TC3V9.TR [TAK_CHEONG]

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TC3V9.TR
型号: TC3V9.TR
厂家: Tak Cheong Electronics (Holdings) Co.,Ltd    Tak Cheong Electronics (Holdings) Co.,Ltd
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稳压器 二极管 齐纳二极管 测试
文件: 总5页 (文件大小:172K)
中文:  中文翻译
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TAK CHEONG ®  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
DEVICE MARKING DIAGRAM  
Parameter  
Value  
Units  
Power Dissipation  
500  
-65 to +175  
+175  
mW  
°C  
L
xx  
x
Storage Temperature Range  
Operating Junction Temperature  
°C  
L
: Logo  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Device Code : TCxxx  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Zener Voltage Range 2.0 to 75 Volts  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
ZZT @ IZT  
(Ω)  
Max  
IR @ VR  
(μA)  
Max  
VZ @ IZT  
(Volts)  
Nominal  
IZT  
(mA)  
VR  
(Volts)  
Device Type  
TC2V0  
TC2V2  
TC2V4  
TC2V7  
TC3V0  
TC3V3  
TC3V6  
TC3V9  
TC4V3  
TC4V7  
TC5V1  
TC5V6  
TC6V2  
TC6V8  
TC7V5  
TC8V2  
TC9V1  
TC10V  
TC11V  
TC12V  
2.0  
2.2  
2.4  
2.7  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100  
100  
100  
110  
120  
120  
100  
100  
100  
80  
80  
60  
60  
20  
20  
20  
25  
30  
120  
120  
120  
100  
50  
20  
10  
5
5
5
5
5
0.5  
0.7  
1
1
1
1
1
1
1
1
1.5  
2.5  
3
3.5  
4
5
6
7
8
5
2
0.5  
0.5  
0.5  
0.2  
0.2  
0.2  
11  
12  
30  
30  
9
Number: DB-035  
June 2008 / E  
Page 1  
TAK CHEONG ®  
SEMICONDUCTOR  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
ZZT @ IZT  
(Ω)  
Max  
IR @ VR  
(μA)  
Max  
VZ @ IZT  
(Volts)  
Nominal  
IZT  
(mA)  
VR  
(Volts)  
Device Type  
TC13V  
TC15V  
TC16V  
TC18V  
TC20V  
TC22V  
TC24V  
TC27V  
TC30V  
TC33V  
TC36V  
TC39V  
TC43V  
TC47V  
TC51V  
TC56V  
TC62V  
TC68V  
TC75V  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
35  
40  
40  
45  
45  
30  
35  
45  
55  
65  
75  
85  
90  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
10  
11  
12  
13  
15  
17  
19  
21  
23  
25  
27  
30  
33  
36  
39  
43  
47  
51  
56  
90  
110  
110  
201  
230  
240  
VF Forward Voltage = 1.2 V Maximum @ IF = 200 mA for all types  
Notes:  
1. TOLERANCE AND VOLTAGE DESIGNATION  
The type numbers listed have zener voltage as shown and have a standard tolerance on the nominal zener voltage of ±5%.  
2. SPECIALS AVAILABLE INCLUDE  
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,  
contact you nearest Tak Cheong representative.  
3. ZENER VOLTAGE (VZ) MEASUREMENT  
The zener voltage is measured under pulse conditions such that TJ is no more than 2above TA.  
4. ZENER IMPEDANCE (ZZ) DERIVATION  
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the  
dc zener current (IZT) is superimposed to IZT  
.
Number: DB-035  
June 2008 / E  
Page 2  
TAK CHEONG ®  
SEMICONDUCTOR  
Typical Characteristics  
1000  
100  
10  
600  
500  
400  
300  
200  
100  
0
f = 1MHz  
Ta = 25  
VR = 0V  
VR = 2V  
VR = 5V  
VR = 20V  
VR = 30V  
1
0
20  
40  
60  
80  
0
40  
80  
120  
160  
200  
Temperature [  
]
VZ - Reverse Voltage [V]  
Figure 1. Power Dissipation vs Ambient Temperature  
Valid provided leads at a distance of 0.8mm from case are kept at  
ambient temperature  
Figure 2. Total Capacitance  
1000  
100  
10  
1000  
Iz=1mA  
Ta = 25  
Ta = 25  
Iz=2mA  
Iz=5mA  
100  
10  
1
Iz=10mA  
1
0.1  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1
10  
100  
VZ - Reverse Voltage [V]  
VF - Forward Voltage [mV]  
Figure 4. Forward Current vs. Forward Voltage  
Figure 3. Differential Impedance vs. Zener Voltage  
300  
100  
PD = 500mW  
PD = 500mW  
Ta = 25  
250  
200  
150  
100  
50  
Ta = 25  
10  
1
0.1  
0.01  
0
15  
25  
35  
45  
55  
65  
75  
0
2
4
6
8
10  
VZ - Reverse Voltage [V]  
VZ - Reverse Voltage [V]  
Figure 5. Reverse Current vs. Reverse Voltage  
Figure 6. Reverse Current vs. Reverse Voltage  
Number: DB-035  
June 2008 / E  
Page 3  
TAK CHEONG ®  
SEMICONDUCTOR  
Package Outline  
Package  
Case Outline  
DO-35  
DO-35  
DIM  
Millimeters  
Inches  
Min  
Max  
Min  
Max  
A
B
C
D
0.46  
3.05  
0.55  
5.08  
0.018  
0.120  
1.000  
0.060  
0.022  
0.200  
1.500  
0.090  
25.40  
1.53  
38.10  
2.28  
Notes:  
1. All dimensions are within JEDEC standard.  
2. DO35 polarity denoted by cathode band.  
Number: DB-035  
June 2008 / E  
Page 4  
TAK CHEONG ®  
DISCLAIMER NOTICE  
NOTICE  
The information presented in this document is for reference only. Tak Cheong reserves the right to make  
changes without notice for the specification of the products displayed herein.  
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not  
designed to be used with equipment or devices which require high level of reliability and the malfunction of with  
would directly endanger human life (such as medical instruments, transportation equipment, aerospace  
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor  
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such  
improper use of sale.  
This publication supersedes & replaces all information reviously supplied. For additional information, please visit  
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.  
Number: DB-100  
April 14, 2008 / A  

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