TCBZX79C43RL [TAK_CHEONG]
Zener Diode,;
| 型号： | TCBZX79C43RL |
| 厂家： | 
Tak Cheong Electronics (Holdings) Co.,Ltd |
| 描述： | Zener Diode, 稳压器 |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
TAK CHEONG
SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter
Value
Units
DEVICE MARKING DIAGRAM
Power Dissipation
500
-65 to +175
+175
mW
°C
L
79T
xxx
Storage Temperature Range
Operating Junction Temperature
°C
L
: Logo
Device Code : TCBZX79Txxx
These ratings are limiting values above which the serviceability of the diode may be impaired.
T
: VZ tolerance B or C
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Cathode
Anode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ @ IZT
ZZT @ IZT
(Ω)
Max
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
(Volts)
Max
Min
1.88
2.08
2.28
2.51
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
Max
TCBZX79C 2V0
TCBZX79C 2V2
TCBZX79C 2V4
TCBZX79C 2V7
TCBZX79C 3V0
TCBZX79C 3V3
TCBZX79C 3V6
TCBZX79C 3V9
TCBZX79C 4V3
TCBZX79C 4V7
TCBZX79C 5V1
TCBZX79C 5V6
TCBZX79C 6V2
TCBZX79C 6V8
TCBZX79C 7V5
TCBZX79C 8V2
TCBZX79C 9V1
TCBZX79C 10
TCBZX79C 11
TCBZX79C 12
TCBZX79C 13
2.12
2.33
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
600
600
600
600
600
600
600
600
600
500
480
400
150
80
150
150
100
75
50
25
15
10
5
3
2
1
3
1
1
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
2
1
80
80
7.7
8.5
9.4
10.4
11.4
12.4
0.7
0.5
0.2
0.1
0.1
0.1
100
150
150
150
170
Number: DB-033
June 2008 / F
Page 1
®
TAK CHEONG
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ @ IZT
Z
ZT @ IZT
(Ω)
Max
Z
ZK @ IZK
(Ω)
IR @ VR
(μA)
Max
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
(Volts)
Max
Min
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Max
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
80
TCBZX79C 15
TCBZX79C 16
TCBZX79C 18
TCBZX79C 20
TCBZX79C 22
TCBZX79C 24
TCBZX79C 27
TCBZX79C 30
TCBZX79C 33
TCBZX79C 36
TCBZX79C 39
TCBZX79C 43
TCBZX79C 47
TCBZX79C 51
TCBZX79C 56
TCBZX79C 62
TCBZX79C 68
TCBZX79C 75
5
5
30
40
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
1000
1000
1000
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
5
45
5
55
5
55
5
70
2
80
2
80
2
80
2
90
2
2
2
2
130
150
170
180
200
215
240
255
2
2.5
2.5
2.5
VF Forward Voltage = 1.5 V Maximum @ IF = 100 mA for all types
VZ @ IZT
(Volts)
Z
ZT @ IZT
(Ω)
Max
Z
ZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
IZT
(mA)
IZK
(mA)
VR
(Volts)
Device Type
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.33
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
Max
TCBZX79B 2V4
TCBZX79B 2V7
TCBZX79B 3V0
TCBZX79B 3V3
TCBZX79B 3V6
TCBZX79B 3V9
TCBZX79B 4V3
TCBZX79B 4V7
TCBZX79B 5V1
TCBZX79B 5V6
TCBZX79B 6V2
TCBZX79B 6V8
TCBZX79B 7V5
TCBZX79B 8V2
TCBZX79B 9V1
TCBZX79B 10
TCBZX79B 11
TCBZX79B 12
TCBZX79B 13
TCBZX79B 15
TCBZX79B 16
TCBZX79B 18
TCBZX79B 20
TCBZX79B 22
TCBZX79B 24
TCBZX79B 27
TCBZX79B 30
TCBZX79B 33
TCBZX79B 36
TCBZX79B 39
TCBZX79B 43
TCBZX79B 47
TCBZX79B 51
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.63
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
600
600
600
600
600
600
600
500
480
400
150
80
100
75
50
25
15
10
5
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
Number: DB-033
June 2008 / F
Page 2
®
TAK CHEONG
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ @ IZT
Z
ZT @ IZT
(Ω)
Z
ZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
IZT
IZK
(mA)
VR
(Volts)
Device Type
(Volts)
(mA)
Max
Min
Max
TCBZX79B 56
TCBZX79B 62
TCBZX79B 68
TCBZX79B 75
54.88
60.76
66.64
73.50
57.12
63.24
69.36
76.50
2
200
215
240
255
0.5
0.5
0.5
0.5
425
430
447
470
0.05
0.05
0.05
0.05
39.2
43.4
47.6
52.5
2.5
2.5
2.5
VF Forward Voltage = 1.5 V Maximum @ IF = 100 mA for all types
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown.
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA.
4. ZENER IMPEDANCE (ZZ) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (IZT) is superimposed to IZT
.
Number: DB-033
June 2008 / F
Page 3
®
TAK CHEONG
SEMICONDUCTOR
Typical Characteristics
1000
100
10
600
500
400
300
200
100
0
f = 1MHz
Ta = 25
℃
VR = 0V
VR = 2V
VR = 5V
VR = 20V
VR = 30V
1
0
20
40
60
80
0
40
80
120
160
200
Temperature [
]
VZ - Reverse Voltage [V]
℃
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
1000
100
10
1000
Iz=1mA
Ta = 25
℃
Ta = 25
℃
Iz=2mA
Iz=5mA
100
10
1
Iz=10mA
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1
10
100
VZ - Reverse Voltage [V]
VF - Forward Voltage [mV]
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
300
100
PD = 500mW
PD = 500mW
Ta = 25
250
200
150
100
50
Ta = 25
℃
℃
10
1
0.1
0.01
0
15
25
35
45
55
65
75
0
2
4
6
8
10
VZ - Reverse Voltage [V]
VZ - Reverse Voltage [V]
Figure 5. Reverse Current vs. Reverse Voltage
Figure 6. Reverse Current vs. Reverse Voltage
Number: DB-033
June 2008 / F
Page 4
®
TAK CHEONG
SEMICONDUCTOR
Package Outline
Package
Case Outline
DO-35
DO-35
DIM
Millimeters
Inches
Min
Max
Min
Max
A
B
C
D
0.46
3.05
0.55
5.08
0.018
0.120
1.000
0.060
0.022
0.200
1.500
0.090
25.40
1.53
38.10
2.28
Notes:
1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
Number: DB-033
June 2008 / F
Page 5
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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