TCZX2V4B.TR [TAK_CHEONG]

Zener Diode, 2.53V V(Z), 3.95%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2;
TCZX2V4B.TR
型号: TCZX2V4B.TR
厂家: Tak Cheong Electronics (Holdings) Co.,Ltd    Tak Cheong Electronics (Holdings) Co.,Ltd
描述:

Zener Diode, 2.53V V(Z), 3.95%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

测试 二极管
文件: 总7页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
TAK CHEONG  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
DEVICE MARKING DIAGRAM  
Parameter  
Value  
Units  
L
ZXx  
xxT  
Power Dissipation  
500  
-65 to +200  
+200  
mW  
°C  
Storage Temperature Range  
Operating Junction Temperature  
°C  
L
: Logo  
: TCZXxxxT  
VZ Tolerance (T) : A, B, C or D  
Lead Temperature (1/16” from case for 10 seconds)  
+230  
°C  
Device Code  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Zener Voltage Range 2.0 to 39 Volts  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All external surfaces are corrosion resistant and leads are readily solderable  
Cathode indicated by polarity band  
ELECTRICAL SYMBOL  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Izt  
Zzt@Izt  
(Ohms)  
Max  
IR @VR  
(uA)  
Max  
VZ@IZT  
Device  
Type  
VZ  
Zzk@Izk  
(Ohms) Max  
Izk  
(mA)  
VR  
(V)  
(mA)  
Tolerance  
Min  
Nom  
Max  
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
B
C
A
B
C
1.880  
2.020  
2.120  
2.220  
2.330  
2.430  
2.540  
2.690  
2.850  
3.010  
3.160  
3.320  
3.455  
3.600  
3.740  
3.890  
4.040  
4.170  
4.300  
4.44  
1.990  
2.110  
2.210  
2.315  
2.425  
2.530  
2.645  
2.800  
2.960  
3.115  
3.270  
3.425  
3.575  
3.723  
3.875  
4.025  
4.165  
4.300  
4.435  
4.56  
2.100  
2.200  
2.300  
2.410  
2.520  
2.630  
2.750  
2.910  
3.070  
3.220  
3.380  
3.530  
3.695  
3.845  
4.010  
4.160  
4.290  
4.430  
4.570  
4.68  
TCZX2V0  
TCZX2V2  
TCZX2V4  
TCZX2V7  
TCZX3V0  
TCZX3V3  
TCZX3V6  
TCZX3V9  
5
5
5
5
5
5
5
5
100  
100  
100  
110  
120  
120  
100  
100  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
1
120  
100  
120  
100  
50  
0.5  
0.7  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
20  
10  
1
5
TCZX4V3  
TCZX4V7  
TCZX5V1  
5
5
5
100  
80  
1000  
900  
1
1
1
5
5
5
1.0  
1.0  
1.5  
4.55  
4.68  
4.81  
4.94  
4.68  
4.81  
4.94  
5.07  
4.80  
4.93  
5.07  
5.20  
80  
800  
5.09  
5.23  
5.37  
November 2005 / A  
Page 1  
®
TAK CHEONG  
SEMICONDUCTOR  
Electrical Characteristics TA = 25°C unless otherwise noted  
Izt  
Zzt@Izt  
(Ohms)  
Max  
IR@VR  
(uA)  
Max  
VZ@Izt  
T
Zzk@Izk  
(Ohms) Max  
Izk  
(mA)  
VR  
(V)  
Device Type  
(mA)  
5
Tolerance  
Min  
Nom  
Max  
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
5.28  
5.45  
5.61  
5.78  
5.96  
6.12  
6.29  
6.49  
6.66  
6.85  
7.07  
7.29  
7.53  
7.78  
8.03  
8.29  
8.57  
5.41  
5.59  
5.76  
5.94  
6.12  
6.28  
6.46  
6.66  
6.84  
7.04  
7.26  
7.48  
7.73  
7.99  
8.24  
8.51  
8.79  
5.55  
5.73  
5.91  
6.09  
6.27  
6.44  
6.63  
6.83  
7.01  
7.22  
7.45  
7.67  
7.92  
8.19  
8.45  
8.73  
9.01  
TCZX5V6  
TCZX6V2  
TCZX6V8  
TCZX7V5  
TCZX8V2  
TCZX9V1  
60  
60  
20  
20  
20  
25  
500  
300  
150  
120  
120  
120  
1
5
5
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
5
5
5
5
5
1
0.5  
0.5  
0.5  
0.5  
2
0.5  
0.5  
0.5  
8.83  
9.12  
9.41  
9.70  
9.07  
9.36  
9.66  
9.95  
9.30  
9.59  
9.90  
TCZX10V  
5
30  
120  
0.5  
0.2  
7.0  
10.20  
10.44  
10.71  
11.05  
11.38  
11.71  
12.03  
12.35  
12.75  
13.21  
13.66  
14.13  
14.62  
15.09  
15.57  
16.04  
16.51  
17.06  
17.70  
18.33  
18.96  
19.59  
20.22  
20.72  
21.20  
21.71  
22.17  
22.63  
23.18  
23.77  
24.31  
24.85  
25.52  
26.26  
26.95  
27.64  
28.39  
29.13  
29.82  
30.51  
9.94  
10.19  
10.45  
10.78  
11.10  
11.42  
11.74  
12.05  
12.43  
12.88  
13.33  
13.79  
14.26  
14.72  
15.19  
15.65  
16.10  
16.64  
17.26  
17.88  
18.49  
19.11  
19.73  
20.22  
21.68  
21.18  
21.63  
22.08  
22.62  
23.19  
23.72  
24.24  
24.89  
25.62  
26.29  
26.97  
27.69  
28.42  
29.09  
29.77  
10.18  
10.50  
10.82  
11.13  
11.44  
11.74  
12.11  
12.55  
12.99  
13.44  
13.89  
14.35  
14.80  
15.25  
15.69  
16.22  
16.82  
17.42  
18.02  
18.63  
19.23  
19.72  
20.15  
20.64  
21.08  
21.52  
22.05  
22.61  
23.12  
23.63  
24.26  
24.97  
25.63  
26.29  
26.99  
27.70  
28.36  
29.02  
TCZX11V  
TCZX12V  
TCZX13V  
TCZX15V  
TCZX16V  
TCZX18V  
5
5
5
5
5
5
30  
30  
35  
40  
40  
45  
120  
110  
110  
110  
150  
150  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
8.0  
9.0  
10  
11  
12  
13  
TCZX20V  
TCZX22V  
TCZX24V  
TCZX27V  
TCZX30V  
5
5
5
5
5
55  
30  
35  
45  
55  
200  
200  
200  
250  
250  
0.5  
0.5  
0.5  
0.5  
0.5  
0.2  
0.2  
0.2  
0.2  
0.2  
15  
17  
19  
21  
23  
November 2005 / A  
Page 2  
®
TAK CHEONG  
SEMICONDUCTOR  
Electrical Characteristics TA = 25°C unless otherwise noted  
Izt  
Zzt@Izt  
(Ohms)  
Max  
IR@VR  
(uA)  
Max  
VZ@Izt  
T
Zzk@Izk  
(Ohms) Max  
Izk  
(mA)  
VR  
(V)  
Device Type  
(mA)  
Tolerance  
Min  
Nom  
Max  
A
B
C
D
A
B
C
D
A
B
C
D
29.68  
30.32  
30.90  
31.49  
32.14  
32.79  
33.40  
34.01  
34.68  
35.36  
36.00  
36.63  
30.45  
31.10  
31.70  
32.30  
32.97  
33.64  
34.27  
34.89  
35.58  
36.28  
36.93  
37.58  
31.22  
31.88  
32.50  
33.11  
33.79  
34.49  
35.13  
35.77  
36.47  
37.19  
37.85  
38.52  
TCZX33V  
TCZX36V  
TCZX39V  
5
65  
75  
85  
250  
250  
250  
0.5  
0.5  
0.5  
0.2  
0.2  
0.2  
25  
27  
30  
5
5
VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types  
Note:  
1. The zener voltage subdivision (VZ) is measured 40mS after diode is powered up.  
2. The operating resistance (Zzt and Zzk) is measured by superimposing a minute alternation current in the regulated  
current (Iz).  
3. When ordering, please specify tolerance A, B, C or D.  
Electrical Symbol Definition  
Typical Characteristics  
I
Symbol  
Parameter  
(mA)  
VZ  
IZT  
ZZT  
IZK  
ZZK  
IR  
Reverse Zener Voltage @ IZT  
Reverse Current  
IF  
Maximum Zener Impedance @ IZT  
Reverse Current  
(mV)  
V
Z VR  
Maximum Zener Impedance @ IZK  
Reverse Leakage Current @ VR  
Breakdown Voltage  
V
IR  
IZT  
VF  
(V)  
VR  
IF  
Forward Current  
VF  
Forward Voltage @ IF  
(nA)  
(mA)  
Ordering Information  
Device  
TCZXxxx  
Package  
Bulk  
Quantity  
10,000  
5,000  
Tape and Ammo (52mm)  
Tape and Reel  
TCZXxxx.TB  
TCZXxxx.TR  
TCZXxxx.T26B  
TCZXxxx  
10,000  
5,000  
Tape and Ammo (26mm)  
Others (…contact Tak Cheong sales representatives)  
Axial-Lead Tape Packaging Standards  
This axial-lead component’s packaging requirements use in automatic testing and assembly equipment. And this standard practices for  
lead-tape packaging of axial-lead components meets the requirements of EIA Standard RS-296-D “Lead-taping of Components on Axial  
Lead Configuration for Automatic Insertion”.  
November 2005 / A  
Page 3  
®
TAK CHEONG  
SEMICONDUCTOR  
Tape & Reel Packaging Information  
Tape & Reel  
Outline  
DIM  
D1  
Millimeters  
356  
30  
D2  
Reel Dimensions  
D3  
84  
W1  
77.5  
PKG Type  
DO-35  
Quantity Per Reel  
Quantity Per Reel  
10,000  
November 2005 / A  
Page 4  
®
TAK CHEONG  
SEMICONDUCTOR  
Tape & Ammo Packaging Information  
Tape & Ammo  
Outline  
250mm x 80mm x 80mm  
PKG Type  
DO-35  
Quantity Per Box  
Quantity Per Ammo  
Box  
5,000  
Taping Dimensions  
Description  
Standard Width  
Millimeters  
26  
52  
Tape Spacing (B)  
Component Pitch (C)  
Untaped Lead (L1 – L2)  
Glass Offset (F)  
52 ± 0.69  
26 +0.5 / -0  
5.08 ± 0.4  
± 0.69  
5.08 ± 0.4  
± 0.69  
± 0.69  
± 0.69  
Bent (D)  
1.2 Max  
6.138 ± 0.576  
0.55 Max  
3.2 Min  
0
1.2 Max  
6.138 ± 0.576  
0.55 Max  
3.2 Min  
0
Tape Width (G)  
Tape Mismatch (E)  
Taped Lead (G)  
Lead Beyond Tape (H)  
November 2005 / A  
Page 5  
®
TAK CHEONG  
SEMICONDUCTOR  
Bulk Packaging Information  
190mm x 150mm x 65mm  
Quantity Per Plastic Bag  
DO-35  
500 x 20 Plastic Bag  
Bulk Outline  
Plastic Bag  
PKG Type  
DO-35  
Quantity Per Box  
Quantity Per Box  
10,000  
November 2005 / A  
Page 6  
®
TAK CHEONG  
SEMICONDUCTOR  
Package Outline  
Package  
Case Outline  
DO-35  
DO-35  
DIM  
Millimeters  
Inches  
Min  
Max  
Min  
Max  
0.46  
3.05  
0.55  
5.08  
0.018  
0.120  
1.000  
0.060  
0.022  
0.200  
1.500  
0.090  
A
B
C
D
25.40  
1.53  
38.10  
2.28  
Notes:  
1. All dimensions are within JEDEC standard.  
2. DO35 polarity denoted by cathode band.  
November 2005 / A  
Page 7  

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