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GWLA.10 [TAOGLAS]

Multi-Band Application;

GWLA.10


元器件型号：	GWLA.10
生产厂家：	Taoglas antenna solutions
描述和应用：	Multi-Band Application
PDF文件：	总24页 (文件大小：1447K)
下载文档：	下载PDF数据表文档文件
型号参数：GWLA.10参数

GWLA01

GPS L1/GALILEO & Bluetooth/Wi-Fi 2.4GHz

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0 TAOGLAS

GWLA10

GPS/GALILEO & Dual-Band Wi-Fi Ceramic Loop Antenna

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0 TAOGLAS

GWM100-0085X1

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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13 IXYS

GWM100-0085X1-SMD

Power Field-Effect Transistor, 103A I(D), 85V, 0.0062ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 17 PIN

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0 IXYS

GWM100-01X1

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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28 IXYS

GWM100-01X1-SL

Power Field-Effect Transistor, 90A I(D), 100V, 0.0085ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SL, 17 PIN

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0 IXYS

GWM100-01X1-SLSAM

MOSFET 6N-CH 100V 90A ISOPLUS

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0 IXYS

GWM100-01X1-SMD

Power Field-Effect Transistor, 90A I(D), 100V, 0.0085ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 17 PIN

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0 IXYS

GWM100-01X1-SMDSAM

MOSFET 6N-CH 100V 90A ISOPLUS

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0 IXYS

GWM120-0075P3

Three phase full bridge with Trench MOSFETs in DCB isolated high current package

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49 IXYS

GWM120-0075P3-BL

Power Field-Effect Transistor, 118A I(D), 75V, 0.0055ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IXYS

GWM120-0075X1

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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17 IXYS

GWM120-0075X1-BL

Power Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 LITTELFUSE

GWM120-0075X1-SL

Power Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IXYS

GWM120-0075X1-SL

Power Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IXYS

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