
1.500  
0.079  
A
B
C
D
25.40  
1.53  
38.10  
2.00  
Notes:  
1. All dimensions are within JEDEC standard.  
2. DO35 polarity denoted by cathode band.  
Number: DB-036  
Jan 2010 / G  
Page 3  
TAK CHEONG ®  
DISCLAIMER NOTICE  
NOTICE  
The information presented in this document is for reference only. Tak Cheong reserves the right to make  
changes without notice for the specification of the products displayed herein.  
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not  
designed to be used with equipment or devices which require high level of reliability and the malfunction of with  
would directly endanger human life (such as medical instruments, transportation equipment, aerospace  
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor  
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such  
improper use of sale.  
This publication supersedes & replaces all information reviously supplied. For additional information, please visit  
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.  
Number: DB-100  
April 14, 2008 / A  

相关型号:

TC1N914BW

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
TAK_CHEONG

TC1N914BWS

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SC-90, 2 PIN
TAK_CHEONG

TC1N914BWT

200mW SOD-523 SURFACE MOUNT Fast Switching Diode
TAK_CHEONG

TC1N914BXXXX

500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes
ETC

TC1N957A

暂无描述
TAK_CHEONG

TC1N957A.TB26

Zener Diode, 6.8V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
TAK_CHEONG

TC1N957A.TR

Zener Diode, 6.8V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
TAK_CHEONG

TC1N957B

500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
TAK_CHEONG

TC1N957B.T26B

Zener Diode,
TAK_CHEONG

TC1N957B.TB

Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
TAK_CHEONG

TC1N957B.TR

Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
TAK_CHEONG

TC1N957B_10

500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
TAK_CHEONG