BYG22B [TAYCHIPST]
Super Fast Silicon Mesa SMD Rectifier; 超快速硅梅萨贴片整流
| 型号： | BYG22B |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | Super Fast Silicon Mesa SMD Rectifier |
| 文件： | 总2页 (文件大小：3891K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYG22A THRU BYG22D
50V-200V
2.0A
Super Fast Silicon Mesa SMD Rectifier
FEATURES
Controlled avalanche characteristic
Glass passivated junction
Low reverse current
Low forward voltage
Soft recovery characteristic
Very fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
50
100
200
35
Unit
V
V
V
A
BYG22A
BYG22B
BYG22D
V =V
R
RRM
RRM
RRM
V =V
R
V =V
R
Peak forward surge current
Average forward current
Junction and storage
temperature range
t =10ms,
half sinewave
I
p
FSM
I
2
A
C
FAV
T =T
–55...+150
j
stg
Pulse energy in avalanche mode,
non repetitive
I
=1A, T =25 C
E
R
20
mJ
(BR)R
j
(inductive load switch off)
Maximum Thermal Resistance
Parameter
Junction lead
Junction ambient mounted on epoxy–glass hard tissue
Test Conditions
Symbol Value
Unit
K/W
K/W
K/W
K/W
T =const.
R
25
L
thJL
thJA
thJA
thJA
R
R
R
150
125
100
2
mounted on epoxy–glass hard tissue, 50mm 35 m Cu
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu
2
3
Electrical Characteristics
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
I =1A
V
V
1
1.1
1
10
25
V
V
A
A
ns
F
F
F
I =2A
F
Reverse current
V =V
V =V
R
I
I
R
RRM
RRM
R
, T =100 C
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A
t
rr
F
R
R
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
1 of 2
BYG22A THRU BYG22D
50V-200V
2.0A
Super Fast Silicon Mesa SMD Rectifier
RATINGS AND CHARACTERISTIC CURVES
BYG22A THRU BYG22D
100
100
10
1
10
1
T =125°C
j
75°C
V =V
R
25°C
R RM
0.1
0.1
0.01
0.01
200
3.0
0
40
80
120
160
0
0.6
V
1.2
– Forward Voltage ( V )
F
1.8
2.4
94 9347
T – Junction Temperature ( °C )
j
94 9352
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 3. Max. Forward Current vs. Forward Voltage
140
T
=125°C
amb
2.0
1.6
120
100
80
60
40
20
0
100°C
R
thJA
=25K/W
75°C
50°C
1.2
0.8
0.4
0
100K/W
125K/W
25°C
150K/W
I =0.5A, i =0.125A
R
R
200
1.0
0
40
80
120
160
0
0.2
0.4
I – Forward Current ( A )
F
0.6
0.8
94 9351
T
amb
– Ambient Temperature ( °C )
94 9353
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Max. Reverse Recovery Time vs.
Forward Current
1000
125K/W DC
t /T=0.5
100
10
1
p
t /T=0.2
p
t /T=0.1
p
t /T=0.05
p
t /T=0.02
p
Single Pulse
t /T=0.01
p
–5
–4
–3
–2
–1
0
1
2
10
10
10
10
10
10
10
10
94 9339
t – Pulse Length ( s )
p
Figure 6. Thermal Response
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
2 of 2
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