ES2H [TAYCHIPST]
SURFACE MOUNT SUPER FAST RECTIFIERS; 表面装载超快速整流器
| 型号： | ES2H |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | SURFACE MOUNT SUPER FAST RECTIFIERS |
| 文件： | 总2页 (文件大小：1399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES2A THRU ES2J
50V-600V 2.0A
SURFACE MOUNT SUPER FAST RECTIFIERS
Features
•
For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for
high efficiency.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TA = 110°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
2.0
A
if(surge)
50
A
PD
1.66
13.3
W
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient**
75
RθJA
RθJL
Tstg
TJ
°C/W
Thermal Resistance, Junction to Lead**
Storage Temperature Range
20
°C/W
°C
-50 to +150
-50 to +150
Operating Junction Temperature
°
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
2A
50
35
50
2B
100
70
2C
150
105
150
2D
200
140
200
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
100
DC Reverse Voltage
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 100°C
(Rated VR)
10
350
µA
µA
nS
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 2.0 A
20
0.90
18
V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
pF
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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ES2A THRU ES2J
50V-600V 2.0A
SURFACE MOUNT SUPER FAST RECTIFIERS
10
0.75
2.0
Tj = 25°C
Pulse width = 300µs
1.6
1.0
1.2
0.8
0.4
0.1
0
0.01
25
50
75
100
125
150
175
0
0.4
0.8
1.2
1.6
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
60
50
40
30
20
Single Half-Sine-Wave
(JEDEC Method)
Tj = 125°C
100
10
Tj = 25°C
1.0
0.1
10
0
0
40
80
120
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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