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TCBZX55C3V9TA2 [TAK_CHEONG]

Zener Diode,;
TCBZX55C3V9TA2
型号： TCBZX55C3V9TA2
厂家： Tak Cheong Electronics (Holdings) Co.,Ltd    Tak Cheong Electronics (Holdings) Co.,Ltd
描述：

Zener Diode,
文件： 总6页 (文件大小：186K)
中文：  中文翻译
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®
TAK CHEONG  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Parameter  
Value  
Units  
DEVICE MARKING DIAGRAM  
Power Dissipation  
500  
-65 to +175  
+175  
mW  
°C  
L
55T  
xxx  
Storage Temperature Range  
Operating Junction Temperature  
°C  
L
: Logo  
Device Code : TCBZX55Txxx  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
T
: VZ tolerance B or C  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Zener Voltage Range 2.0 to 75 Volts  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
VZ @ IZT  
Z
ZT @ IZT  
(Ω)  
Max  
Z
ZK @ IZK  
(Ω)  
Max  
IR @ VR  
(μA)  
IZT  
(mA)  
IZK  
(mA)  
VR  
(Volts)  
Device Type  
(Volts)  
Max  
Min  
1.88  
2.08  
2.28  
2.51  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
Max  
2.11  
2.33  
2.56  
2.89  
3.2  
3.5  
3.8  
4.1  
4.6  
5.0  
5.4  
6.0  
6.6  
7.2  
7.9  
8.7  
9.6  
TCBZX55C 2V0  
TCBZX55C 2V2  
TCBZX55C 2V4  
TCBZX55C 2V7  
TCBZX55C 3V0  
TCBZX55C 3V3  
TCBZX55C 3V6  
TCBZX55C 3V9  
TCBZX55C 4V3  
TCBZX55C 4V7  
TCBZX55C 5V1  
TCBZX55C 5V6  
TCBZX55C 6V2  
TCBZX55C 6V8  
TCBZX55C 7V5  
TCBZX55C 8V2  
TCBZX55C 9V1  
TCBZX55C 10  
TCBZX55C 11  
TCBZX55C 12  
TCBZX55C 13  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100  
100  
85  
85  
85  
85  
85  
85  
75  
60  
35  
25  
10  
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
550  
450  
200  
150  
50  
100  
100  
50  
10  
4
2
2
2
1
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
7
7
50  
50  
70  
70  
90  
110  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
10  
15  
20  
20  
26  
9.4  
10.6  
11.6  
12.7  
14.1  
10.4  
11.4  
12.4  
Number: DB-034  
June 2008 / F  
Page 1  
®
TAK CHEONG  
SEMICONDUCTOR  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
VZ @ IZT  
ZZT @ IZT  
(Ω)  
Max  
ZZK @ IZK  
(Ω)  
IR @ VR  
(μA)  
Max  
IZT  
(mA)  
IZK  
(mA)  
VR  
(Volts)  
Device Type  
(Volts)  
Max  
Min  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
64  
70  
Max  
15.6  
17.1  
19.1  
21.1  
23.3  
25.6  
28.9  
32  
35  
38  
41  
46  
50  
54  
60  
66  
72  
80  
TCBZX55C 15  
TCBZX55C 16  
TCBZX55C 18  
TCBZX55C 20  
TCBZX55C 22  
TCBZX55C 24  
TCBZX55C 27  
TCBZX55C 30  
TCBZX55C 33  
TCBZX55C 36  
TCBZX55C 39  
TCBZX55C 43  
TCBZX55C 47  
TCBZX55C 51  
TCBZX55C 56  
TCBZX55C 62  
TCBZX55C 68  
TCBZX55C 75  
5
5
30  
40  
1
1
1
1
1
1
1
1
1
110  
170  
170  
220  
220  
220  
220  
220  
220  
220  
500  
600  
700  
700  
1000  
1000  
1000  
1000  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
28  
32  
35  
38  
42  
47  
51  
56  
5
50  
5
55  
5
55  
5
80  
5
80  
5
80  
5
80  
5
80  
1
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
90  
90  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
110  
125  
135  
150  
160  
170  
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types  
VZ @ IZT  
(Volts)  
Z
ZT @ IZT  
(Ω)  
Max  
Z
ZK @ IZK  
(Ω)  
Max  
IR @ VR  
(μA)  
Max  
IZT  
(mA)  
IZK  
(mA)  
VR  
(Volts)  
Device Type  
Min  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5.00  
5.49  
6.08  
6.66  
7.33  
8.04  
8.92  
9.80  
10.78  
11.76  
12.74  
14.70  
15.68  
17.64  
19.60  
21.56  
23.52  
26.46  
29.40  
32.34  
35.28  
38.22  
42.14  
46.06  
Max  
TCBZX55B 2V4  
TCBZX55B 2V7  
TCBZX55B 3V0  
TCBZX55B 3V3  
TCBZX55B 3V6  
TCBZX55B 3V9  
TCBZX55B 4V3  
TCBZX55B 4V7  
TCBZX55B 5V1  
TCBZX55B 5V6  
TCBZX55B 6V2  
TCBZX55B 6V8  
TCBZX55B 7V5  
TCBZX55B 8V2  
TCBZX55B 9V1  
TCBZX55B 10  
TCBZX55B 11  
TCBZX55B 12  
TCBZX55B 13  
TCBZX55B 15  
TCBZX55B 16  
TCBZX55B 18  
TCBZX55B 20  
TCBZX55B 22  
TCBZX55B 24  
TCBZX55B 27  
TCBZX55B 30  
TCBZX55B 33  
TCBZX55B 36  
TCBZX55B 39  
TCBZX55B 43  
TCBZX55B 47  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.20  
5.71  
6.32  
6.94  
7.63  
8.36  
9.28  
10.20  
11.22  
12.24  
13.26  
15.30  
16.32  
18.36  
20.40  
22.44  
24.48  
27.54  
30.60  
33.66  
36.72  
39.78  
43.86  
47.94  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5  
2.5  
2.5  
85  
85  
85  
85  
85  
85  
75  
60  
35  
25  
10  
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5  
0.5  
0.5  
600  
600  
600  
600  
600  
600  
600  
600  
550  
450  
200  
150  
50  
50  
10  
4
2
2
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2  
6.8  
7.5  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
28  
32  
35  
2
1
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
7
7
50  
50  
70  
70  
10  
15  
20  
20  
26  
30  
40  
50  
55  
55  
80  
80  
80  
80  
80  
90  
90  
110  
90  
110  
110  
170  
170  
220  
220  
220  
220  
220  
220  
220  
500  
600  
700  
Number: DB-034  
June 2008 / F  
Page 2  
®
TAK CHEONG  
SEMICONDUCTOR  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
VZ @ IZT  
ZZT @ IZT  
(Ω)  
ZZK @ IZK  
(Ω)  
Max  
IR @ VR  
(μA)  
Max  
IZT  
IZK  
(mA)  
VR  
(Volts)  
Device Type  
(Volts)  
(mA)  
Max  
Min  
Max  
TCBZX55B 51  
TCBZX55B 56  
TCBZX55B 62  
TCBZX55B 68  
TCBZX55B 75  
49.98  
54.88  
60.76  
66.64  
73.50  
52.02  
57.12  
63.24  
69.36  
76.50  
2.5  
2.5  
2.5  
2.5  
2.5  
125  
135  
150  
160  
170  
0.5  
0.5  
0.5  
0.5  
0.5  
700  
0.1  
0.1  
0.1  
0.1  
0.1  
38  
42  
47  
51  
56  
1000  
1000  
1000  
1000  
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types  
Notes:  
1. TOLERANCE AND VOLTAGE DESIGNATION  
The type numbers listed have zener voltage as shown.  
2. SPECIALS AVAILABLE INCLUDE  
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,  
contact you nearest Tak Cheong representative.  
3. ZENER VOLTAGE (VZ) MEASUREMENT  
The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA.  
4. ZENER IMPEDANCE (ZZ) DERIVATION  
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the  
dc zener current (IZT) is superimposed to IZT  
.
Number: DB-034  
June 2008 / F  
Page 3  
®
TAK CHEONG  
SEMICONDUCTOR  
Typical Characteristics  
1000  
100  
10  
600  
500  
400  
300  
200  
100  
0
f = 1MHz  
Ta = 25  
℃
VR = 0V  
VR = 2V  
VR = 5V  
VR = 20V  
VR = 30V  
1
0
20  
40  
60  
80  
0
40  
80  
120  
160  
200  
Temperature [  
]
VZ - Reverse Voltage [V]  
℃
Figure 1. Power Dissipation vs Ambient Temperature  
Valid provided leads at a distance of 0.8mm from case are kept at  
ambient temperature  
Figure 2. Total Capacitance  
1000  
100  
10  
1000  
Iz=1mA  
Ta = 25  
℃
Ta = 25  
℃
Iz=2mA  
Iz=5mA  
100  
10  
1
Iz=10mA  
1
0.1  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1
10  
100  
VZ - Reverse Voltage [V]  
VF - Forward Voltage [mV]  
Figure 4. Forward Current vs. Forward Voltage  
Figure 3. Differential Impedance vs. Zener Voltage  
300  
100  
PD = 500mW  
PD = 500mW  
Ta = 25  
250  
200  
150  
100  
50  
Ta = 25  
℃
℃
10  
1
0.1  
0.01  
0
15  
25  
35  
45  
55  
65  
75  
0
2
4
6
8
10  
VZ - Reverse Voltage [V]  
VZ - Reverse Voltage [V]  
Figure 5. Reverse Current vs. Reverse Voltage  
Figure 6. Reverse Current vs. Reverse Voltage  
Number: DB-034  
June 2008 / F  
Page 4  
®
TAK CHEONG  
SEMICONDUCTOR  
Package Outline  
Package  
Case Outline  
DO-35  
DO-35  
DIM  
Millimeters  
Inches  
Min  
Max  
Min  
Max  
A
B
C
D
0.46  
3.05  
0.55  
5.08  
0.018  
0.120  
1.000  
0.060  
0.022  
0.200  
1.500  
0.090  
25.40  
1.53  
38.10  
2.28  
Notes:  
1. All dimensions are within JEDEC standard.  
2. DO35 polarity denoted by cathode band.  
Number: DB-034  
June 2008 / F  
Page 5  
TAK CHEONG ®  
DISCLAIMER NOTICE  
NOTICE  
The information presented in this document is for reference only. Tak Cheong reserves the right to make  
changes without notice for the specification of the products displayed herein.  
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not  
designed to be used with equipment or devices which require high level of reliability and the malfunction of with  
would directly endanger human life (such as medical instruments, transportation equipment, aerospace  
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor  
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such  
improper use of sale.  
This publication supersedes & replaces all information reviously supplied. For additional information, please visit  
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.  
Number: DB-100  
April 14, 2008 / A  

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