TCLZJ3V6B [TAK_CHEONG]
Zener Diode, 3.723V V(Z), 3.29%, 0.5W, Silicon, Unidirectional, DO-213AC, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL-34, MINIMELF-2;型号: | TCLZJ3V6B |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Zener Diode, 3.723V V(Z), 3.29%, 0.5W, Silicon, Unidirectional, DO-213AC, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL-34, MINIMELF-2 测试 二极管 |
文件: | 总6页 (文件大小:454K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
SEMICONDUCTOR
500 mW LL-34 Hermetically
Sealed Glass Zener Voltage
Regulators
SURFACE MOUNT
LL34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
DEVICE MARKING DIAGRAM
Parameter
Value
Units
Power Dissipation
500
-65 to +175
+175
mW
°C
Storage Temperature Range
Operating Junction Temperature
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Cathode Band Color : Blue
Specification Features:
.
.
.
.
.
.
.
.
.
Zener Voltage Range 2.0 to 39 Volts (Graded)
LL-34 (Mini-MELF) Package
Surface Device Type Mounting
Hermetically Sealed Glass
Cathode
Anode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable
RoHS Compliant
ELECTRICAL SYMBOL
Matte Tin (Sn) Terminal Finish
Color band Indicates Negative Polarity
Electrical Characteristics
TA = 25°C unless otherwise noted
Zzt@Izt
(Ohms)
Max
IR @VR
VZ@IZT
Izt
Device
Type
VZ
Zzk@Izk
(Ohms) Max
Izk
(uA)
(mA)
VR
(V)
(mA)
Tolerance
Min
Nom
Max
Max
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
B
C
1.880
2.020
2.120
2.220
2.330
2.430
2.540
2.690
2.850
3.010
3.160
3.320
3.455
3.600
3.740
3.890
4.040
4.170
4.300
4.44
1.990
2.110
2.210
2.315
2.425
2.530
2.645
2.800
2.960
3.115
3.270
3.425
3.575
3.723
3.875
4.025
4.165
4.300
4.435
4.56
2.100
2.200
2.300
2.410
2.520
2.630
2.750
2.910
3.070
3.220
3.380
3.530
3.695
3.845
4.010
4.160
4.290
4.430
4.570
4.68
TCLZJ2V0
TCLZJ2V2
TCLZJ2V4
TCLZJ2V7
TCLZJ3V0
TCLZJ3V3
TCLZJ3V6
TCLZJ3V9
5
5
5
5
5
5
5
5
100
100
100
110
120
120
100
100
1000
1000
1000
1000
1000
1000
1000
1000
0.5
0.5
0.5
0.5
0.5
0.5
1
120
100
120
100
50
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
20
10
1
5
TCLZJ4V3
TCLZJ4V7
5
5
100
80
1000
900
1
1
5
5
1.0
1.0
4.55
4.68
4.68
4.81
4.80
4.93
Number: DB-067
Jan.2011 / C
Page 1
®
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
Zzt@Izt
(Ohms)
Max
IR@VR
(uA)
Max
VZ@Izt
Izt
Device
Type
T
Zzk@Izk
(Ohms) Max
Izk
(mA)
VR
(V)
(mA)
Tolerance
Min
Nom
Max
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
10.18
10.50
10.82
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
4.94
5.07
5.23
5.41
5.59
5.76
5.94
6.12
6.28
6.46
6.66
6.84
7.04
7.26
7.48
7.73
7.99
8.24
8.51
8.79
9.07
9.36
9.66
9.95
10.19
10.45
10.78
11.10
11.42
11.74
12.05
12.43
12.88
13.33
13.79
14.26
14.72
15.19
15.65
16.10
16.64
17.26
17.88
18.49
19.11
19.73
20.22
21.68
21.18
21.63
22.08
22.62
23.19
23.72
24.24
24.89
25.62
26.29
26.97
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
TCLZJ5V1
TCLZJ5V6
TCLZJ6V2
TCLZJ6V8
TCLZJ7V5
TCLZJ8V2
TCLZJ9V1
5
5
5
5
5
5
5
80
60
60
20
20
20
25
800
500
300
150
120
120
120
1
5
5
1.5
2.5
3.0
3.5
4.0
5.0
6.0
1
1
5
0.5
0.5
0.5
0.5
2
0.5
0.5
0.5
8.45
8.73
9.01
9.30
9.59
9.90
TCLZJ10V
5
30
120
0.5
0.2
7.0
10.20
10.44
10.71
11.05
11.38
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.20
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
TCLZJ11V
TCLZJ12V
TCLZJ13V
TCLZJ15V
TCLZJ16V
TCLZJ18V
5
5
5
5
5
5
30
30
35
40
40
45
120
110
110
110
150
150
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
8.0
9.0
10
11
12
13
TCLZJ20V
TCLZJ22V
TCLZJ24V
TCLZJ27V
5
5
5
5
55
30
35
45
200
200
200
250
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
15
17
19
21
Number: DB-067
Jan.2011 / C
Page 2
®
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
Zzt@Izt
(Ohms)
Max
IR@VR
(uA)
Max
VZ@Izt
Izt
Device
Type
T
Zzk@Izk
(Ohms) Max
Izk
(mA)
VR
(V)
(mA)
Tolerance
Min
Nom
Max
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
27.69
28.42
29.09
29.77
30.45
31.10
31.70
32.30
32.97
33.64
34.27
34.89
35.58
36.28
36.93
37.58
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
TCLZJ30V
TCLZJ33V
TCLZJ36V
TCLZJ39V
5
5
5
5
55
65
75
85
250
250
250
250
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
23
25
27
30
VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA.
4. ZENER IMPEDANCE (ZZ) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (IZT) is superimposed to IZT
.
5. WHEN ORDERING, PLEASE SPECIFY TOLERANCE A, B. C OR D
Number: DB-067
Jan.2011 / C
Page 3
®
SEMICONDUCTOR
Typical Characteristics
600
500
400
300
200
100
0
1000
100
10
f = 1MHz
Ta = 25
℃
VR = 0V
VR = 2V
VR = 5V
VR = 20V
1
0
5
10
15
20
25
30
35
40
0
40
80
120
160
200
Temperature [
]
VZ - Reverse Voltage [V]
℃
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
1000
100
10
10000
Ta = 25
℃
Iz=1mA
Iz=2mA
Ta = 25
℃
Iz=5mA
Iz=10mA
100
1
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
VF - Forward Voltage [mV]
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
1000
PD = 500mW
Ta = 25
℃
10
0.1
0.001
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
Figure 5. Reverse Current vs. Reverse Voltage
Number: DB-067
Jan.2011 / C
Page 4
®
SEMICONDUCTOR
Package Outline
Package
Case Outline
B
LL-34
DIM
Millimeters
Inches
Min
Max
3.60
1.50
0.50
Min
Max
0.142
0.059
0.020
A
LL34
3.30
1.40
0.35
0.130
0.055
0.014
A
B
C
C
Notes:
1. All dimensions are within DO213AC JEDEC standard.
2. LL-34 polarity denoted by cathode band.
Number: DB-067
Jan.2011 / C
Page 5
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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