TCZX11VA.TR [TAK_CHEONG]
Zener Diode, 10.45V V(Z), 2.53%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2;型号: | TCZX11VA.TR |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Zener Diode, 10.45V V(Z), 2.53%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 稳压器 |
文件: | 总6页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TAK CHEONG ®
SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
DEVICE MARKING DIAGRAM
Parameter
Value
Units
Power Dissipation
500
-65 to +175
+175
mW
°C
L
ZXx
xxT
Storage Temperature Range
Operating Junction Temperature
°C
L
: Logo
: TCZXxxxT
These ratings are limiting values above which the serviceability of the diode may be impaired.
Device Code
VZ Tolerance (T) : A, B, C or D
Specification Features:
Zener Voltage Range 2.0 to 39 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Anode
Cathode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
TA = 25°C unless otherwise noted
Izt
Zzt@Izt
(Ohms)
Max
IR @VR
(uA)
Max
VZ@IZT
Device
Type
VZ
Zzk@Izk
(Ohms) Max
Izk
(mA)
VR
(V)
(mA)
Tolerance
Min
Nom
Max
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
B
C
A
B
C
1.880
2.020
2.120
2.220
2.330
2.430
2.540
2.690
2.850
3.010
3.160
3.320
3.455
3.600
3.740
3.890
4.040
4.170
4.300
4.44
1.990
2.110
2.210
2.315
2.425
2.530
2.645
2.800
2.960
3.115
3.270
3.425
3.575
3.723
3.875
4.025
4.165
4.300
4.435
4.56
2.100
2.200
2.300
2.410
2.520
2.630
2.750
2.910
3.070
3.220
3.380
3.530
3.695
3.845
4.010
4.160
4.290
4.430
4.570
4.68
TCZX2V0
TCZX2V2
TCZX2V4
TCZX2V7
TCZX3V0
TCZX3V3
TCZX3V6
TCZX3V9
5
5
5
5
5
5
5
5
100
100
100
110
120
120
100
100
1000
1000
1000
1000
1000
1000
1000
1000
0.5
0.5
0.5
0.5
0.5
0.5
1
120
100
120
100
50
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
20
10
1
5
TCZX4V3
TCZX4V7
TCZX5V1
5
5
5
100
80
1000
900
1
1
1
5
5
5
1.0
1.0
1.5
4.55
4.68
4.81
4.94
4.68
4.81
4.94
5.07
4.80
4.93
5.07
5.20
80
800
5.09
5.23
5.37
Number: DB-043
July 2008 / C
Page 1
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics
TA = 25°C unless otherwise noted
Izt
Zzt@Izt
(Ohms)
Max
IR@VR
(uA)
Max
VZ@Izt
Device
Type
T
Zzk@Izk
(Ohms) Max
Izk
(mA)
VR
(V)
(mA)
Tolerance
Min
Nom
Max
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
5.41
5.59
5.76
5.94
6.12
6.28
6.46
6.66
6.84
7.04
7.26
7.48
7.73
7.99
8.24
8.51
8.79
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
TCZX5V6
TCZX6V2
TCZX6V8
TCZX7V5
TCZX8V2
TCZX9V1
5
5
5
5
5
5
60
60
20
20
20
25
500
300
150
120
120
120
1
5
5
2.5
3.0
3.5
4.0
5.0
6.0
1
0.5
0.5
0.5
0.5
2
0.5
0.5
0.5
8.83
9.12
9.41
9.70
9.07
9.36
9.66
9.95
9.30
9.59
9.90
TCZX10V
5
30
120
0.5
0.2
7.0
10.20
10.44
10.71
11.05
11.38
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.20
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
9.94
10.19
10.45
10.78
11.10
11.42
11.74
12.05
12.43
12.88
13.33
13.79
14.26
14.72
15.19
15.65
16.10
16.64
17.26
17.88
18.49
19.11
19.73
20.22
21.68
21.18
21.63
22.08
22.62
23.19
23.72
24.24
24.89
25.62
26.29
26.97
27.69
28.42
29.09
29.77
10.18
10.50
10.82
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
TCZX11V
TCZX12V
TCZX13V
TCZX15V
TCZX16V
TCZX18V
5
5
5
5
5
5
30
30
35
40
40
45
120
110
110
110
150
150
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
8.0
9.0
10
11
12
13
TCZX20V
TCZX22V
TCZX24V
TCZX27V
TCZX30V
5
5
5
5
5
55
30
35
45
55
200
200
200
250
250
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
15
17
19
21
23
Number: DB-043
July 2008 / C
Page 2
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics TA = 25°C unless otherwise noted
Izt
Zzt@Izt
(Ohms)
Max
IR@VR
(uA)
Max
VZ@Izt
T
Zzk@Izk
(Ohms) Max
Izk
(mA)
VR
(V)
Device Type
(mA)
Tolerance
Min
Nom
Max
A
B
C
D
A
B
C
D
A
B
C
D
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
30.45
31.10
31.70
32.30
32.97
33.64
34.27
34.89
35.58
36.28
36.93
37.58
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
TCZX33V
TCZX36V
TCZX39V
5
65
75
85
250
250
250
0.5
0.5
0.5
0.2
0.2
0.2
25
27
30
5
5
VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA.
4. ZENER IMPEDANCE (ZZ) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (IZT) is superimposed to IZT
.
5. WHEN ORDERING, PLEASE SPECIFY TOLERANCE A, B. C OR D
Number: DB-043
July 2008 / C
Page 3
TAK CHEONG ®
SEMICONDUCTOR
Typical Characteristics
600
500
400
300
200
100
0
1000
100
10
f = 1MHz
Ta = 25
℃
VR = 0V
VR = 2V
VR = 5V
VR = 20V
1
0
5
10
15
20
25
30
35
40
0
40
80
120
160
200
Temperature [
]
VZ - Reverse Voltage [V]
℃
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
1000
100
10
10000
Ta = 25
℃
Iz=1mA
Iz=2mA
Ta = 25
℃
Iz=5mA
Iz=10mA
100
1
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
VF - Forward Voltage [mV]
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
1000
PD = 500mW
Ta = 25
℃
10
0.1
0.001
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
Figure 5. Reverse Current vs. Reverse Voltage
Number: DB-043
July 2008 / C
Page 4
TAK CHEONG ®
SEMICONDUCTOR
Package Outline
Package
Case Outline
DO-35
DO-35
DIM
Millimeters
Inches
Min
Max
Min
Max
A
B
C
D
0.46
3.05
0.55
5.08
0.018
0.120
1.000
0.060
0.022
0.200
1.500
0.090
25.40
1.53
38.10
2.28
Notes:
1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
Number: DB-043
July 2008 / C
Page 5
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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