BYS11-90 [TAYCHIPST]
Schottky Barrier Rectifier; 肖特基势垒整流器
| 型号： | BYS11-90 |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | Schottky Barrier Rectifier |
| 文件： | 总2页 (文件大小：4824K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYS11-90
90V
1.5A
Schottky Barrier Rectifier
FEATURES
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage=
Repetitive peak reverse voltage
Test Conditions
Type
Symbol
V =
Value
Unit
V
R
90
V
RRM
Peak forward surge current
Average forward current
t =10ms, half sinewave
p
I
I
30
1.5
A
A
FSM
FAV
Junction and storage
temperature range
T =T
–55...+150
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction lead
Test Conditions
mounted on epoxy–glass hard tissue
Symbol
Value
25
150
125
100
Unit
K/W
T =constant
L
R
thJL
2
Junction ambient mounted on epoxy–glass hard tissue, 50mm 35 m Cu
R
thJA
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu
2
3
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Type Max Unit
Forward voltage
I =1A
V
750
100
1
mV
A
mA
F
F
V =V
R
RRM
Reverse current
I
R
V =V
, T =100 C
R
RRM
j
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
1 of 2
BYS11-90
90V
1.5A
Schottky Barrier Rectifier
RATINGS AND CHARACTERISTIC CURVES
BYS11-90
2.0
1.6
1.2
2.0
V =0V, Half Sinewave
R
R
thJA
=25K/W
1.6
R
thJA
=25K/W
1.2
0.8
0.4
0
R
=100K/W
thJA
100K/W
0.8
0.4
0
125K/W
40
V =V
150K/W
80
R
R RM
200
200
0
40
80
120
160
0
120
160
95 9715
T – Junction Temperature ( °C )
j
95 9718
T
amb
– Ambient Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
1000
10.000
V =V
R
T =150°C
j
R RM
100
10
1
1.000
0.100
0.010
0.001
T =25°C
j
0.1
200
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
– Forward Voltage ( V )
0
40
80
120
160
16469
V
F
95 9716
T – Junction Temperature ( °C )
j
Figure 2. Max. Reverse Current vs. Junction Temperature
Figure 5. Forward Current vs. Forward Voltage
180
2.0
f=1MHz
160
V =V
R
, Half Sinewave, R
R RM
=25K/W
thJA
140
120
100
80
1.6
1.2
0.8
0.4
0
60
40
20
0
200
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
0
40
80
120
160
16470
95 9717
T
amb
– Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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