TFP7N65 [TAK_CHEONG]
N-Channel Power MOSFET 7.2A, 650V, 1.5Ω; N沟道功率MOSFET 7.2A ， 650V ， 1.5Ω
| 型号： | TFP7N65 |
| 厂家： | 
Tak Cheong Electronics (Holdings) Co.,Ltd |
| 描述： | N-Channel Power MOSFET 7.2A, 650V, 1.5Ω |
| 文件： | 总8页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
7.2A, 650V, 1.5Ω
1 = Gate
2 = Drain
3 = Source
General Description
1
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
2
3
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
Features
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
Drain- Source Voltage
Value
650
±30
7.2
Units
V
V
V
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
A
D
I
Drain Current Pulsed
28.8
137
1.1
A
DM
Power Dissipation
(Note 2)
W
P
D
Derating factor above 25℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Operating Junction Temperature
Storage Temperature Range
W/℃
mJ
mJ
℃
E
E
(Note 1)
(Note 2)
274
13.7
150
AS
AR
T
J
T
- 55 to +150
℃
stg
Notes:
1. L=9mH, I =7.2A, V =50V, R =50Ω, Starting T =25℃
AS
DD
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.91
Unit
℃/W
℃/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
R
θJC
62.5
θJA
Number: DB-187
March 2010, Revision B
Page 1
®
TAK CHEONG
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Off Characteristics (TA = 25°C unless otherwise noted)
Symbol
BVDSS
IDSS
Parameter
Test Conditions
VGS = 0V, ID = 250uA
VDS = 650V, VGS = 0V
Min.
650
--
Typ.
--
Max.
--
Unit
V
Drain-Sounce Breakdown Voltage
Zero Gate Voltage Drain Current
--
10
uA
nA
nA
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
--
100
-100
IGSSR
--
--
On Characteristics (TA = 25°C unless otherwise noted)
Symbol
VGS (th)
Parameter
Gate Threshold Voltage
On-Resistance
Test Conditions
VDS = VGS , ID = 250uA
VGS = 10V, ID = 3.6A
Min.
2.0
--
Typ.
--
Max.
4.0
Unit
V
RDS(ON)
0.9
1.5
Ω
Dynamic Characteristics
Symbol
Ciss
Parameter
Test Conditions
Min.
--
Typ.
1150
110
30
Max.
1490
145
39
Unit
pF
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Coss
Crss
Output Capacitance
--
pF
Reverse Transfer Capacitance
--
pF
Switching Characteristics
Symbol
td(on)
tr
Parameter
Test Conditions
Min.
--
Typ.
24
Max.
58
Unit
nS
nS
nS
nS
nC
nC
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 325V, ID = 7.2A,
RG = 25Ω
--
60
130
210
138
46
--
100
64
td(off)
tr
(Note 3 & 4)
--
--
35
Qg
V
DS = 520V, ID = 7.2A,
VGS = 10V
--
5.5
15
--
Qgs
Qgd
(Note 3 & 4)
--
--
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
Parameter
Test Conditions
Min.
--
Typ,
--
Max.
7.2
Unit
A
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
28.8
1.5
A
ISM
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 7.2A
VGS = 0V, IS = 7.2A,
dIF / dt = 100A/uS
(Note 3)
--
--
V
VSD
--
--
500
2.8
--
--
nS
uC
Trr
Reverse Recovery Charge
Qrr
Notes:
3. Pulse Test: Pulse width
4. Basically not affected by working temperature.
<
300us, Duty cycle ≤ 2%.
Number: DB-187
March 2010, Revision B
Page 2
®
TAK CHEONG
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Number: DB-187
March 2010, Revision B
Page 3
®
TAK CHEONG
SEMICONDUCTOR
Number: DB-187
March 2010, Revision B
Page 4
®
TAK CHEONG
SEMICONDUCTOR
Number: DB-187
March 2010, Revision B
Page 5
®
TAK CHEONG
SEMICONDUCTOR
Number: DB-187
March 2010, Revision B
Page 6
®
TAK CHEONG
SEMICONDUCTOR
TO220AB PACKAGE OUTLINE
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
A1
A2
b
3.60
1.20
2.03
0.40
1.20
0.36
14.22
2.34
9.70
5.84
12.70
2.70
3.50
2.54
4.80
1.40
2.90
1.00
1.78
0.60
16.50
2.74
10.60
6.85
14.70
3.30
4.00
3.40
0.142
0.047
0.080
0.016
0.047
0.014
0.560
0.092
0.382
0.230
0.500
0.106
0.138
0.100
0.189
0.055
0.114
0.039
0.070
0.024
0.650
0.108
0.417
0.270
0.579
0.130
0.157
0.134
b2
c
D
e
E
H1
L
L1
ØP
Q
NOTE: Above package outline conforms to JEDEC TO-220AB
Number: DB-187
March 2010, Revision B
Page 7
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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