TPA200 [TAYCHIPST]
TELECOMMUNICATION PROTECTION ARRESTORS; 电信保护避雷器
| 型号： | TPA200 |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | TELECOMMUNICATION PROTECTION ARRESTORS |
| 文件： | 总2页 (文件大小：1703K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPA SERIERS
TELECOMMUNICATION PROTECTION ARRESTORS
Features
■ Bidirectional crowbar protection
■ Voltage range from 62 V to 320 V
■ Low capacitance from 12 pF to 20 pF @ 50 V
■ Low leakage current : I = 2 µA max
R
■ Holding current: I = 150 mA min
H
■ Repetitive peak pulse current :
I
= 50 A (10/1000 µs)
PP
Main applications
Telecommunication equipment such as:
■ Analog and digital line cards (xDSL, T1/E1,
ISDN, ...)
■ Terminals (phone, fax, modem, ...) and central
office equipment
Description
These Trisil series have been designed to protect
telecommunication equipment against lightning
and transient induced by AC power lines.
They are available in SMB and DO-15
packages.
Benefits
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet various
standards such as UL1950, IEC950 / CSA C22.2,
UL1459 and FCC part 68.
Trisils have UL94 V0 approved resin.
Type
VPP
A
VRM@IRM
VBR@IR
VBO
V
IBO
IHMIN
mA
150
150
150
150
150
150
150
150
C#
pF
Package
封装形式
SMB/SMB(G)
SMB/SMB(G)
SMB/SMB(G)
SMB/SMB(G)
DO-15
型号
V
μA
V
mA
mA
800
800
800
800
800
800
800
800
STPA180
STPA200
STPA220
STPA240
TPA180
TPA200
TPA220
TPA240
50
50
50
50
50
50
50
50
162 2.0 180 1.0
180 2.0 200 1.0
198 2.0 220 1.0
216 2.0 240 1.0
162 2.0 180 1.0
180 2.0 200 1.0
198 2.0 220 1.0
216 2.0 240 1.0
240
267
293
320
240
267
293
320
100
100
100
100
100
100
100
100
DO-15
DO-15
DO-15
SMB
DO-15
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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TPA SERIES
TELECOMMUNICATION PROTECTION ARRESTORS
Figure 2: Pulse waveform (10/1000µs)
Figure 3: Non repetitive surge peak on-state
current versus overload duration
I
(A)
TSM
Repetitive peak pulse current
% I
30
25
20
15
10
5
PP
tr = rise time (µs)
tp = pulse duration time (µs)
F=50Hz
100
50
0
t(s)
t
0
t
t
p
r
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Figure 4: On-state voltage versus on-state
current (typical values)
Figure 5: Relative variation of holding current
versus junction temperature
I [T ] / I [T =25°C]
I (A)
T
H
j
H
j
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
Tj=25°C
20
10
5
2
1
T (°C)
j
V (V)
T
0
1
2
3
4
5
6
7
8
9
10
-40
-20
0
20
40
60
80
100
120
Figure 6: Relative variation of breakover
voltage versus junction temperature
Figure 7: Relative variation of leakage current
versus reverse voltage applied (typical values)
V
[T ] / V [T =25°C]
j BO j
BO
I
[T ] / I [T =25°C]
RM
j
RM
j
1.10
1.05
1.00
0.95
0.90
2000
1000
V
R
=V
RM
100
10
270 V
62 V
T (°C)
j
T (°C)
j
1
25
50
75
100
125
-40
-20
0
20
40
60
80
100
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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