TCBZX55C56TA2 概述
Zener Diode, 齐纳二极管
TCBZX55C56TA2 规格参数
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.8 | Base Number Matches: | 1 |
TCBZX55C56TA2 数据手册
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TAK CHEONG
SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter
Value
Units
DEVICE MARKING DIAGRAM
Power Dissipation
500
-65 to +175
+175
mW
°C
L
55T
xxx
Storage Temperature Range
Operating Junction Temperature
°C
L
: Logo
Device Code : TCBZX55Txxx
These ratings are limiting values above which the serviceability of the diode may be impaired.
T
: VZ tolerance B or C
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Cathode
Anode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ @ IZT
Z
ZT @ IZT
(Ω)
Max
Z
ZK @ IZK
(Ω)
Max
IR @ VR
(μA)
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
(Volts)
Max
Min
1.88
2.08
2.28
2.51
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
Max
2.11
2.33
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
TCBZX55C 2V0
TCBZX55C 2V2
TCBZX55C 2V4
TCBZX55C 2V7
TCBZX55C 3V0
TCBZX55C 3V3
TCBZX55C 3V6
TCBZX55C 3V9
TCBZX55C 4V3
TCBZX55C 4V7
TCBZX55C 5V1
TCBZX55C 5V6
TCBZX55C 6V2
TCBZX55C 6V8
TCBZX55C 7V5
TCBZX55C 8V2
TCBZX55C 9V1
TCBZX55C 10
TCBZX55C 11
TCBZX55C 12
TCBZX55C 13
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
85
85
85
85
85
85
75
60
35
25
10
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
100
100
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
7
7
50
50
70
70
90
110
6.2
6.8
7.5
8.2
9.1
10
10
15
20
20
26
9.4
10.6
11.6
12.7
14.1
10.4
11.4
12.4
Number: DB-034
June 2008 / F
Page 1
®
TAK CHEONG
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ @ IZT
ZZT @ IZT
(Ω)
Max
ZZK @ IZK
(Ω)
IR @ VR
(μA)
Max
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
(Volts)
Max
Min
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Max
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
80
TCBZX55C 15
TCBZX55C 16
TCBZX55C 18
TCBZX55C 20
TCBZX55C 22
TCBZX55C 24
TCBZX55C 27
TCBZX55C 30
TCBZX55C 33
TCBZX55C 36
TCBZX55C 39
TCBZX55C 43
TCBZX55C 47
TCBZX55C 51
TCBZX55C 56
TCBZX55C 62
TCBZX55C 68
TCBZX55C 75
5
5
30
40
1
1
1
1
1
1
1
1
1
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
5
50
5
55
5
55
5
80
5
80
5
80
5
80
5
80
1
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
90
90
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
110
125
135
150
160
170
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types
VZ @ IZT
(Volts)
Z
ZT @ IZT
(Ω)
Max
Z
ZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.33
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
Max
TCBZX55B 2V4
TCBZX55B 2V7
TCBZX55B 3V0
TCBZX55B 3V3
TCBZX55B 3V6
TCBZX55B 3V9
TCBZX55B 4V3
TCBZX55B 4V7
TCBZX55B 5V1
TCBZX55B 5V6
TCBZX55B 6V2
TCBZX55B 6V8
TCBZX55B 7V5
TCBZX55B 8V2
TCBZX55B 9V1
TCBZX55B 10
TCBZX55B 11
TCBZX55B 12
TCBZX55B 13
TCBZX55B 15
TCBZX55B 16
TCBZX55B 18
TCBZX55B 20
TCBZX55B 22
TCBZX55B 24
TCBZX55B 27
TCBZX55B 30
TCBZX55B 33
TCBZX55B 36
TCBZX55B 39
TCBZX55B 43
TCBZX55B 47
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.63
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
85
85
85
85
85
85
75
60
35
25
10
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
600
600
600
600
600
600
600
600
550
450
200
150
50
50
10
4
2
2
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
7
7
50
50
70
70
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
Number: DB-034
June 2008 / F
Page 2
®
TAK CHEONG
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ @ IZT
ZZT @ IZT
(Ω)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
IZT
IZK
(mA)
VR
(Volts)
Device Type
(Volts)
(mA)
Max
Min
Max
TCBZX55B 51
TCBZX55B 56
TCBZX55B 62
TCBZX55B 68
TCBZX55B 75
49.98
54.88
60.76
66.64
73.50
52.02
57.12
63.24
69.36
76.50
2.5
2.5
2.5
2.5
2.5
125
135
150
160
170
0.5
0.5
0.5
0.5
0.5
700
0.1
0.1
0.1
0.1
0.1
38
42
47
51
56
1000
1000
1000
1000
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown.
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA.
4. ZENER IMPEDANCE (ZZ) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (IZT) is superimposed to IZT
.
Number: DB-034
June 2008 / F
Page 3
®
TAK CHEONG
SEMICONDUCTOR
Typical Characteristics
1000
100
10
600
500
400
300
200
100
0
f = 1MHz
Ta = 25
℃
VR = 0V
VR = 2V
VR = 5V
VR = 20V
VR = 30V
1
0
20
40
60
80
0
40
80
120
160
200
Temperature [
]
VZ - Reverse Voltage [V]
℃
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
1000
100
10
1000
Iz=1mA
Ta = 25
℃
Ta = 25
℃
Iz=2mA
Iz=5mA
100
10
1
Iz=10mA
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1
10
100
VZ - Reverse Voltage [V]
VF - Forward Voltage [mV]
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
300
100
PD = 500mW
PD = 500mW
Ta = 25
250
200
150
100
50
Ta = 25
℃
℃
10
1
0.1
0.01
0
15
25
35
45
55
65
75
0
2
4
6
8
10
VZ - Reverse Voltage [V]
VZ - Reverse Voltage [V]
Figure 5. Reverse Current vs. Reverse Voltage
Figure 6. Reverse Current vs. Reverse Voltage
Number: DB-034
June 2008 / F
Page 4
®
TAK CHEONG
SEMICONDUCTOR
Package Outline
Package
Case Outline
DO-35
DO-35
DIM
Millimeters
Inches
Min
Max
Min
Max
A
B
C
D
0.46
3.05
0.55
5.08
0.018
0.120
1.000
0.060
0.022
0.200
1.500
0.090
25.40
1.53
38.10
2.28
Notes:
1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
Number: DB-034
June 2008 / F
Page 5
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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